Silicon MOS FETs (Small Signal)
2SK3064
Silicon N-Channel MOS FET
unit: mm
Secondary battery pack (Li ion battery, etc.)
For switching
2.1±0.1
0.425
1.25±0.1
0.425
■ Features
1
● High-speed switching
3
● S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
● Low-voltage drive (Vth: −1 to 2V)
● Low Ron
2
■ Absolute Maximum Ratings (Ta = 25°C)
0.2±0.1
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Symbol
VDS
VGSO
ID
Ratings
30
Unit
V
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
±20
V
100
mA
mA
mW
°C
Marking Symbol: 2D
Max drain current
IDP
200
Allowable power dissipation
Channel temperature
Storage temperature
PD
150
Tch
150
Tstg
−55 to +150
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain current
Symbol
IDSS
Conditions
min
typ
max
0.1
±1
Unit
µA
µA
V
VDS = 30V, VGS = 0
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
IGSS
VGS = ±20V, VDS = 0
Vth
VDS = 5V, ID = 1µA
1
2
| Yfs |
RDS(on)
ton
VDS = 5V, ID = 10mA
15
mS
Ω
VDS = 5V, ID = 10mA
30
150
35
50
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
ns
Turn-off time
toff
ns
1
