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2SK3437

型号：

2SK3437

描述：

DC-DC转换器，继电器驱动器和电机驱动应用[ DC-DC Converter, Relay Drive and Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

239 K

下载PDF手册
2SK3437  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3437  
DC-DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 0.74 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 4.5 S (typ.)  
fs  
Low leakage current: I  
= 100 µA (max) (V  
= 600 V)  
DSS  
DS  
Enhancement mode: V = 3.0~5.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Maximum Ratings  
=
(Ta 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
600  
600  
±30  
10  
V
V
V
DSS  
Drain-gate voltage (R  
= 20 kΩ)  
V
DGR  
GS  
Gate-source voltage  
V
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse  
I
30  
80  
DP  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
JEITA  
―
―
Single pulse avalanche energy  
E
252  
mJ  
(Note 2)  
Avalanche current  
I
10  
8
A
TOSHIBA  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 1.5 g (typ.)  
T
150  
ch  
Storage temperature range  
T
−55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
1.56  
83.3  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2:  
V
= 90 V, T = 25°C (initial), L = 4.41 mH, R = 25 Ω,  
DD  
= 10 A  
ch  
G
I
AR  
Note 3: Repetitive rating: Pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device. Please handle with  
caution.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-10S2B  
Weight: 1.5 g (typ.)  
1
2004-07-06  
2SK3437  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±25 V, V = 0 V  
⎯
±30  
⎯
⎯
⎯
±10  
⎯
µA  
V
GSS  
GS  
DS  
Drain-source breakdown voltage  
Drain cut-OFF current  
V
V
I = ±10 µA, V = 0 V  
G DS  
(BR) GSS  
I
V
DS  
= 600 V, V = 0 V  
GS  
⎯
100  
⎯
µA  
V
DSS  
(BR) DSS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
D
= 10 mA, V  
= 0 V  
600  
3.0  
⎯
⎯
GS  
V
V
DS  
V
GS  
V
DS  
= 10 V, I = 1 mA  
⎯
5.0  
1.0  
⎯
V
th  
DS (ON)  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 5 A  
0.74  
4.5  
1200  
10  
Ω
S
D
⎪Y  
⎪
= 15 V, I = 5 A  
2.0  
⎯
fs  
D
C
C
⎯
iss  
V
DS  
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
rss  
C
oss  
⎯
130  
⎯
Rise time  
t
r
⎯
⎯
⎯
13  
40  
8
⎯
⎯
⎯
10 V  
I
= 5 A  
V
OUT  
D
V
GS  
0 V  
Turn-ON time  
Switching time  
t
on  
R
= 60 Ω  
L
ns  
Fall time  
t
f
∼
−
V
DD  
300 V  
<
Duty 1%, t = 10 µs  
=
w
Turn-OFF time  
t
⎯
⎯
50  
28  
⎯
⎯
off  
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
DD  
400 V, V  
= 10 V, I = 10 A  
nC  
GS  
D
Q
⎯
⎯
16  
12  
⎯
⎯
Gate-source charge  
gs  
Q
Gate-drain (“miller”) charge  
gd  
Source-Drain Ratings and Characteristics  
=
(Ta 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10  
30  
A
A
Continuous drain reverse current (Note 1)  
DR  
I
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
DRP  
⎯
V
I
I
= 10 A, V  
= 10 A, V  
= 0 V  
= 0 V,  
⎯
−1.7  
⎯
V
DSF  
DR  
DR  
GS  
GS  
t
1600  
17  
ns  
µC  
rr  
dI /dt = 100 A/µs  
Q
⎯
DR  
rr  
Marking  
K3437  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2004-07-06  
2SK3437  
I
– V  
I
– V  
DS  
D
DS  
D
10  
8
20  
16  
15  
Common source  
Tc = 25°C  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
15  
10  
7.75  
7.5  
10  
8.5  
7.25  
7.0  
8.0  
6
12  
8
7.5  
7.25  
4
6.75  
6.5  
7.0  
2
4
6.5  
V
GS  
= 6.0 V  
V
GS  
= 6.0 V  
0
0
0
0
4
8
12  
16  
20  
10  
20  
30  
40  
50  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
– V  
V – V  
DS GS  
D
GS  
12  
10  
8
20  
16  
Common source  
= 20 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
12  
8
6
I
D
= 10 A  
4
25  
5
4
2
100  
2.5  
Tc = −55°C  
0
0
0
0
2
4
6
8
10  
4
8
12  
16  
20  
Gate-source voltage  
V
GS  
(V)  
Gate-source voltage  
V
GS  
(V)  
⎪Y ⎪ – I  
R
– I  
DS (ON) D  
fs  
D
100  
10  
1
100  
10  
1
Common source  
= 20 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
25  
100  
Tc = −55°C  
V
GS  
= 10, 15 V  
0.1  
0.1  
0.1  
0.1  
1
10  
100  
1
10  
100  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2004-07-06  
2SK3437  
R
– Tc  
I
– V  
DR DS  
DS (ON)  
2.5  
2.0  
1.5  
1.0  
0.5  
0
100  
10  
1
Common source  
Tc = 25°C  
Common source  
= 10 V  
Pulse test  
V
GS  
Pulse test  
I
D
= 10 A  
5
2.5  
10  
V
GS  
= 0, −1 V  
5
−0.2  
3
1
0.1  
0
−80  
−40  
0
40  
80  
120  
160  
−0.4  
−0.6  
−0.8  
−1  
−1.2  
Channel temperature Tc (°C)  
Drain-source voltage  
V
(V)  
DS  
Capacitance – V  
V
– Tc  
th  
DS  
10000  
1000  
100  
10  
6
5
4
3
2
1
Common source  
= 10 V  
V
DS  
= 1 mA  
I
D
Pulse test  
C
iss  
C
oss  
Common source  
= 0 V  
V
GS  
C
rss  
f = 1 MHz  
Tc = 25°C  
0
−80  
−40  
0
40  
80  
120  
160  
1
0.1  
Channel temperature Tc (°C)  
1
10  
100  
1000  
Drain-source Voltage  
V
DS  
(V)  
P
D
– Tc  
Dynamic input/output characteristics  
100  
80  
500  
20  
Common source  
I
= 10 A  
D
Tc = 25°C  
Pulse test  
400  
300  
200  
100  
0
16  
12  
8
V
DS  
V
= 100 V  
DD  
60  
200  
400  
40  
V
GS  
20  
0
4
0
40  
0
40  
80  
120  
160  
200  
0
10  
20  
30  
Channel temperature Tc (°C)  
Total gate charge  
Q
g
(nC)  
4
2004-07-06  
2SK3437  
r
− t  
w
th  
10  
1
Duty = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
Single pulse  
0.01  
0.001  
10 µ  
100 µ  
1 m  
10 m  
Pulse width  
100 m  
1
10  
t
w
(S)  
E
AS  
– T  
ch  
Safe operating area  
100  
400  
300  
200  
100  
0
I
max (pulsed) *  
D
I
D
max (continuous) *  
100 µs *  
10  
1 ms *  
DC operation  
Tc = 25°C  
1
25  
50  
75  
100  
125  
(°C)  
150  
0.1  
Channel temperature (initial)  
T
ch  
*
Single nonrepetitive pulse  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
B
VDSS  
V
DSS  
max  
15 V  
0.01  
1
10  
100  
1000  
I
AR  
−15 V  
Drain-source voltage  
V
DS  
(V)  
V
DD  
V
DS  
Test circuit  
Wave form  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
R
= 25 Ω  
= 90 V, L = 4.41 mH  
2
VDSS  
G
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
V
B
VDSS  
DD  
5
2004-07-06  
2SK3437  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
• The information contained herein is subject to change without notice.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
6
2004-07-06  
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ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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