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2SK3081

型号：

2SK3081

描述：

硅N沟道MOS FET高速电源开关[ Silicon N Channel MOS FET High Speed Power Switching ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

9 页

PDF大小：

52 K

下载PDF手册
2SK3081  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-636A (Z)  
3rd. Edition  
Jun 1998  
Features  
•
Low on-resistance  
RDS(on) = 10mΩ typ.  
4V gate drive devices.  
High speed switching  
•
•
Outline  
TO–220AB  
D
G
1. Gate  
2. Drain(Flange)  
3. Source  
1
2
3
S
2SK3081  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
30  
VGSS  
ID  
±20  
V
45  
A
Note1  
Drain peak current  
ID(pulse)  
180  
A
Body-drain diode reverse drain current IDR  
45  
A
Channel dissipation  
Channel temperature  
Storage temperature  
PchNote2  
75  
W
°C  
°C  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
—
Max  
—
Unit  
V
Test Conditions  
Drain to source breakdown voltage V(BR)DSS 30  
ID = 10mA, VGS = 0  
IG = ±100µA, VDS = 0  
VDS = 30 V, VGS = 0  
VGS = ±16V, VDS = 0  
ID = 1mA, VDS = 10V  
ID = 20A, VGS = 10VNote3  
Gate to source breakdown voltage V(BR)GSS ±20  
—
—
V
Zero gate voltege drain current  
Gate to source leak current  
Gate to source cutoff voltage  
IDSS  
—
—
1.0  
—
—
10  
µA  
µA  
V
IGSS  
—
±10  
2.0  
14  
VGS(off)  
RDS(on)  
—
Static drain to source on state  
resistance  
10  
mΩ  
Static drain to source on state  
resistance  
RDS(on)  
—
15  
25  
mΩ  
ID = 20A, VGS = 4VNote3  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
20  
—
—
—
—
—
—
—
—
—
30  
—
—
—
—
—
—
—
—
—
—
S
ID = 20A, VDS = 10VNote3  
VDS = 10V  
1570  
1100  
410  
32  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VGS = 0  
f = 1MHz  
VGS = 10V, ID = 20A  
RL = 0.5Ω  
300  
180  
200  
1.0  
Turn-off delay time  
Fall time  
td(off)  
tf  
Body–drain diode forward voltage VDF  
IF = 45A, VGS = 0  
Body–drain diode reverse  
recovery time  
trr  
75  
ns  
IF = 45A, VGS = 0  
diF/ dt =50A/µs  
Note: 3. Pulse test  
2
2SK3081  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
100  
75  
1000  
300  
100  
10 µs  
30  
10  
3
50  
Operation in  
this area is  
limited by R  
DS(on)  
1
25  
0.3  
0.1  
Ta = 25°C  
1 shot pulse  
0
3
Drain to Source Voltage  
30  
50  
100  
150  
200  
0.1 0.3  
1
10  
100  
V
(V)  
DS  
Case Temperature Tc (°C)  
Typical Output Characteristics  
10 V  
8 V  
Typical Transfer Characteristics  
100  
80  
60  
40  
20  
100  
80  
60  
40  
20  
6 V  
5 V  
Pulse Test  
25°C  
Tc = –25°C  
4.5 V  
4 V  
75°C  
3.5 V  
3 V  
V
= 10 V  
DS  
V
GS  
= 2.5 V  
Pulse Test  
0
0
2
4
6
8 10  
(V)  
GS  
2
4
6
8
10  
Gate to Source Voltage  
V
Drain to Source Voltage  
V
(V)  
DS  
3
2SK3081  
Static Drain to Source on State Resistance  
vs. Drain Current  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
100  
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Pulse Test  
50  
I
= 50 A  
D
20  
10  
5
V
GS  
= 4 V  
10 V  
20 A  
10 A  
12  
Gate to Source Voltage  
0
4
8
16  
20  
1
2
5
10 20  
50 100  
(A)  
V
(V)  
Drain Current  
I
GS  
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
50  
50  
Pulse Test  
20  
10  
5
40  
30  
20  
Tc = –25 °C  
25 °C  
10 A  
50 A  
I
= 20 A  
D
75 °C  
V
GS  
= 4 V  
2
10  
0
1
10, 20 A  
V
= 10 V  
DS  
Pulse Test  
10 V  
0
0.5  
0.1  
–40  
40  
80  
120  
160  
0.3  
1
3
10  
D
30  
100  
Case Temperature Tc (°C)  
Drain Current  
I
(A)  
4
2SK3081  
Body–Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
1000  
500  
10000  
5000  
2000  
1000  
Ciss  
200  
100  
50  
Coss  
500  
Crss  
200  
100  
5
20  
10  
di / dt = 50 A / µs  
V
GS  
= 0  
V
= 0, Ta = 25 °C  
f = 1 MHz  
GS  
0.1 0.3  
1
3
10  
30  
(A)  
100  
0
10  
20  
30  
40  
50  
Reverse Drain Current  
I
DR  
Drain to Source Voltage  
V
(V)  
DS  
Dynamic Input Characteristics  
Switching Characteristics  
50  
40  
30  
20  
10  
20  
1000  
500  
I
= 45 A  
D
16  
12  
8
t
d(off)  
200  
100  
50  
V
V
DD  
= 5 V  
10 V  
15 V  
GS  
V
t
f
DS  
t
r
t
d(on)  
4
0
V
= 15 V  
10 V  
5 V  
DD  
V
= 10 V, V  
= 10 V  
20  
10  
GS  
DD  
PW = 5 µs, duty < 1 %  
0
20  
40  
60  
80  
100  
1
30  
(A)  
0.1 0.3  
3
10  
100  
Gate Charge Qg (nc)  
Drain Current  
I
D
5
2SK3081  
Reverse Drain Current vs.  
Source to Drain Voltage  
100  
80  
60  
40  
20  
10 V  
5 V  
V
= 0, –5 V  
GS  
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
Source to Drain Voltage  
V
(V)  
SD  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
Tc = 25°C  
1
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 1.67 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
6
2SK3081  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
50Ω  
= 30 V  
90%  
td(off)  
td(on)  
t
f
tr  
7
2SK3081  
Package Dimensions  
Unit: mm  
10.16±0.2  
9.5  
+ 0.1  
– 0.08  
4.44±0.2  
f 3.6  
8.0  
1.26±0.15  
1.2±0.1  
1.27±0.1  
1.5 max  
0.5±0.1  
2.7 max  
0.76 ±0.1  
2.54 ±0.5  
2.54 ±0.5  
TO–220AB  
SC–46  
—
Hitachi Code  
EIAJ  
JEDEC  
8
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
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