2SK2618LS
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
TENTATIVE
Features and Applications
• Low ON-state resistance.
• Low Qg
Absolute Maximum Ratings / Ta=25°C
unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
500
V
V
±30
5
A
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
20
30
A
(Tc=25°C)
W
°C
°C
Tch
150
Tstg
--55 to +150
min
500
typ
max
unit
V
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
ID=1mA
, VGS=0
VDS=500V , VGS=0
VGS=±30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=3A
1.0
±100
5.5
mA
nA
V
IGSS
VGS(off)
| yfs |
3.5
1.5
Forward Transfer Admittance
Static Drain to Source
3.0
S
RDS(on)
ID=3A
, VGS=15V
0.95
1.25
Ω
on State Resistance
Input Capacitance
Ciss
Coss
Crss
Qg
700
250
120
20
pF
pF
pF
nC
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=5A
GS=10V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
td(on)
tr
20
20
50
25
ns
ns
ns
ns
V
See Specified Test
Circuit
Turn-oFF Delay Time
Fall Time
td(off)
tf
Diode Forward Voltage
VSD
IS =5A
, VGS = 0
Case Outline
1.2
Switching Time Test Circuit
TO-220FI(LS)
(unit:mm)
4.5
VDD=200V
10.0
2.8
φ 3.2
PW=1µS
D.C.≤0.5%
ID=3A
RL=66.7
VGS=15V
D
VOUT
0.9
1.2
G
0.7
2SK2618LS
RGS
50Ω
P.G
0.75
S
1
2
3
2.55
2.55
Specifications and information herein are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
960329TM2fXHD
