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2SK3062

型号:

2SK3062

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

71 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3062  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3062  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3062-S  
FEATURES  
Low on-state resistance  
2SK3062-ZJ  
TO-263  
DS(on)1  
GS  
D
R
R
= 8.5 mMAX. (V = 10 V, I = 35 A)  
DS(on)2  
GS  
D
= 12 mMAX. (V = 4.0 V, I = 35 A)  
iss  
iss  
Low C : C = 5200 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
GS  
DSS  
V
Drain to Source Voltage (V = 0 V)  
60  
V
DS  
GSS(AC)  
GSS(DC)  
Gate to Source Voltage (V = 0 V)  
V
±20  
+20, 10  
±70  
V
V
DS  
Gate to Source Voltage (V = 0 V)  
V
D(DC)  
I
Drain Current (DC)  
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±280  
A
C
T
Total Power Dissipation (T = 25°C)  
P
100  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to +150  
35  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
122.5  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
1.25  
83.3  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 1999 NS CP(K)  
Printed in Japan  
D13101EJ1V0DS00 (1st edition)  
1998,1999  
©
2SK3062  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 35 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
6.3  
8.2  
1.5  
87  
8.5  
12  
mΩ  
mΩ  
V
VGS = 4.0 V, ID = 35 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 35 A  
VDS = 60 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.0  
20  
2.0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
IGSS  
±10  
Ciss  
5200  
1300  
480  
75  
Output Capacitance  
Coss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Crss  
f = 1 MHz  
td(on)  
ID = 35 A  
Rise Time  
tr  
VGS(on) = 10 V  
VDD = 30 V  
1150  
360  
480  
95  
Turn-off Delay Time  
td(off)  
tf  
Fall Time  
RG = 10 Ω  
Total Gate Charge  
QG  
ID = 70 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QGS  
VDD = 48 V  
13  
QGD  
VGS(on) = 10 V  
IF = 70 A, VGS = 0 V  
30  
VF(S-D)  
0.97  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
IF = 70 A, VGS = 0 V  
70  
ns  
Qrr  
di/dt = 100 A/µs  
140  
nC  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
GS  
R
L
R
G
= 25 Ω  
90%  
GS(on)  
V
GS  
Wave Form  
V
10%  
10%  
0
R
G
PG.  
PG.  
50 Ω  
V
DD  
R = 10 Ω  
G
VDD  
V
GS = 200V  
I
D
90%  
90%  
10%  
I
D
V
0
GS  
BVDSS  
I
D
0
Wave Form  
I
AS  
VDS  
τ
I
D
t
d(on)  
t
r
t
d(off)  
tf  
V
DD  
t
on  
toff  
τ = 1 µs  
Duty Cycle 1 %  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
V
DD  
2
Data Sheet D13101EJ1V0DS00  
2SK3062  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
140  
120  
100  
80  
100  
80  
60  
40  
20  
60  
40  
20  
0
25 50 75 100 125 150 175 200  
- Case Temperature - °C  
0
25 50 75 100 125 150 175 200  
TC  
TC  
- Case Temperature - °C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
Pulsed  
I
D(pulse)=280 A  
= 10V)  
V
GS = 10 V  
GS  
200  
100  
I
D(DC)=70 A  
V
GS = 4.0V  
Limited(@V  
RDS(on)  
10  
1
T
C
= 25˚C  
Single Pulse  
2
4
0.1  
0
3
1
1
10  
100  
V
DS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
100  
10  
1
T
A
= 125˚C  
75˚C  
25˚C  
25˚C  
0.1  
Pulsed  
VDS = 10V  
0
1
2
3
4 5  
VGS - Gate to Source Voltage - V  
3
Data Sheet D13101EJ1V0DS00  
2SK3062  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
Rth(ch-A)= 83.3 ˚C/W  
Rth(ch-C)= 1.25˚C/W  
1
0.1  
0.01  
TC = 25˚C  
Single Pulse  
0.001  
100  
10µ  
µ
1m  
10m  
100m  
1
10  
100  
1000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
30  
Pulsed  
100  
10  
1
T
ch = 25˚C  
25˚C  
75˚C  
125˚C  
20  
10  
ID =35A  
V
DS =10V  
Pulsed  
0.1  
1.0  
10  
100  
0
5
10  
15  
I
D
- Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
Pulsed  
V
DS = 10V  
= 1mA  
30  
20  
10  
0
I
D
2.0  
1.5  
1.0  
V
GS =4.0V  
10V  
0.5  
0
0.1  
1
10  
100  
50  
0
50  
100  
150  
I
D
- Drain Current - A  
Tch - Channel Temperature - ˚C  
4
Data Sheet D13101EJ1V0DS00  
2SK3062  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
20  
15  
100  
10  
1
V
GS = 4.0V  
V
GS = 4.0V  
10V  
0V  
10  
5
0.1  
I
D
= 35A  
150  
ch - Channel Temperature - ˚C  
Pulsed  
0
0.5  
0
0
50  
1.5  
100  
1
50  
T
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100  
10  
V
DS = 30V  
GS = 10V  
= 10Ω  
V
GS = 0 V  
V
f = 1MHz  
10000  
1000  
R
G
t
r
t
f
Ciss  
t
d(off)  
t
d(on)  
100  
10  
1
Coss  
Crss  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
80  
60  
40  
20  
1000  
100  
16  
µ
s
di/dt=100A/  
ID = 70A  
V
GS =0 V  
14  
12  
10  
8
V
DD = 12 V  
30 V  
48 V  
6
10  
1
4
2
0
0
25  
50  
75  
100  
0.1  
1
10  
100  
I
F
- Drain Current - A  
QG - Gate Charge - nC  
5
Data Sheet D13101EJ1V0DS00  
2SK3062  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
160  
140  
120  
100  
80  
100  
10  
V
R
DD = 30 V  
G
= 25 Ω  
I
AS = 35A  
VGS = 20 V 0 V  
I
AS 35 A  
60  
1.0  
0.1  
40  
R
G
= 25Ω  
V
V
DD = 30V  
20  
GS = 20V0 V  
Starting Tch = 25°C  
0
10µ  
100µ  
1m  
10m  
25  
50  
75  
100  
125  
150  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D13101EJ1V0DS00  
2SK3062  
PACKAGE DRAWINGS (Unit : mm)  
1)TO-220AB (MP-25)  
2)TO-262 (MP-25 Fin Cut)  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
10.0  
4.8 MAX.  
1.3±0.2  
(10)  
4
φ
3.6±0.2  
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
2.8±0.2  
1.Gate  
2.Drain  
2.54 TYP.  
3.Source  
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
3)TO-263 (MP-25ZJ)  
4.8 MAX.  
(10)  
4
1.3±0.2  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
1.4±0.2  
0.7±0.2  
Gate  
0.5±0.2  
2.54 TYP.  
2.54 TYP.  
1
2
3
Gate  
Protection  
Diode  
1.Gate  
2.Drain  
3.Source  
Source  
4.Fin (Drain)  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
7
Data Sheet D13101EJ1V0DS00  
2SK3062  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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