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2SK2710

型号:

2SK2710

描述:

MOSFET[ MOSFET ]

品牌:

SANKEN[ SANKEN ELECTRIC ]

页数:

1 页

PDF大小:

38 K

2SK2710  
External dimensions  
2 ...... FM100  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
600  
max  
V(BR) DSS  
IGSS  
IDSS  
V
nA  
µA  
V
ID = 100µA, VGS = 0V  
VGS = ±30V  
VDSS  
VGSS  
ID  
600  
±30  
V
V
±100  
100  
4.0  
VDS = 600V, VGS = 0V  
VDS = 10V, ID = 1mA  
VDS = 20V, ID = 6A  
±12  
A
VTH  
2.0  
7.5  
3.0  
11  
1
ID (pulse)  
±48  
A
*
Re (yfs)  
RDS (on)  
Ciss  
Coss  
Crss  
td (on)  
tr  
S
0.42  
1900  
410  
240  
35  
0.55  
VGS = 10V, ID = 6A  
PD  
EAS  
85 (Tc = 25ºC)  
400  
W
mJ  
A
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
2
*
VDS = 10V, f = 1.0MHz,  
VGS = 0V  
IAS  
12  
Tch  
Tstg  
150  
ºC  
ºC  
ID = 6A, VDD = 250V,  
RL = 20.8, VGS = 10V,  
See Figure 2 on Page 5.  
45  
55 to +150  
td (off)  
tf  
160  
70  
1: PW 100µs, duty cycle 1%  
2: VDD = 30V, L = 5.5mH, IL = 12A, unclamped, RG = 50,  
See Figure 1 on Page 5.  
*
*
VSD  
0.95  
1.5  
ISD = 12A, VGS = 0V  
VDS ID Characteristics  
VGS ID Characteristics  
ID RDS (ON) Characteristics  
0.5  
0.4  
0.3  
12  
10  
8
12  
10  
8
VGS = 10V  
VDS = 20V  
10V  
5.5V  
6
TC = 55ºC  
25ºC  
6
5V  
0.2  
0.1  
0
4
4
2
0
125ºC  
2
VGS = 4.5V  
15  
0
0
5
10  
20  
0
2
4
6
8
0
2
4
6
8
10  
12  
VDS (V)  
VGS (V)  
ID (A)  
I
D Re(yfs) Characteristics  
VGS VDS Characteristics  
TC RDS (ON) Characteristics  
20  
10  
5
10  
8
1.2  
1.0  
0.8  
0.6  
VDS = 20V  
ID = 6A  
VGS = 10V  
TC = 55ºC  
25ºC  
125ºC  
6
ID = 12A  
ID = 6A  
4
0.4  
0.2  
0
1
2
0
0.5  
0.3  
4
5
10  
20  
150  
0.05 0.1  
0.5  
1
5
12  
50  
0
50  
100  
ID (A)  
VGS (V)  
Tc (ºC)  
VDS Capacitance Characteristics  
V
SD IDR Characteristics  
Safe Operating Area  
ID (pulse) max  
Ta PD Characteristics  
(Tc=25ºC)  
10000  
5000  
12  
10  
8
50  
90  
VGS = 0V  
80  
70  
60  
50  
40  
30  
20  
10  
0
f= 1MHz  
ID max  
10  
5
Ciss  
1000  
500  
6
VGS = 0V  
5V,10V  
1
4
Coss  
Crss  
0.5  
2
100  
50  
Without heatsink  
0.1  
0
0
10  
20  
30  
40  
50  
0
0.5  
1.0  
1.5  
0
50  
100  
Ta (ºC)  
150  
3
5
10  
50 100  
VDS (V)  
500 700  
VDS (V)  
VSD (V)  
38  
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ETC

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ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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