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2SK2828

型号：

2SK2828

描述：

硅N沟道MOS FET高速电源开关[ Silicon N Channel MOS FET High Speed Power Switching ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

10 页

PDF大小：

48 K

下载PDF手册
2SK2828  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-514 C (Z)  
4th. Edition  
Feb 1999  
Features  
•
•
•
•
•
•
Low on-resistance  
High speed switching  
Low drive current  
No secondary breakdown  
Suitable for switching regulator and DC–DC converter  
Avalanche ratings  
Outline  
TO–3P  
D
2
1
G
1. Gate  
2. Drain  
(Flange)  
3. Source  
1
2
3
3
S
2SK2828  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
700  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
±30  
V
ID  
12  
A
1
Drain peak current  
ID(pulse)  
*
48  
A
Body-drain diode reverse drain current IDR  
12  
A
Channel dissipation  
Channel temperature  
Storage temperature  
Pch*2  
175  
W
°C  
°C  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
2
2SK2828  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
700  
±30  
—
Typ  
—
Max  
—
Unit  
V
Test Conditions  
Drain to source breakdown voltage V(BR)DSS  
Gate to source breakdown voltage V(BR)GSS  
ID = 10mA, VGS = 0  
IG = ±100µA, VDS = 0  
VGS = ±25V, VDS = 0  
VDS = 560 V, VGS = 0  
ID = 1mA, VDS = 10V*3  
ID = 6A, VGS = 10V*3  
—
—
V
Gate to source leak current  
Zero gate voltege drain current  
Gate to source cutoff voltage  
IGSS  
—
±10  
100  
3.0  
1.2  
µA  
µA  
V
IDSS  
—
—
VGS(off)  
RDS(on)  
2.0  
—
—
Static drain to source on state  
resistance  
0.9  
Ω
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Total gate charge  
Gate to source charge  
Gate to drain charge  
Turn-on delay time  
Rise time  
|yfs|  
Ciss  
Coss  
Crss  
Qg  
5.5  
—
—
—
—
—
—
—
—
—
—
—
—
9.0  
1850  
400  
45  
—
—
—
—
—
—
—
—
—
—
—
—
—
S
ID = 6A, VDS = 10V*3  
VDS = 10V  
pF  
pF  
pF  
nc  
nc  
nc  
ns  
ns  
ns  
ns  
V
VGS = 0  
f = 1MHz  
35  
VDD = 400V  
VGS = 10V  
Qgs  
Qgd  
td(on)  
tr  
8
10  
ID = 12A  
25  
ID = 6A, RL = 5Ω  
VGS = 10V  
65  
Turn-off delay time  
Fall time  
td(off)  
tf  
140  
55  
Body–drain diode forward voltage VDF  
0.95  
2.5  
IF = 12A, VGS = 0  
Body–drain diode reverse  
recovery time  
trr  
µs  
IF = 12A, VGS = 0  
diF/ dt =100A/µs  
Note: 3. Pulse test  
3
2SK2828  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
200  
150  
100  
50  
100  
50  
20  
10  
5
2
Operation in  
this area is  
1
limited by R  
DS(on)  
0.5  
0.2  
0.1  
Ta = 25 °C  
10 20  
0
50  
100  
150  
200  
5
50 100 200  
500 1000  
(V)  
Drain to Source Voltage  
V
DS  
Case Temperature Tc (°C)  
Typical Transfer Characteristics  
= 10 V  
Typical Output Characteristics  
20  
16  
12  
8
20  
16  
12  
8
10 V  
8 V  
V
DS  
Pulse Test  
6 V  
5 V  
–25°C  
25°C  
4.5 V  
= 4 V  
Tc = 75°C  
4
V
GS  
4
Pulse Test  
40  
0
0
2
4
6
8
(V)  
GS  
10  
10  
20  
30  
50  
Gate to Source Voltage  
V
Drain to Source Voltage  
V
(V)  
DS  
4
2SK2828  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
5
20  
16  
12  
8
Pulse Test  
Pulse Test  
2
1
I
= 10 A  
5 A  
D
0.5  
V
GS  
= 10, 15V  
0.2  
0.1  
4
0.05  
12  
Gate to Source Voltage  
0
4
8
16  
20  
1
2
5
10 20  
50 100  
(A)  
V
(V)  
Drain Current  
I
GS  
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
50  
20  
4.0  
Pulse Test  
3.2  
2.4  
1.6  
10  
5
Tc = –25 °C  
I
= 10 A  
D
25 °C  
75 °C  
V
= 10 V  
2
1
GS  
5 A  
0.8  
0
V
= 10 V  
DS  
Pulse Test  
0.5  
–40  
0
40  
80  
120  
160  
0.2  
0.5  
1
2
5
10 20  
Case Temperature Tc (°C)  
Drain Current  
I
(A)  
D
5
2SK2828  
Body–Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
5
5000  
Ciss  
2000  
1000  
500  
2
1
Coss  
200  
100  
50  
0.5  
V
GS  
= 0  
0.2  
0.1  
f = 1 MHz  
20  
di / dt = 100 A / µs  
10  
5
Crss  
V
= 0, Ta = 25 °C  
GS  
0.05  
0.5  
0.1 0.2  
1
2
5
10 20 50  
I (A)  
DR  
0
10  
20  
30  
40  
50  
Reverse Drain Current  
Drain to Source Voltage V  
(V)  
DS  
Dynamic Input Characteristics  
= 12 A  
Switching Characteristics  
500  
1000  
20  
16  
12  
8
I
D
V
GS  
t
200  
100  
50  
d(off)  
800  
600  
400  
200  
V
= 100 V  
250 V  
DD  
t
f
400 V  
V
DS  
t
d(on)  
20  
10  
5
t
r
4
0
V
= 400 V  
250 V  
DD  
V
= 10 V, V  
= 30 V  
GS  
DD  
100 V  
PW = 5 µs, duty < 1 %  
10 30  
(A)  
0
20  
40  
60  
80  
100  
0.1 0.3  
1
3
100  
Gate Charge Qg (nc)  
Drain Current  
I
D
6
2SK2828  
Reverse Drain Current vs.  
Source to Drain Voltage  
50  
40  
30  
20  
10  
V
= 0, –5 V  
GS  
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
Source to Drain Voltage  
V
(V)  
SD  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
q
q
g
q
ch – c(t) = s (t) • ch – c  
ch – c = 0.71 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
7
2SK2828  
Switching Time Test Circuit  
Vin Monitor  
Switching Time Waveform  
Vout  
Monitor  
90%  
D.U.T.  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
50W  
= 30 V  
90%  
td(off)  
td(on)  
t
f
tr  
8
2SK2828  
Package Dimentions  
Unit: mm  
f
3.2 ± 0.2  
5.0 max  
1.5 typ  
16.0 max  
1.6 typ  
2.8 typ  
1.4 max  
2.0 typ  
0.6 ± 0.2  
1.0 ± 0.2  
0.9 typ  
3.6 typ  
1.0 typ  
TO–3P  
SC–65  
—
Hitachi Code  
EIAJ  
5.45 ± 0.2  
5.45 ± 0.2  
JEDEC  
9
2SK2828  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,  
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no  
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in  
connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact  
Hitachi’s sales office before using the product in an application that demands especially high quality and  
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,  
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment  
or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for  
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and  
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed  
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in  
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating  
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the  
Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.  
Hitachi, Ltd.  
Semiconductor & IC Div.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Electronic components Group  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
2000 Sierra Point Parkway Dornacher Straße 3  
Brisbane, CA 94005-1897 D-85622 Feldkirchen, Munich  
Tel: <1> (800) 285-1601  
Fax: <1> (303) 297-0447  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
10  
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