请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3390

型号：

2SK3390

描述：

硅N沟道MOS场效应管高频功率放大器[ Silicon N Channel MOS FET UHF Power Amplifier ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

7 页

PDF大小：

80 K

下载PDF手册
2SK3390  
Silicon N Channel MOS FET  
UHF Power Amplifier  
ADE-208-846 (Z)  
1st. Edition  
Aug.2001  
Features  
•
•
High power output, High gain, High efficiency  
PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz)  
Compact package capable of surface mounting  
Outline  
RP8P  
D
S
1
3
2
1
G
1. Gate  
2. Source  
3. Drain  
3
2
Note:  
Marking is “IX”.  
This Device is sensitive to Electro Static Discharge.  
An Adequate handling procedure is requested.  
2SK3390  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
17  
VGSS  
10  
V
ID  
1
A
Note1  
Drain peak current  
Channel dissipation  
Channel temperature  
Storage temperature  
ID(pulse)  
2.5  
A
Note2  
Pch  
20  
W
°C  
°C  
Tch  
150  
Tstg  
–45 to +150  
Note: 1. PW < 1sec, Tch < 150 °C  
2. Value at Tc = 25°C  
Electrical Characteristics  
(Tc = 25°C)  
Item  
Symbol Min  
Typ  
—
Max  
Unit  
µA  
µA  
V
Test Conditions  
Zero gate voltage drain current IDSS  
—
10  
5
VDS = 13.7 V, VGS = 0  
Gate to source leak current  
Gate to source cutoff voltage  
Input capacitance  
IGSS  
—
—
VGS = 10V, VDS = 0  
VGS(off)  
Ciss  
Coss  
Pout  
2.2  
—
—
3.0  
—
—
—
ID = 1mA, VDS = 13.7V  
VGS = 5V, VDS = 0, f = 1MHz  
VDS = 13.7V, VGS = 0, f = 1MHz  
27.5  
10.5  
—
pF  
pF  
W
Output capacitance  
—
Output Power  
6.31  
VDS = 13.7V, IDO = 0.25A  
f = 836 MHz, Pin = 126 mW  
Added Efficiency  
ηadd  
60  
—
—
%
VDS = 13.7V, IDO = 0.25A  
f = 836 MHz, Pin = 126 mW  
Rev.0, Aug. 2001, page 2 of 7  
2SK3390  
Main Characteristics  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
5
4
3
2
1
40  
30  
20  
10  
10 V  
9 V  
8 V  
7 V  
6 V  
5 V  
V
GS  
= 4 V  
Pulse Test  
8 10  
0
0
50  
100  
150  
200  
2
4
6
Drain to Source Voltage  
V
(V)  
DS  
Case Temperature Tc (°C)  
Forward Transfer Admittance vs.  
Drain Current  
Typical Transfer Characteristics  
2.5  
2
10  
Tc = 75°C  
25°C  
3
1
25°C  
Tc = - 25°C  
- 25°C  
1.5  
1
0.3  
0.1  
75°C  
0.5  
0
0.03  
0.01  
V
= 13.7 V  
V
= 13.7 V  
DS  
Pulse Test  
DS  
Pulse Test  
2
3
4
5
6
7
0.01 0.03  
0.1  
0.3  
1
3
10  
Gate to Source Voltage  
V
(V)  
GS  
Drain Current  
I
(A)  
D
Rev.0, Aug. 2001, page 3 of 7  
2SK3390  
Drain to Source Saturatioin Voltage vs.  
Drain Current  
Gate to Source Cutoff Voltage vs.  
Ambient Temperature  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
10  
3
1
25°C  
75°C  
0.3  
0.1  
Tc = - 25°C  
0.03  
0.01  
V
= 10 V  
0.003  
0.001  
GS  
Pulse Test  
V
= 13.7 V  
DS  
- 25  
0.01 0.03 0.1 0.3  
1
3
10  
0
25  
50  
75  
100 125  
Drain Current  
I
(A)  
D
Ambient Temperature Ta (°C)  
Input Capacitance vs.  
Gate to Source Voltage  
Output Capacitance vs.  
Drain to Source Voltage  
100  
29  
28  
27  
26  
30  
10  
3
1
25  
24  
V
= 0  
V
= 0  
GS  
DS  
f = 1 MHz  
f = 1 MHz  
0.1  
0.3  
1
3
10 30  
-10  
- 6  
Gate to Source Voltage  
6 10  
- 2  
2
Drain to Source Voltage  
V
(V)  
V
(V)  
DS  
GS  
Rev.0, Aug. 2001, page 4 of 7  
2SK3390  
Reverse Transfer Capacitance vs.  
Drain to Gate Votage  
Output Power, Added Efficiency vs.  
Input Power  
10  
8
100  
80  
60  
40  
20  
0
10  
3
Pout  
η
add  
6
1
4
0.3  
V
= 13.7 V  
DS  
I = 0.25 A  
2
V
= 0  
GS  
DO  
f = 836 MHz  
f = 1 MHz  
0.1  
0.1  
0
0
0.3  
1
3
10 30  
50  
100  
150 200  
250  
Input power Pin (mW)  
Drain to Gate Voltege  
V
(V)  
DG  
Rev.0, Aug. 2001, page 5 of 7  
2SK3390  
Package Dimensions  
As of January, 2001  
Unit: mm  
5.2 0.15  
2.54 0.2  
1.325 0.15  
0.2  
+0.1  
+0.1  
0.16  
0.5  
−0.06  
−0.05  
4.5 Max  
Hitachi Code  
JEDEC  
RP8P  
EIAJ  
Mass (reference value)  
0.08 g  
Rev.0, Aug. 2001, page 6 of 7  
2SK3390  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://semiconductor.hitachi.com.sg  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 5.0  
Rev.0, Aug. 2001, page 7 of 7  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.189142s