N-channel MOS-FET
100V 0,055W 30A
80W
F-III Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
Typical Transfer Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
RDS(on) = f(Tch); ID=15A; VGS=10V
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
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VDS [V] ®
Tch [°C] ®
VGS [V] ®
Typical Drain-Source On-State-Resistance vs. ID
Typical Transconductance
Gate Threshold Voltage
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
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ID [A] ®
ID [A] ®
Tch [°C] ®
Typical Capacitances
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(VDS); VGS=0V; f=1MHz
VGS=f(Qg); ID=30A
IF=f(VSD); 80µs pulse test; VGS=0V
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VDS [V] ®
Qg [nC] ®
VSD [V] ®
Power Dissipation
Safe Operation Area
PD=f(Tc)
ID=f(VDS): D=0,01, Tc=25°C
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Transient Thermal impedance
Zthch-c=f(t) parameter:D=t/T
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Tch [°C] ®
VDS [V] ®
t [s] ®
This specification is subject to change without notice!
