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2SK2353

型号：

2SK2353

描述：

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

119 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2353/2SK2354  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-  
tor designed for high voltage switching applications.  
PACKAGE DIMENSIONS  
(in millimeters)  
4.5 0.2  
10.0 0.ꢀ.  
FEATURES  
• Low On-Resistance  
ꢀ.2 0.2  
2.7 0.2  
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)  
2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)  
• Low Ciss  
Ciss = 670 pF TYP.  
• High Avalanche Capability Ratings  
• Isolate TO-220 Package  
QUALITY GRADE  
Standard  
Pleasereferto"QualitygradeonNECSemiconductorDevices"(Document  
number IEI-1209) published by NEC Corporation to know the  
specification of quality grade on the devices and its recommended  
0.7 0.1  
2.54  
1.ꢀ 0.2  
1.5 0.2  
2.54  
2.5 0.1  
0.65 0.1  
applications.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
1. Gate  
2. Drain  
ꢀ. Source  
Drain to Source Voltage (2SK2353/2354) VDSS  
450/500  
±30  
V
V
1
2 ꢀ  
Gate to Source Voltage  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
Drain Current (DC)  
±4.5  
±18  
A
MP-45F (ISOLATED TO-220)  
Drain Current (pulse)*  
A
Drain  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (Ta = 25 ˚C)  
Channel Temperature  
30  
W
W
˚C  
PT2  
2.0  
Tch  
150  
Body  
Diode  
Storage Temperature  
Tstg –55 to +150 ˚C  
Gate  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
4.5  
A
EAS  
17.4  
mJ  
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %  
Source  
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0  
The information in this document is subject to change without notice.  
Document No. TC-2499  
(O. D. No. TC-8047)  
Date Published November 1994  
Printed in Japan  
P
1994  
©
2SK2353/2SK2354  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
SYMBOL  
MIN.  
TYP.  
1.0  
MAX.  
1.4  
UNIT  
TEST CONDITIONS  
Ω
Drain to Source On-Resistance  
RDS(on)  
VGS = 10 V  
ID = 2.5 A  
2SK2353  
2SK2354  
1.1  
1.5  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
VGS(off)  
| yfs |  
IDSS  
IGSS  
Ciss  
Coss  
Crss  
td(on)  
tr  
2.5  
1.0  
3.5  
V
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 2.5 A  
VDS = VDSS, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V  
S
µA  
nA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
100  
±100  
670  
140  
18  
11  
8
Output Capacitance  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
f = 1 MHz  
ID = 2.5 A  
Rise Time  
VGS(on) = 10 V  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
40  
8
VDD = 150 V  
RG = 10 Ω RL = 60 Ω  
ID = 4.5 A  
Total Gate Charge  
QG  
20  
4.5  
9
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VDD = 400 V  
VGS = 10 V  
1.0  
270  
1.0  
IF = 4.5 A, VGS = 0  
IF = 4.5 A, VGS = 0  
di/dt = 50 A/µs  
ns  
nC  
Qrr  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Switching Time  
D.U.T.  
D.U.T.  
RG  
RL  
L
RG = 25 Ω  
VGS  
90 %  
VGS  
V
GS (on)  
10 %  
Wave  
Form  
0
PG  
VDD  
PG.  
50 Ω  
VDD  
RG = 10 Ω  
VGS = 20 - 0 V  
90 %  
ID  
ID  
90 %  
10 %  
VGS  
0
10 %  
0
ID  
BVDSS  
IAS  
Wave  
Form  
VDS  
t
d (on)  
t
r
t
d (off)  
t
f
ID  
t
VDD  
t
on  
t
off  
t = 1 µs  
Duty Cycle ≤ 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
IG = 2 mA  
RL  
VDD  
PG.  
50 Ω  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2353/2SK2354  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
50  
40  
30  
20  
10  
60  
40  
20  
0
20  
40  
60  
80 100 120 140 160  
20  
40  
60  
80 100 120 140 160  
0
Tc - Case Temperature - ˚C  
Tc - Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
Pulsed  
10 V  
10  
8
ID (pulse)  
VGS = 20 V  
8 V  
µ
µ
ID (DC)  
6
2SK2354  
2SK2353  
4
VGS = 6 V  
1.0  
0.1  
2
Tc = 25 ˚C  
Single Pulse  
1
10  
100  
1000  
0
4
8
12  
16  
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
50  
10  
Pulsed  
1
Ta = –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
0.1  
0.05  
0
5
10  
15  
VGS - Gate to Source Voltage - V  
3
2SK2353/2SK2354  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
Rth(ch-c) = 62.5 ˚C/W  
10  
1
Rth(ch-c) = 4.17 ˚C/W  
0.1  
Tc = 25 ˚C  
Single Pulse  
0.01  
10µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIM TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
100  
10  
30  
20  
10  
VDS = 10 V  
Pulsed  
Pulsed  
Ta = –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
ID = 5 A  
ID = 2.5 A  
ID = 1 A  
1.0  
0.1  
1.0  
10  
100  
0
10  
20  
30  
VGS - Gate to Source Voltage - V  
ID - Drain Current - A  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE  
RESITANCE vs. DRAIN CURRENT  
3.0  
Pulsed  
VDS = 10 V  
ID = 1 mA  
4.0  
3.0  
2.0  
1.0  
0
2.0  
1.0  
0
0.1  
1
10  
–50  
0
50  
100  
150  
ID - Drain Current - A  
Tch - Channel Temperature - ˚C  
4
2SK2353/2SK2354  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
4.0  
3.0  
2.0  
1.0  
0
50  
10  
Pulsed  
ID = 4 A  
ID = 2 A  
VGS = 0  
10 V  
1.0  
0.1  
VGS = 10 V  
0.05  
1.5  
0
0.5  
1.0  
–50  
0
50  
100  
150  
VSD - Source to Drain Voltage - V  
Tch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
5 000  
1 000  
500  
100  
VGS = 0  
f = 1.0 MHz  
tr  
tf  
Ciss  
td(off)  
td(on)  
Coss  
100  
10  
Crss  
VDD = 100 V  
VGS = 10 V  
RG = 25 Ω  
10  
5
1.0  
0.5  
1
10  
100  
1000  
0.1  
1.0  
10  
100  
ID - Drain Current - A  
VDS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
500  
400  
400  
300  
200  
100  
16  
di/dt = 50 A/ns  
ID = 4.5 A  
VGS = 0  
14  
12  
10  
8
VDD = 400 V  
VGS  
250 V  
125 V  
300  
200  
6
4
2
100  
0
VDS  
0
5
10  
15  
20  
0.1  
1.0  
10  
100  
Qg - Gate Charge - nC  
ID - Drain Current - A  
5
2SK2353/2SK2354  
SINGLE AVALANCHE CURRENT vs  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY vs  
STARTING CHANNEL TEMPERATURE  
100  
10  
20  
RG = 25 Ω  
ID(peak) = IAS  
VDD = 150 V  
RG = 25 Ω  
VGS = 20 V → 0  
Starting Tch = 25˚C  
VGS = 20 V → 0 V  
VDD = 150 V  
15  
10  
5
EAS = 17.4 mJ  
IAS = 4.5 A  
1.0  
0.1  
0
100µ  
1.0 m  
10 m  
100 m  
25  
50  
75  
100  
125  
150  
175  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
2SK2353/2SK2354  
REFERENCE  
Document Name  
Document No.  
TEI-1202  
IEI-1209  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
IEI-1207  
IEI-1213  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the  
rated voltage may be applied to this device.  
7
2SK2353/2SK2354  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear  
reactor control systems and life support systems. If customers intend to use NEC devices for above applications  
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact  
our sales people in advance.  
Application examples recommended by NEC Corporation  
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,  
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.  
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime  
systems, etc.  
M4 92.6  
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