Power F-MOS FETs
2SK3048
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
unit: mm
4.6±0.2
9.9±0.3
2.9±0.2
● No secondary breakdown
φ3.2±0.1
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
1.4±0.2
2.6±0.1
1.6±0.2
● Switching power supply
0.8±0.1
0.55±0.15
■ Absolute Maximum Ratings (TC = 25°C)
2.54±0.3
3
5.08±0.5
1
2
Parameter
Symbol
Ratings
Unit
V
1: Gate
2: Drain
Drain to Source breakdown voltage VDSS
600
3: Source
TO-220D Package
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±30
V
±3
A
Drain current
IDP
±6
A
EAS*
22.5
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
35
PD
W
2
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 5mH, IL = 3A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 480V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
IDR = 3A, VGS = 0
min
typ
max
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
100
±1
IGSS
Drain to Source breakdown voltage VDSS
600
2
Gate threshold voltage
Vth
5
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
1.7
2.5
2.5
Ω
1.5
S
−1.5
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
750
80
25
15
25
90
40
pF
pF
pF
ns
ns
ns
ns
VDS = 20V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
td(off)
tf
VDD = 200V, ID = 2A
Turn-off time (delay time)
Fall time
VGS = 10V, RL = 100Ω
1
