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2SK2723

型号:

2SK2723

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

86 K

DATA SHEET  
MOS Field Effect Power Transistors  
2SK2723  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
PACKAGE DIMENSIONS  
(in millimeter)  
DESCRIPTION  
4.5 ± 0.2  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching spplications.  
10.0 ± 0.3  
3.2 ± 0.2  
2.7 ± 0.2  
FEATURES  
Low On-Resistance  
RDS (on) 1 = 40mMax. (VGS = 10 V, ID = 13 A)  
RDS (on) 2 = 60mMax. (VGS = 4 V, ID = 13 A)  
Low Ciss  
Ciss = 830 pF Typ.  
Built-in G-S Protection Diode  
Isolated TO-220 Package  
0.7 ± 0.1  
1.3 ± 0.2  
1.5 ± 0.2  
2.54  
2.5 ± 0.1  
0.65 ± 0.1  
2.54  
1.Gate  
2.Drain  
3.Source  
1
2 3  
MP-45F (ISOLATED TO-220)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain  
Drain to Source Voltage  
Gate to Source Voltage  
VDSS  
VGSS  
ID (DC)  
ID (pulse)  
PT  
60  
±20  
V
V
Drain Current (DC)  
±25  
A
Body  
Diode  
Drain Current (pulse)*  
±100  
2.0  
A
Gate  
Total Power Dissipation (TA = 25 °C)  
Total Power Dissipation (Tc = 25 °C)  
Channel Temperature  
W
W
°C  
°C  
PT  
25  
Tch  
150  
Gate Protection  
Diode  
Source  
Storage Temperature  
Tstg  
55 to +150  
*PW 10 µs, Duty Cycle 1%  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this  
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage  
may be applied to this device.  
The information in this document is subject to change without notice.  
Document No. D10623EJ2V0DS00 (2nd edition)  
Date Published April 1996 P  
Printed in Japan  
1994  
©
2SK2723  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain to Source  
SYMBOL  
RDS (on) 1  
RDS (on) 2  
VGS (off)  
y fs  
TEST CONDITIONS  
VGS = 10 V, ID = 13 A  
VGS = 4 V, ID = 13 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 13 A  
VDS = 60 V, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
MIN.  
TYP.  
28  
MAX.  
UNIT  
mΩ  
mΩ  
V
40  
60  
On-state Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
45  
1.0  
8.0  
1.6  
18  
2.0  
S
IDSS  
10  
µA  
µA  
pF  
pF  
pF  
ns  
IGSS  
±10  
Ciss  
830  
430  
185  
21  
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td (on)  
tr  
ID = 13 A  
Rise Time  
VGS (on) = 10 V  
185  
100  
110  
35  
ns  
Turn-Off Delay Time  
td (off)  
tf  
VDD = 30 V  
ns  
Fall Time  
RG = 10 Ω  
ns  
Total Gate Charge  
QG  
ID = 25 A  
nC  
nC  
nC  
V
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
VDD = 48 V  
2.8  
15  
QGD  
VGS = 10 V  
VF (S-D)  
tr r  
IF = 25 A, VGS = 0  
IF = 25 A, VGS = 0  
di/dt = 100 A/µs  
1.0  
60  
ns  
Qr r  
125  
nC  
Test Circuit 1 Switching Time  
Test Circuit 2 Gate Charge  
D.U.T  
D.U.T  
V
GS  
I = 2 mA  
G
R
L
R
L
90 %  
V
GS  
V
GS (on)  
Wave Form  
10 %  
10 %  
0
R
G
PG.  
PG.  
VDD  
VDD  
RG  
= 10 Ω  
50 Ω  
I
D
90 %  
90 %  
10 %  
I
D
VGS  
ID  
Wave Form  
0
0
t
d (on)  
t
r
t
d (on)  
t
r
t
t
on  
t
off  
t = 1µs  
Duty Cycle 1 %  
2
2SK2723  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
0
20 40 60 80 100 120 140 160  
T
C
- Case Temperature - °C  
TC - Case Temperature - °C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
I
D(pulse)  
Pulsed  
V
GS=20V  
100  
80  
I
D(DC)  
V
GS=10V  
60  
40  
20  
1
V
GS=4V  
T
C
= 25 °C  
Single Pulse  
0.1  
0.1  
4
8
1
10  
100  
0
6
2
V
DS  
-
Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1000  
100  
10  
T
ch=-25°C  
25°C  
75°C  
125°C  
1
V
DS=10V  
0
1
2
3
4
5
6
7
8
V
GS- Gate to Source Voltage - V  
3
2SK2723  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a)=62.5°C/W  
Rth(ch-c)=5.0°C/W  
1
0.1  
0.01  
Single Pulse  
0.001  
100  
10µ  
µ
1m  
10m  
100m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
1000  
100  
10  
Pulsed  
V
DS=10V  
Pulsed  
60  
T
ch=-25°C  
25°C  
40  
20  
75°C  
ID=13A  
125°C  
1
1
10  
100  
1 000  
0
10  
20  
30  
I
D
- Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
80  
60  
40  
20  
0
Pulsed  
V
DS = 10 V  
= 1 mA  
I
D
2.0  
1.5  
V
GS=4V  
1.0  
0.5  
0
V
GS=10V  
- 50  
0
50  
100  
150  
1
10  
Drain Current - A  
100  
I
D
-
Tch - Channel Temperature - °C  
4
2SK2723  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
Pulsed  
80  
60  
40  
100  
10  
1
VGS=10V  
V
GS=4V  
VGS=0  
VGS=10V  
20  
0
0.1  
ID  
= 13A  
0
0
- 50  
1.5  
0.5  
1.0  
100  
150  
50  
Tch - Channel Temperature -°C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10 000  
1 000  
1 000  
100  
V
GS = 0  
f = 1 MHz  
t
r
t
f
C
iss  
t
d(off)  
d(on)  
C
oss  
t
C
rss  
100  
10  
10  
1
V
=30V  
VDD =10V  
RGS  
=10Ω  
G
0.1  
1
10  
100  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DIODE CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1 000  
100  
16  
14  
12  
10  
8
µ
80  
60  
40  
20  
di/dt =100A/ s  
VGS = 0  
I = 25A  
D
VGS  
V
DD=12V  
30V  
48V  
6
4
10  
1
2
0
VDS  
0.1  
1
10  
100  
0
10  
20  
30  
40  
IF - Dionde Current - A  
Q
G - Gate Charge - nC  
5
2SK2723  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
TEI-1202  
IEI-1209  
C10535E  
C10943X  
MEI-1202  
X10679E  
TEA-1034  
TEA-1035  
TEA-1037  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
6
2SK2723  
[MEMO]  
7
2SK2723  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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