2SK2904-01
FUJI POWER MOSFET
Drain-source on-state resistance
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=10mA
RDS(on)=f(Tch):ID=40A,VGS=10V
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
typ.
max.
min.
typ.
0
-50
0
50
100
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=80A,Tch=25°C
25
50
40
30
20
10
0
100n
10n
1n
VDS
VGS
20
15
10
5
Vcc=48V
30V
12V
Ciss
Coss
Crss
0
100p
10-2
10-1
100
101
102
0
20
40
60
80
100
120
140
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=30V,VGS=10V,RG=10 Ω
104
103
102
101
200
180
160
140
120
100
80
td(off)
tf
60
10V
5V
VGS=0V
tr
40
20
td(on)
10-1
100
101
102
0.0
0.2
0.4
0.6
0.8
VSD [V]
1.0
1.2
1.4
1.6
ID [A]
3
