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2SK3304

型号:

2SK3304

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

69 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3304  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3304 is N-Channel MOS FET device that features a  
Low gate charge and excellent switching characteristics, and  
designed for high voltage applications such as switching  
power supply.  
PART NUMBER  
2SK3304  
PACKAGE  
TO-3P  
FEATURES  
(TO-3P)  
Low gate charge :  
G
DD  
GS  
D
Q = 44 nC TYP. (V = 450 V, V = 10 V, I = 7.0 A)  
Gate voltage rating : ±30 V  
Low on-state resistance :  
DS(on)  
R
GS  
D
= 2.0 MAX. (V = 10 V, I = 4.0 A)  
Avalanche capability ratings  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
V
900  
V
V
GSS(AC)  
V
±30  
D(DC)  
I
±7  
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±21  
A
C
T
Total Power Dissipation (T = 25°C)  
P
130  
W
W
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
3.0  
stg  
Storage Temperature  
T
–55 to + 150  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
7
AS  
E
147  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting T = 25°C, V = 150 V, R = 25 Ω, V = 20 V 0 V  
ch  
DD  
G
GS  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 2000 NS CP(K)  
Printed in Japan  
D13992EJ1V0DS00 (1st edition)  
2000  
©
2SK3304  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 900 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
100  
±100  
3.5  
µA  
nA  
V
Gate to Source Leakage Current  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
IGSS  
VGS = ±30 V, VDS = 0 V  
VDS = 10 V, ID = 1.0 mA  
VDS = 20 V, ID = 4.0 A  
VGS = 10 V, ID = 4.0 A  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
2.5  
2.5  
4.7  
1.6  
1300  
240  
55  
S
2.0  
VDS = 10 V  
VGS = 0 V  
f = 1 MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
td(on)  
tr  
td(off)  
tf  
VDD = 150 V  
20  
ID = 4.0 A  
Rise Time  
44  
VGS(on) = 10 V  
RG = 10 Ω, RL 36 Ω  
Turn-off Delay Time  
73  
Fall Time  
45  
Total Gate Charge  
QG  
VDD = 450 V  
VGS = 10 V  
ID = 7.0 A  
44  
Gate to Source Charge  
QGS  
6
Gate to Drain Charge  
QGD  
28  
nC  
V
Body Diode Forward Voltage  
VF(S-D)  
IF = 7.0 A, VGS = 0 V  
1.0  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
IF = 7.0 A, VGS = 0 V  
2.4  
µs  
di/dt = 50 A/µs  
Qrr  
13.5  
µC  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90 %  
PG.  
V
GS  
V
GS(on)  
10 %  
V
DD  
50 Ω  
Wave Form  
0
R
G
V
GS = 20 0 V  
PG.  
V
DD  
90 %  
I
D
90 %  
10 %  
BVDSS  
I
D
I
AS  
V
0
GS  
10 %  
d(on)  
I
D
0
V
DS  
Wave Form  
I
D
t
r
t
t
d(off)  
t
f
VDD  
τ
t
on  
toff  
τ = 1µs  
Starting Tch  
Duty Cycle 1 %  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
R
L
PG.  
VDD  
50 Ω  
2
Data Sheet D13992EJ1V0DS00  
2SK3304  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
140  
120  
100  
80  
100  
80  
60  
40  
20  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
- Case Temperature - °C  
0
20 40 60 80 100 120 140 160  
T
C
TC - Case Temperature - °C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
1
10  
8
I
D(pulse) = 21 A  
V
GS = 10 V  
V
GS = 20 V  
I
D(DC) = 7 A  
V
GS = 6 V  
6
V)  
Limited  
= 10  
GS  
RDS(on)  
(at V  
4
2
T
C
= 25˚C  
Single Pulse  
Pulsed  
16 20  
0.1  
8
0
4
12  
1
10  
100  
1000  
V
DS - Drain to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
100  
10  
T
A
= 125˚C  
75˚C  
25˚C  
25˚C  
1
0.1  
0.01  
Pulsed  
0
5
10  
15  
V
GS - Gate to Source Voltage - V  
3
Data Sheet D13992EJ1V0DS00  
2SK3304  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
Rth(ch-A)= 41.7˚C  
Rth(ch-C)= 0.96˚C  
1
0.1  
0.01  
T
C
= 25˚C  
Single Pulse  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
5.0  
100  
10  
Pulsed  
4.0  
3.0  
2.0  
1.0  
0.0  
T
A
= 25˚C  
25˚C  
75˚C  
125˚C  
I
D
D
=7A  
=4A  
1
I
V
DS =20V  
Pulsed  
0.1  
0.1  
1
10  
100  
0
5
10  
15  
20  
25  
I
D - Drain Current - A  
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
8.0  
6.0  
4.0  
2.0  
0.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
Pulsed  
V
DS = 10 V  
V
GS =10V  
I
D = 1.0 mA  
0.01  
0.1  
1
10  
100  
0
50  
50  
100  
150  
I
D
- Drain Current - A  
Tch - Channel Temperature - ˚C  
4
Data Sheet D13992EJ1V0DS00  
2SK3304  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
100  
10  
1
5.0  
Pulsed  
4.0  
3.0  
2.0  
1.0  
0.0  
V
GS = 10V  
V
GS = 0V  
1.0  
V
GS = 10V  
I
D = 4.0A  
0.1  
0.0  
0
50  
150  
100  
0.5  
1.5  
50  
T
ch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
1000  
100  
10  
V
GS = 0 V  
f = 1MHz  
Ciss  
t
f
t
d(off)  
100  
10  
1
t
d(on)  
C
oss  
rss  
C
V
V
R
DD = 150V  
GS = 10V  
t
r
G
= 10Ω  
1
1
10  
100  
1000  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
10000  
1000  
100  
800  
600  
400  
200  
ID = 7.0A  
14  
12  
10  
8
V
DD = 450 V  
300 V  
V
GS  
150 V  
6
4
V
DS  
2
µ
s
di/dt=50A/  
V
GS =0 V  
10  
0
0
10  
20  
30  
40  
50  
60  
0.1  
1
10  
100  
I
F
- Drain Current - A  
Q
G
- Gate Charge - nC  
5
Data Sheet D13992EJ1V0DS00  
2SK3304  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY vs  
STARTING CHANNEL TEMPERATURE  
150  
125  
100  
75  
100  
10  
V
R
DD = 150 V  
= 25 Ω  
E
AS = 147 mJ  
G
V
GS = 20 V 0 V  
I
D
(peak) = IAS  
I
AS = 7.0A  
50  
1
V
DD = 150V  
25  
V
GS = 20V0 V  
R
G
= 25Ω  
Starting Tch = 25˚C  
0.1  
0
0.0001  
0.001  
0.01  
0.1  
25  
50  
75  
100  
125  
150  
175  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D13992EJ1V0DS00  
2SK3304  
PACKAGE DRAWING (Unit : mm)  
TO-3P (MP-88)  
EQUIVALENT CIRCUIT  
Drain  
3.2±0.2  
4.7 MAX.  
1.5 TYP.  
15.7 MAX.  
Body  
Diode  
4
Gate  
2
3
1
Source  
2.2±0.2  
1.0±0.2  
0.6±0.1  
2.8±0.1  
5.45 TYP.  
5.45 TYP.  
1: Gate  
2: Drain  
3: Source  
4: Fin (Drain)  
Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
7
Data Sheet D13992EJ1V0DS00  
2SK3304  
The information in this document is current as of June, 2000. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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