MITSUBISHI RF POWER MOS FET
2SK2975
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for
Dimensions in mm
OUTLINE DRAWING
VHF/UHF power amplifiers applications.
INDEX MARK
(TOP)
(BOTTOM)
FEATURES
• High power gain:Gpe³ 8.4dB
@VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package
(connected internally to source)
2.0
4.9
2
3
1
t=1.2MAX
3.50
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
INDEX
MARK
TYPE No.
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Ratings
Parameter
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
Conditions
Unit
V
Symbol
VDSS
VGSS
Pch
30
±20
V
Tc=25˚C
(Note2)
10
W
˚C
˚C
Tj
175
Tstg
-40 to +110
Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14´ 2.8´ 2mm)
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Limits
Typ
Symbol
Parameter
Test conditions
Unit
Min
1.0
Max
10
1
µA
µA
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=7V, IDS=1mA
IDSS
IGSS
VTH
Ciss
Coss
1.7
Threshold voltage
V
pF
pF
45
80
8
VGS=10V, VDS=0V,f=1MHz
VDS=10V, VGS=0V,f=1MHz
Pout
hD
7
W
%
VDS=9.6V, Pin=1W,f=450MHz
50
55
Note: Above parameters,ratings,limits and conditions are subject to change.
Nov. ´97
