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2SK2355-Z

型号:

2SK2355-Z

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

67 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel  
MOS Field Effect Transistor designed for high voltage switching  
applications.  
(in millimeter)  
10.6 MAX.  
4.8 MAX.  
1.3 ±0.2  
3.6 ±0.2  
10.0  
FEATURES  
Low On-Resistance  
4
2SK2355: RDS(on) = 1.4 (VGS = 10 V, ID = 2.5 A)  
1 2 3  
2SK2356: RDS(on) = 1.5 (VGS = 10 V, ID = 2.5 A)  
0.5 ±0.2  
1.3 ±0.2  
Low Ciss  
Ciss = 670 pF TYP.  
High Avalanche Capability Ratings  
0.75 ±0.1  
2.54  
2.8 ±0.2  
2.54  
1. Gate  
2. Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
3. Source  
4. Fin (Drain)  
Drain to Source Voltage (2SK2355/2356)  
Gate to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
450/500  
±30  
V
V
JEDEC: TO-220AB  
Drain Current (DC)  
±5.0  
±20  
A
MP-25 (TO-220)  
4.8 MAX.  
(10.0)  
Drain Current (pulse)*  
A
1.3 ±0.2  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (Ta = 25 ˚C)  
Channel Temperature  
50  
W
W
°C  
4
PT2  
1.5  
Tch  
150  
1.4 ±0.2  
Storage Temperature  
Tstg –55 to +150 °C  
1.0 ±0.3  
0.5 ±0.2  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
5.0  
A
(2.54)(2.54)  
EAS  
17.4  
mJ  
1. Gate  
1
2 3  
2. Drain  
*
PW 10 µs, Duty Cycle 1 %  
3. Source  
4. Fin (Drain)  
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0  
MP-25Z (TO-220 SURFACE MOUNT TYPE)  
Drain  
Body  
Diode  
Gate  
Source  
The information in this document is subject to change without notice.  
Document No. D11391EJ3V0DS00 (3rd edition)  
(Previous No. TC-2500)  
Date Published March 1998 N CP(K)  
Printed in Japan  
1994  
©
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
SYMBOL  
MIN.  
TYP.  
0.9  
MAX.  
1.4  
UNIT  
TEST CONDITIONS  
mΩ  
Drain to Source On-Resistance  
RDS(on)  
VGS = 10 V  
ID = 2.5 A  
2SK2355  
2SK2356  
1.0  
1.5  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
VGS(off)  
| yfs |  
IDSS  
IGSS  
Ciss  
Coss  
Crss  
td(on)  
tr  
2.5  
1.0  
3.5  
V
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 2.5 A  
VDS = VDSS, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V  
S
µA  
100  
±100  
nA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
670  
140  
18  
11  
8
Output Capacitance  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
f = 1 MHz  
ID = 2.5 A  
Rise Time  
VGS = 10 V  
Turn-Off Delay Time  
td(off)  
tf  
40  
8
VDD = 150 V  
RG = 10 RL = 60 Ω  
Fall Time  
Total Gate Charge  
QG  
20  
4.5  
9
ID = 5.0 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VDD = 400 V  
VGS = 10 V  
1.0  
270  
1.0  
IF = 5.0 A, VGS = 0  
ns  
nC  
IF = 5.0 A, VGS = 0  
di/dt = 50 A/µs  
Qrr  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Switching Time  
D.U.T.  
D.U.T.  
R
L
L
R
G
= 25 Ω  
50 Ω  
V
GS  
90 %  
GS (on)  
V
GS  
V
10 %  
Wave  
Form  
RG  
0
PG  
GS = 20 - 0 V  
V
DD  
V
DD  
PG.  
R = 10 Ω  
G
V
90 %  
I
D
90 %  
10 %  
I
D
V
GS  
10 %  
0
I
D
BVDSS  
Wave  
Form  
0
I
AS  
V
DS  
t
d (on)  
t
r
t
d (off)  
t
f
I
D
t
V
DD  
t
on  
t
off  
t = 1 µs  
Duty Cycle 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
RL  
IG  
= 2 mA  
VDD  
PG.  
50 Ω  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
70  
100  
80  
60  
50  
40  
30  
60  
40  
20  
10  
20  
0
20  
40  
60  
80 100 120 140 160  
20  
40  
60  
80 100 120 140 160  
0
T
c
- Case Temperature - °C  
T
c
- Case Temperature - °C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
10  
8
Pulsed  
I
D (pulse)  
V
GS = 20 V  
10 V  
µ
µ
8 V  
6
µ
6 V  
I
D (DC)  
4
2SK2355  
2SK2356  
1.0  
0.1  
2
T
C
= 25 °C  
Single Pulse  
0
4
8
12  
16  
1
10  
100  
1000  
V
DS - Drain to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
50  
10  
Pulsed  
1
T
a
= –25 °C  
25 °C  
75 °C  
0.1  
125 °C  
0.05  
0
5
10  
15  
VGS - Gate to Source Voltage - V  
3
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
Rth(ch-a) = 83 °C/W  
10  
1
Rth(ch-c) = 2.5 °C/W  
0.1  
Tc = 25 °C  
Single Pulse  
0.01  
10µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
100  
10  
3.0  
2.0  
1.0  
Pulsed  
VDS = 10 V  
Pulsed  
Ta = –25 °C  
25 °C  
75 °C  
125 °C  
ID = 5 A  
2.5 A  
1 A  
1.0  
0.1  
1.0  
10  
100  
0
10  
20  
30  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
3.0  
2.0  
1.0  
0
Pulsed  
VDS = 10 V  
ID = 1 mA  
4.0  
3.0  
2.0  
1.0  
0
0.01  
0.1  
1
10  
–50  
0
50  
100  
150  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
4
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
50  
10  
Pulsed  
4.0  
3.0  
2.0  
1.0  
0
I
I
D
D
= 4 A  
= 2 A  
V
GS = 0  
10 V  
1.0  
0.1  
V
GS = 10 V  
0.05  
–50  
0
50  
100 150  
1.5  
0
0.5  
1.0  
V
SD - Source to Drain Voltage - V  
Tch - Channel Temperature - °C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
500  
100  
5 000  
1 000  
V
GS = 0  
f = 1.0 MHz  
t
r
t
f
Ciss  
t
d(off)  
Coss  
10  
100  
t
d(on)  
Crss  
V
DD = 100 V  
GS = 10 V  
1.0  
0.5  
V
10  
5
R
G
= 25 Ω  
0.1  
1.0  
10  
100  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
400 16  
5 000  
1 000  
di/dt = 50 A/µs  
I = 5.0 A  
D
14  
12  
10  
8
VGS = 0  
V
DD = 400 V  
250 V  
V
GS  
300  
200  
100  
125 V  
6
4
2
0
100  
50  
V
DS  
0
5
10  
- Gate Charge - nC  
15  
20  
0.1  
1.0  
10  
100  
I
D
- Drain Current - A  
Q
g
5
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
SINGLE AVALANCHE ENERGY vs  
STARTING CHANNEL TEMPERATURE  
SINGLE AVALANCHE CURRENT vs  
INDUCTIVE LOAD  
100  
20  
R
G
= 25 Ω  
DD = 150 V  
GS = 20 V 0  
Starting Tch = 25°C  
I
D(peak) = IAS  
V
R
G
= 25 Ω  
V
V
V
GS = 20 V 0 V  
DD = 150 V  
15  
10  
5
E
AS = 17.4 mJ  
10  
1.0  
0.1  
I
AS = 5.0 A  
0
100µ  
1.0 m  
10 m  
100 m  
25  
50  
75  
100  
125  
150 175  
Starting Tch - Starting Channel Temperature - °C  
L - Inductive Load - H  
6
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
REFERENCE  
Document Name  
Document No.  
C11745E  
C11531E  
C10535E  
C10943X  
MEI-1202  
X10679E  
D12971E  
D12972E  
D13085E  
NEC semiconductor device reliability/quality control system.  
Quality grades on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
Power MOS FET features and application switching to power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this  
device is actually used, an additional protection circuit is externally required if a voltage exceeding the  
rated voltage may be applied to this device.  
7
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96.5  
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