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2SK3574-ZK

型号：

2SK3574-ZK

描述：

切换N沟道功率MOSFET[ SWITCHING N-CHANNEL POWER MOSFET ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

88 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3574  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
★ ORDERING INFORMATION  
The 2SK3574 is N-channel MOS FET device that  
features a low on-state resistance and excellent switching  
characteristics, designed for low voltage high current  
applications such as DC/DC converter with synchronous  
rectifier.  
PART NUMBER  
2SK3574  
PACKAGE  
TO-220AB  
2SK3574-S  
2SK3574-ZK  
2SK3574-Z  
TO-262  
TO-263  
TO-220SMDNote  
FEATURES  
Note TO-220SMD package is produced only in Japan.  
•4.5V drive available  
•Low on-state resistance  
RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 24 A)  
•Low gate charge  
QG = 22 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)  
•Built-in gate protection diode  
•Avalanche capability ratings  
•Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30  
±20  
V
V
±48  
A
Note1  
±140  
1.5  
A
Drain Current (pulse)  
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
PT2  
29  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
19  
Note2  
IAS  
Single Avalanche Current  
Note2  
EAS  
36  
mJ  
Single Avalanche Energy  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16260EJ2V0DS00 (2nd edition)  
Date Published September 2002 NS CP(K)  
Printed in Japan  
The mark ! shows major revised points.  
2002  
©
2SK3574  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 30 V, VGS = 0 V  
MIN.  
TYP.  
MAX.  
UNIT  
µA  
µA  
V
10  
±10  
2.5  
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 24 A  
VGS = 10 V, ID = 24 A  
VGS = 4.5 V, ID = 15 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.5  
7.0  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
10.1  
15  
13.5  
24  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
Input Capacitance  
940  
245  
170  
12  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V  
f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
VDD = 15 V, ID = 24 A  
VGS = 10 V  
18  
ns  
Turn-off Delay Time  
Fall Time  
RG = 10 Ω  
39  
ns  
12  
ns  
Total Gate Charge  
QG  
VDD = 24 V  
22  
nC  
nC  
nC  
V
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
3.8  
7
ID = 48 A  
IF = 48 A, VGS = 0 V  
IF = 48 A, VGS = 0 V  
di/dt = 100 A/µs  
1.1  
29  
ns  
Qrr  
24.8  
nC  
★
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
V
GS  
R
L
RG  
= 25 Ω  
90%  
V
GS  
Wave Form  
V
GS  
10%  
90%  
0
R
G
PG.  
GS = 20 → 0 V  
PG.  
50 Ω  
V
DD  
V
DD  
V
DS  
90%  
V
DS  
V
0
GS  
BVDSS  
10% 10%  
V
DS  
Wave Form  
0
I
AS  
V
DS  
τ
I
D
t
d(on)  
t
r
t
d(off)  
tf  
V
DD  
t
on  
toff  
τ = 1 µs  
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
V
DD  
2
Data Sheet D16260EJ2V0DS  
2SK3574  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50 75 100 125 150 175  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
10  
TC = 25°C Single pulse  
ID(pulse)  
PW = 10 µs  
RDS(on)  
Limited  
100 µs  
ID(DC)  
DC  
1 ms  
Power Disspasion  
Limited  
1
10 ms  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
100  
10  
Rth(ch-A) = 83.3°C/W  
Rth(ch-C) = 4.31°C/W  
1
0.1  
0.01  
Single pulse  
100 1000  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
PW - Pulse Width - s  
3
Data Sheet D16260EJ2V0DS  
2SK3574  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
150  
100  
50  
100  
10  
VGS = 10 V  
ch  
°
= 150 C  
T
°
75 C  
°
25 C  
−
°
55 C  
1
4.5 V  
0.1  
0.01  
VDS = 10 V  
Pulsed  
Pulsed  
0
0
1
2
3
0
1
2
3
4
5
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
3
2.5  
2
100  
DS  
V
= 10 V  
DS  
V
I
= 10 V  
Pulsed  
D
= 1 mA  
ch  
°
= 150 C  
T
°
75 C  
25°C  
−55°C  
10  
1
1.5  
1
0.5  
0
0.1  
-50  
0
50  
100  
150  
0.1  
1
10  
100  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
30  
30  
Pulsed  
Pulsed  
25  
20  
25  
20  
15  
VGS = 4.5 V  
15  
ID = 24 A  
10  
10  
10 V  
5
0
5
0
1
10  
100  
1000  
0
5
10  
15  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
4
Data Sheet D16260EJ2V0DS  
2SK3574  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
10000  
25  
VGS = 0 V  
f = 1 MHz  
ID = 24 A  
Pulsed  
20  
VGS =4.5 V  
C iss  
1000  
100  
10  
15  
C oss  
10  
10 V  
C rss  
5
0
0.01  
0.1  
1
10  
100  
-50  
0
50  
100  
150  
VDS - Drain to Source Voltage - V  
Tch - Channel Temperature - °C  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
30  
12  
10  
8
1000  
VDD = 15 V  
VGS = 10 V  
RG = 10 Ω  
25  
20  
15  
10  
5
VDD = 24 V  
15 V  
6 V  
100  
10  
1
td(off)  
tr  
6
td(on)  
VGS  
4
tf  
VDS  
2
ID = 48 A  
20  
0
0
0
5
10  
15  
25  
0.1  
1
10  
100  
QG - Gate Change - nC  
ID - Drain Current - A  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
1000  
100  
10  
1000  
100  
10  
di/dt = 100 A/µs  
GS  
V
= 0 V  
VGS = 10 V  
0 V  
1
0.1  
0.01  
Pulsed  
1.5  
1
0
0.5  
1
0.1  
1
10  
100  
VF(S-D) - Source to Drain Voltage - V  
ID - Drain Current - A  
5
Data Sheet D16260EJ2V0DS  
2SK3574  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
1
120  
100  
80  
60  
40  
20  
0
VDD = 15 V  
RG = 25 Ω  
VGS = 20→0 V  
IAS ≤ 19 A  
IAS = 19 A  
EAS = 36 mJ  
VDD = 15 V  
RG = 25 Ω  
VGS = 20 → 0 V  
Starting Tch = 25°C  
0.1  
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
Starting Tch - Starting Channel Temperature - °C  
L - Inductive Load - mH  
6
Data Sheet D16260EJ2V0DS  
2SK3574  
★
PACKAGE DRAWINGS (Unit: mm)  
1) TO-220AB(MP-25)  
2) TO-262(MP-25 Fin Cut)  
4.8 MAX.  
10.6 MAX.  
4.8 MAX.  
1.3±0.2  
φ
10 TYP.  
3.6±0.2  
1.3±0.2  
10.0 TYP.  
4
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
2.8±0.2  
1.Gate  
2.Drain  
3.Source  
2.54 TYP.  
4.Fin (Drain)  
Note  
4) TO-220SMD(MP-25Z)  
3) TO-263(MP-25ZK)  
4.8 MAX.  
10 TYP.  
4
10.0±0.2  
4.45±0.2  
1.3±0.2  
0.4  
1.3±0.2  
No plating  
8.4 TYP.  
4
0.025 to  
0.25  
1
2
3
1.4±0.2  
0.75±0.3  
2.54 TYP.  
0.5±0.2  
2.54 TYP.  
0.7±0.15  
1.Gate  
2.Drain  
3.Source  
2.54  
0.25  
1
2
3
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
Note This package is produced only in Japan.  
EQUIVALENT CIRCUIT  
Drain  
Remark The diode connected between the gate and  
source of the transistor serves as a protector  
against ESD. When this device actually used,  
an additional protection circuit is externally  
required if a voltage exceeding the rated voltage  
may be applied to this device.  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
7
Data Sheet D16260EJ2V0DS  
2SK3574  
•
The information in this document is current as of September, 2002. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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