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2SK2906-01

型号:

2SK2906-01

描述:

N沟道MOS - FET的[ N-channel MOS-FET ]

品牌:

FUJI[ FUJI ELECTRIC ]

页数:

3 页

PDF大小:

251 K

N-channel MOS-FET  
2SK2906-01  
7,8mW  
±100A 150W  
FAP-IIIB Series  
60V  
> Features  
> Outline Drawing  
- High Current  
- Low On-Resistance  
- No Secondary Breakdown  
- Low Driving Power  
- Avalanche Rated  
> Applications  
- Motor Control  
- General Purpose Power Amplifier  
DC-DC converters  
-
> Maximum Ratings and Characteristics  
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified  
Item  
Symbol  
Rating  
Unit  
V
Drain-Source-Voltage  
Continous Drain Current  
Pulsed Drain Current  
V
60  
DS  
I
±100  
±400  
±30  
A
D
I
A
D(puls)  
Gate-Source-Voltage  
V
V
GS  
Maximum Avalanche Energy  
Max. Power Dissipation  
Operating and Storage Temperature Range  
E
1268.3  
150  
mJ*  
W
AV  
P
D
T
150  
°C  
°C  
ch  
T
-55 ~ +150  
L=0.169mH,Vcc=24V  
stg  
Electrical Characteristics (TC=25°C), unless otherwise specified  
-
Item  
Symbol  
Test conditions  
Min.  
60  
2,5  
Typ.  
3,0  
Max.  
Unit  
V
ID=1mA  
VGS=0V  
Drain-Source Breakdown-Voltage  
Gate Threshhold Voltage  
Zero Gate Voltage Drain Current  
BV  
DSS  
ID=10mA  
VDS=60V  
VGS=0V  
VDS=VGS  
Tch=25°C  
Tch=125°C  
VDS=0V  
V
I
3,5  
500  
1,0  
V
GS(th)  
DSS  
10  
0,2  
10  
µA  
mA  
nA  
mW  
mW  
S
VGS=±30V  
Gate Source Leakage Current  
I
100  
GSS  
Drain Source On-State Resistance  
R
DS(on)  
ID=50A  
ID=50A  
VGS=10V  
VDS=25V  
5,7  
55  
7,8  
Forward Transconductance  
Input Capacitance  
g
C
C
C
t
25  
fs  
VDS=25V  
5400  
2100  
550  
29  
8100  
3150  
830  
50  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
A
iss  
oss  
rss  
d(on)  
r
VGS=0V  
f=1MHz  
VCC=30V  
VGS=10V  
ID=100A  
RGS=10 W  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On-Time ton (ton=td(on)+tr)  
t
200  
160  
150  
350  
240  
230  
Turn-Off-Time toff (ton=td(off)+tf)  
t
d(off)  
f
t
Tch=25°C  
Avalanche Capability  
I
L = 100µH  
100  
AV  
SD  
rr  
IF=100A VGS=0V Tch=25°C  
IF=50A VGS=0V  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
t
1,0  
85  
1,5  
V
ns  
µC  
-dI/dt=100A/µs Tch=25°C  
Q
0,21  
rr  
-
Thermal Characteristics  
Item  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance  
R
R
channel to case  
channel to ambient  
0,83 °C/W  
35,0 °C/W  
th(ch-c)  
th(ch-a)  
 
N-channel MOS-FET  
2SK2906-01  
7,8mW  
60V  
±100A  
150W  
FAP-IIIB Series  
> Characteristics  
Typical Output Characteristics  
Drain-Source On-State Resistance vs. Tch  
Typical Transfer Characteristics  
ID=f(VDS); 80µs pulse test; TC=25°C  
RDS(on) = f(Tch); ID=50A; VGS=10V  
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C  
VDS [V]  
Tch [°C]  
VGS [V]  
®
®
®
Typical Drain-Source On-State-Resistance vs. ID  
Typical Forward Transconductance vs. ID  
Gate Threshold Voltage vs. Tch  
RDS(on)=f(ID); 80µs pulse test; TC=25°C  
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C  
VGS(th)=f(Tch); ID=10mA; VDS=VGS  
ID [A]  
ID [A]  
Tch [°C]  
®
®
®
Typical Capacitances vs. VDS  
Typical Gate Charge Characteristic  
Forward Characteristics of Reverse Diode  
C=f(VDS); VGS=0V; f=1MHz  
VGS=f(Qg); ID=100A; TC=25°C  
IF=f(VSD); 80µs pulse test; Tch=25°C  
VDS [V]  
VSD [V]  
®
Qg [nC] ®  
®
Maximum Avalanche Energy vs. starting Tch  
Safe Operation Area  
ID=f(VDS): D=0,01, Tc=25°C  
Eas=f(starting Tch): VCC=24V; IAV £ 100A  
Transient Thermal impedance  
Zthch=f(t) parameter:D=t/T  
starting Tch [°C]  
VDS [V]  
®
®
t [s] ®  
This specification is subject to change without notice!  
N-channel MOS-FET  
2SK2906-01  
7,8mW  
60V  
±100A 150W  
FAP-IIIB Series  
> Characteristics  
Typical Switching Characteristics  
t=f(ID): VCC = 30V, VGS = 10V, RG = 10W  
VSD [V]  
®
Power Dissipation  
PD=f(TC)  
125  
100  
75  
50  
25  
0
0
25  
50  
75  
100  
125  
150  
TC [°C]  
Maximum Avalanche Current vs. starting Tch  
IAV=f(starting Tch)  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
starting Tch [°C]  
This specification is subject to change without notice!  
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ETC

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ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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