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2SK2685

型号:

2SK2685

描述:

的GaAs HEMT[ GaAs HEMT ]

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

10 页

PDF大小:

52 K

2SK2685  
GaAs HEMT  
ADE-208-400  
1st. Edition  
Application  
UHF low noise amplifier  
Features  
Excellent low noise characteristics.  
Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)  
High associated gain.  
Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)  
High voltage.  
VDS = 6 or more voltage.  
Small package. (CMPAK-4)  
Outline  
CMPAK–4  
2
3
1
1. Source  
2. Gate  
4
3. Source  
4. Drain  
2SK2685  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
VGSO  
VGDO  
ID  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Gate to drain voltage  
Drain current  
6
–6  
V
–7  
V
20  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
100  
Tch  
125  
Tstg  
–55 to +125  
Attention: This device is very sensitive to electro static discharge.  
It is recommended to adopt appropriate cautions when handling this transistor.  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
–20  
–2.0  
70  
Unit  
µA  
V
Test conditions  
Gate to source leak current  
Gate to source cutoff voltage  
Drain current  
IGSS  
VGS = –6 V, VDS = 0  
VDS = 3 V, ID = 100 µA  
VGS(off)  
IDSS  
–0.3  
35  
50  
mA  
VDS = 3 V, VGS = 0  
(Pulse Test)  
Forward transfer admittance  
Associated gain  
|yfs|  
40  
16  
60  
1.0  
mS  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
VDS = 3 V, ID = 10 mA,  
f = 1 kHz  
Ga  
17.0  
15.2  
21.4  
19.7  
0.83  
1.08  
0.52  
0.74  
VDS = 3 V, ID = 10 mA,  
f = 2 GHz  
Associated gain  
Ga  
VDS = 3 V, ID = 3 mA,  
f = 2 GHz  
Associated gain  
Ga  
VDS = 3 V, ID = 10 mA,  
f = 900 MHz  
Associated gain  
Ga  
VDS = 3 V, ID = 3 mA,  
f = 900 MHz  
Minimum noise figure  
Minimum noise figure  
Minimum noise figure  
Minimum noise figure  
Note: Marking is “ZT–”.  
Fmin  
Fmin  
Fmin  
Fmin  
VDS = 3 V, ID = 10 mA,  
f = 2 GHz  
VDS = 3 V, ID = 3 mA,  
f = 2 GHz  
VDS = 3 V, ID = 10 mA,  
f = 900 MHz  
VDS = 3 V, ID = 3 mA,  
f = 900 MHz  
2
2SK2685  
Typical Output Characteristics  
20  
16  
12  
8
Maximum Channel Power  
Dissipation Curve  
200  
150  
100  
50  
–0.3 V  
–0.1 V  
Pulse Test  
4
VGS = –0.9 V  
0
1
2
3
4
5
0
50  
100  
150  
200  
Drain to Source Voltage VDS (V)  
Ambient Temperature Ta (°C)  
Forward Transfer Admittance vs.  
Gate to Source Voltage  
Typical Transfer Characteristics  
100  
100  
80  
60  
40  
20  
VDS = 3 V  
Pulse Test  
VDS = 3 V  
Pulse Test  
80  
60  
40  
20  
0
–2.0  
–2.0  
–1.6  
–1.2  
–0.8  
–0.4  
0
–1.6  
–1.2  
–0.8  
–0.4  
0
Gate to Source Voltage VGS (V)  
Gate to Source Voltage VGS (V)  
3
2SK2685  
Forward Transfer Admittance vs.  
Drain Current  
Associated Gain vs. Drain Current  
f = 900 MHz  
30  
20  
10  
100  
80  
60  
40  
20  
VDS = 3 V  
Pulse Test  
3 V  
1 V  
3 V  
VDS = 1 V  
f = 2 GHz  
0
10  
20  
30  
0
4
8
12  
16  
20  
Drain Current ID (mA)  
Drain Current ID (mA)  
Minimum Noise Figure vs. Drain Current  
Associated Gain vs. Drain to Source Voltage  
3
2
1
30  
20  
10  
f = 900 MHz  
2 GHz  
f = 2 GHz  
3 V  
1 V  
3 V  
ID = 10 mA  
f = 900 MHz  
10  
0
20  
30  
0
2
4
6
8
10  
Drain Current ID (mA)  
Drain to Source Voltage VDS (V)  
4
2SK2685  
Minimum Noise Figure vs.  
Drain to Source Voltage  
Isolation vs. Drain Current  
3 V  
50  
40  
30  
20  
10  
3.0  
2.0  
1.0  
ID = 10 mA  
VDS = 1 V  
2 GHz  
f = 900 MHz  
20  
f = 900 MHz  
4
0
10  
30  
0
2
6
8
10  
Drain Current ID (mA)  
Drain to Source Voltage VDS (V)  
Isolation vs. Drain Current  
50  
40  
30  
20  
10  
3 V  
VDS = 1 V  
f = 2 GHz  
0
10  
20  
30  
Drain Current ID (mA)  
5
2SK2685  
S11 Parameter vs. Frequency  
S12 Parameter vs. Frequency  
1
90°  
Scale : 0.02/div.  
60°  
0.8  
1.5  
0.6  
120°  
2
0.4  
3
150°  
30°  
4
5
0.2  
10  
0.2  
0.4 0.6 0.81.0 1.5 2  
3 4 5 10  
0
180°  
0°  
–10  
–0.2  
–0.4  
–5  
–4  
–3  
–30°  
–150°  
–2  
–60°  
–0.6  
–120°  
–1.5  
–0.8  
–1  
–90°  
Condition : ID = 10 mA, Zo = 50  
200 to 2000 MHz (200 MHz step)  
(VDS = 1 V)  
Condition : ID = 10 mA, Zo = 50 Ω  
200 to 2000 MHz (200 MHz step)  
(VDS = 1 V)  
(VDS = 3 V)  
(VDS = 3 V)  
S22 Parameter vs. Frequency  
S21 Parameter vs. Frequency  
90°  
1
Scale : 2/div.  
60°  
0.8  
1.5  
0.6  
120°  
2
0.4  
3
150°  
30°  
4
5
0.2  
10  
0.2  
0.4 0.6 0.81.0 1.5 2  
3 4 5 10  
0
180°  
0°  
–10  
–0.2  
–5  
–4  
–30°  
–150°  
–3  
–0.4  
–2  
–60°  
–120°  
–0.6  
–1.5  
–0.8  
–1  
–90°  
Condition : ID = 10 mA, Zo = 50 Ω  
200 to 2000 MHz (200 MHz step)  
(VDS = 1 V)  
Condition : ID = 10 mA, Zo = 50 Ω  
200 to 2000 MHz (200 MHz step)  
(VDS = 1 V)  
(VDS = 3 V)  
(VDS = 3 V)  
6
2SK2685  
S Parameter (VDS = 1 V, ID = 10 mA, ZO = 50 )  
Freq.  
(MHz)  
200  
S11  
S21  
S12  
S22  
MAG.  
0.996  
0.980  
0.977  
0.970  
0.952  
0.938  
0.916  
0.896  
0.882  
0.859  
ANG.  
–4.8  
MAG.  
5.12  
5.13  
5.07  
4.94  
4.84  
4.74  
4.67  
4.55  
4.47  
4.36  
ANG.  
175.8  
169.9  
165.4  
161.6  
156.5  
152.7  
147.7  
144.1  
140.0  
135.8  
MAG.  
ANG.  
89.8  
88.2  
83.3  
81.5  
79.3  
76.0  
74.8  
73.1  
72.0  
70.3  
MAG.  
0.688  
0.682  
0.674  
0.668  
0.658  
0.648  
0.636  
0.622  
0.611  
0.597  
ANG.  
–3.2  
0.00691  
0.0143  
0.0210  
0.0276  
0.0399  
0.0404  
0.0462  
0.0523  
0.0578  
0.0630  
400  
–9.5  
–6.5  
600  
–15.0  
–19.9  
–24.4  
–29.2  
–34.0  
–38.2  
–42.9  
–47.1  
–10.6  
–13.8  
–17.2  
–20.7  
–23.7  
–27.1  
–29.9  
–33.1  
800  
1000  
1200  
1400  
1600  
1800  
2000  
S Parameter (VDS = 3 V, ID = 10 mA, ZO = 50 )  
Freq.  
(MHz)  
200  
S11  
S21  
S12  
S22  
MAG.  
0.998  
0.988  
0.978  
0.968  
0.953  
0.937  
0.917  
0.900  
0.883  
0.858  
ANG.  
–4.0  
MAG.  
5.13  
5.14  
5.08  
4.95  
4.85  
4.75  
4.68  
4.57  
4.49  
4.37  
ANG.  
175.8  
170.1  
165.2  
161.4  
156.4  
152.5  
147.8  
144.0  
140.1  
135.9  
MAG.  
ANG.  
89.8  
85.5  
83.3  
82.0  
79.2  
76.5  
75.3  
73.2  
72.8  
71.4  
MAG.  
0.802  
0.796  
0.790  
0.783  
0.774  
0.764  
0.753  
0.742  
0.731  
0.718  
ANG.  
–3.2  
0.00581  
0.0110  
0.0163  
0.0216  
0.0363  
0.0312  
0.0358  
0.0401  
0.0442  
0.0477  
400  
–9.2  
–6.5  
600  
–14.5  
–19.4  
–24.2  
–28.7  
–33.3  
–37.5  
–41.9  
–46.1  
–9.8  
800  
–13.3  
–16.4  
–19.4  
–22.5  
–25.4  
–28.1  
–31.1  
1000  
1200  
1400  
1600  
1800  
2000  
7
Unit: mm  
2.0 ± 0.2  
1.3 ± 0.2  
0.65 0.65  
+ 0.1  
+ 0.1  
+ 0.1  
0.3  
0.3  
0.3  
0.4  
– 0.05  
– 0.05  
0.16  
– 0.06  
0 – 0.1  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.65  
0.6  
1.25 ± 0.2  
Hitachi Code  
JEDEC  
EIAJ  
CMPAK-4(T)  
Conforms  
Weight (reference value) 0.006 g  
Datasheet Title  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.  
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then  
consult a physician without delay.  
2. Disposal of this product must be handled, separately from other general refuse, by a specialist  
processing contractor in the same way as dangerous items.  
4
Datasheet Title  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
5
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