2SK3520-01MR
2SK3520-01MR
FUJI POWER MOSFET
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
Typical Gate Charge Characteristics
VGS=f(Qg):ID=8A, Tch=25°C
50
45
40
35
30
25
20
15
10
5
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20V
10V
8V
Vcc= 100V
250V
max.
typ.
400V
7.5V
min.
7.0V
6
6
4
4
VGS=6.5V
2
2
0
0
0
0
25
50
75
100
125
150
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
VDS [V]
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Tch [°C]
Tc [°C]
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transconductance
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
10n
1n
100
10
1
100
10
1
Ciss
10
100p
10p
1p
Coss
Crss
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
0.1
1
10
10-1
100
101
102
103
9
10
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VGS[V]
VDS [V]
VSD [V]
ID [A]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=8A
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
300
VGS=6.5V 7.0V
7.5V
2.0
1.5
1.0
0.5
0.0
250
200
150
100
50
102
101
100
tr
8V
10V
20V
td(off)
td(on)
max.
tf
typ.
0
100
101
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ID [A]
Tch [°C]
starting Tch [°C]
ID [A]
2
