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2SK3322-S

型号：

2SK3322-S

描述：

切换N沟道功率MOSFET[ SWITCHING N-CHANNEL POWER MOSFET ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

91 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3322  
SWITCHING  
N-CHANNEL POWER MOS FET  
ORDERING INFORMATION  
DESCRIPTION  
PART NUMBER  
PACKAGE  
The 2SK3322 is N-Channel DMOS FET device that  
features a low gate charge and excellent switching  
characteristics, and designed for high voltage  
applications such as switching power supply, AC  
adapter.  
2SK3322  
2SK3322-S  
2SK3322-ZJ  
2SK3322-ZK  
TO-220AB (MP-25)  
TO-262  
TO-263(MP-25ZJ)  
TO-263(MP-25ZK)  
★
FEATURES  
• Low gate charge :  
★
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A)  
• Gate voltage rating : ±30 V  
• Low on-state resistance :  
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A)  
• Avalanche capability ratings  
• Surface mount package available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
600  
±30  
±5.5  
±20  
1.5  
V
V
A
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
W
W
°C  
PT2  
65  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
4.0  
°C  
A
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
10.7  
mJ  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V  
The information contained in this document is being issued in advance of the production cycle for the  
product. The parameters for the product may change before final production or NEC Electronics  
Corporation, at its own discretion, may withdraw the product prior to its production.  
Not all products and/or types are availabe in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14114EJ2V0DS00 (2nd edition)  
Date Published August 2003 NS CP(K)  
Printed in Japan  
The mark ★ shows major revised points.  
1999, 2000  
2SK3322  
★
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 600 V, VGS = 0 V  
MIN.  
TYP.  
MAX.  
100  
±10  
3.5  
UNIT  
µA  
µA  
V
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
VGS = ±30 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 2.8 A  
VGS = 10 V, ID = 2.8 A  
VDS = 10 V,  
Gate Cut-off Voltage  
2.5  
1.0  
Note  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
S
Note  
1.7  
550  
115  
13  
2.2  
Ω
pF  
pF  
pF  
Ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V,  
f = 1 MHz  
td(on)  
tr  
VDD = 150 V, ID = 2.8 A,  
VGS = 10 V,  
12  
10  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
RG = 10 Ω  
35  
12  
Total Gate Charge  
QG  
VDD = 450 V,  
15  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V,  
4
ID = 5.5 A  
4.4  
1.0  
1.6  
5.3  
Note  
Body Diode Forward Voltage  
IF = 5.5 A, VGS = 0 V  
IF = 5.5 A, VGS = 0 V,  
di/dt = 50 A/µs  
Reverse Recovery Time  
Reverse Recovery Charge  
µs  
µC  
Qrr  
Note Pulsed  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90%  
PG.  
GS = 20 → 0 V  
V
GS  
V
GS  
10%  
V
DD  
50 Ω  
Wave Form  
0
RG  
V
PG.  
V
DD  
90%  
I
D
90%  
10%  
BVDSS  
I
D
I
AS  
V
0
GS  
10%  
I
D
0
V
DS  
Wave Form  
I
D
t
d(on)  
t
r
t
d(off)  
t
f
VDD  
τ
t
on  
t
off  
τ = 1 s  
µ
Starting Tch  
Duty Cycle ≤ 1%  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
RL  
PG.  
V
DD  
50 Ω  
2
Data Sheet D14114EJ2V0DS  
2SK3322  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
100  
V
DS = 10 V  
Pulsed  
Pulsed  
10  
10  
1
V
GS = 10 V  
8.0 V  
6.0 V  
T
ch = 125˚C  
75˚C  
5
0
25˚C  
0.1  
−25˚C  
0.01  
0
5
10  
15  
10  
20  
30  
40  
50  
0
VGS - Gate to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE  
vs. CHANNEL TEMPERATURE  
5
4
3
2
1
0
10  
V
ID  
DS = 10 V  
= 1 mA  
T
ch = −25˚C  
25˚C  
75˚C  
125˚C  
1
V
DS = 10 V  
Pulsed  
0.1  
0.1  
1
10  
−50  
0
50  
100  
150  
I
D
- Drain Current - A  
T
ch - Channel Temperature - ˚C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
3
2
1
0
Pulsed  
3
V
GS = 10 V  
I = 4.0 A  
D
20 V  
2.8 A  
2
1
0
Pulsed  
100  
0
5
10  
15  
0.1  
1
10  
- Drain Current - A  
V
GS - Gate to Source Voltage - V  
I
D
3
Data Sheet D14114EJ2V0DS  
2SK3322  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
100  
10  
4
3
I
D
= 4.0 A  
2.8 A  
0
0.1  
2
V
GS = 10 V  
0 V  
1
0
V
GS = 10 V  
Pulsed  
Pulsed  
1.5  
0.01  
0
0.5  
1
−50  
0
50  
100  
150  
V
SD - Source to Drain Voltage - V  
T
ch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100  
10  
1
10000  
1000  
V
GS = 0 V  
f = 1 MH  
Z
t
d(off)  
t
f
td(on)  
Ciss  
t
r
100  
10  
Coss  
Crss  
V
V
R
DD = 150 V  
GS = 10 V  
G
= 10 Ω  
0.1  
1
0.1  
0.1  
1
10  
1
10  
100  
ID - Drain Current - A  
V
DS - Drain to Source Voltage - V  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
10000  
1000  
100  
16  
14  
12  
10  
8
di/dt = 50 A/µ  
S
I = 4.0 A  
D
V
GS = 0 V  
V
DD = 450 V  
300 V  
600  
400  
200  
0
150 V  
V
GS  
6
4
V
DS  
2
0
10  
0
4
8
12  
16  
0.01  
0.1  
1
10  
Q
G
- Gate Charge - nC  
ID - Drain Current - A  
4
Data Sheet D14114EJ2V0DS  
2SK3322  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
100  
80  
60  
40  
20  
0
70  
60  
50  
40  
30  
20  
10  
0
0
20  
40 60  
80 100 120 140 160  
0
20 40  
60  
80 100 120 140 160  
T
ch - Channel Temperature - ˚C  
T
C
- Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
T
C
= 25˚C  
Single Pulse  
I
D(pulse)  
I
D(DC)  
1
0.1  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
Rth(ch-A) = 83.3˚C/W  
10  
1
Rth(ch-C) = 1.93˚C/W  
0.1  
0.01  
Single Pulse  
100 1000  
µ
10  
1 m  
10 m  
100 m  
1
10  
100  
µ
PW - Pulse Width - sec  
5
Data Sheet D14114EJ2V0DS  
2SK3322  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
V
R
V
DD =150 V  
=25 Ω  
GS =20 V → 0 V  
G
100  
80  
60  
40  
20  
0
I
AS ≤4.0A  
I
AS = 4.0 A  
1.0  
0.1  
R
G
= 25 Ω  
DD = 150 V  
GS = 20 V → 0 V  
V
V
Starting Tch = 25˚C  
100  
1 m  
L - Inductive Load - H  
10 m  
10  
µ
µ
25  
50  
75  
100  
125  
150  
Starting Tch - Starting Channel Temperature - ˚C  
6
Data Sheet D14114EJ2V0DS  
2SK3322  
★
PACKAGE DRAWINGS (Unit: mm)  
1) TO-220AB (MP-25)  
2) TO-262  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
4.8 MAX.  
1.3±0.2  
φ
3.6±0.2  
10 TYP.  
10.0 TYP.  
4
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
1.Gate  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
2.8±0.2  
2.54 TYP.  
2.Drain  
3.Source  
4.Fin (Drain)  
3) TO-263 (MP-25ZJ)  
4) TO-263 (MP-25ZK)  
4.8 MAX.  
10.0±0.3  
4.45±0.2  
10 TYP.  
1.3±0.2  
No plating  
7.88 MIN.  
1.3±0.2  
4
4
0.025 to  
0.25  
1
2
3
1.4±0.2  
0.7±0.2  
0.5±0.2  
0.75±0.2  
2.54 TYP.  
2.54 TYP.  
2.54  
0.25  
1
2
3
1.Gate  
2.Drain  
3.Source  
1.Gate  
2.Drain  
4.Fin (Drain)  
3.Source  
4.Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Remark The diode connected between the gate and source of the transistor  
serves as a protector against ESD. When this device actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
7
Data Sheet D14114EJ2V0DS  
2SK3322  
•
The information in this document is current as of August, 2003. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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