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2SK2348

型号:

2SK2348

描述:

高压,高速开关应用[ High-Voltage, High-Speed Switching Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

57 K

Ordering number : EN5415A  
N-Channel Silicon MOSFET  
2SK2348  
High-Voltage, High-Speed  
Switching Applications  
Features  
• Low ON resistance, ultrahigh-speed switching.  
Package Dimensions  
unit: mm  
• High reliability (Adoption of HVP process).  
2131-TO-3JML  
ate  
ain  
ource  
-3JML  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
1200  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
DSS  
GSS  
V
±30  
V
I
I
14  
A
D
Drain Current (pulse)  
Allowable Power Dissipation  
PW10µs, duty cycle1%  
28  
4.6  
A
DP  
P
D
W
W
°C  
°C  
Tc=25°C  
160  
Channel Temperature  
Storage temperature  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
D-S Breakdown Voltage  
V
I =1mA, V =0  
GS  
1200  
V
mA  
nA  
V
(BR)DSS  
DSS  
D
Zero-Gate Voltage Drain Current I  
V
=1200V, V =0  
1.0  
±100  
3.5  
DS  
GS  
DS  
DS  
GS  
Gate-to Source Leak Current  
Cutoff Voltage  
I
V
V
V
=±30V, V =0  
DS  
GSS  
V
=10V, I =1mA  
1.5  
3.0  
GS(off)  
|y |  
D
Forward Transfer Admittance  
Static Drain-to-Source  
ON-State Resistance  
Input Capacitance  
=20V, I =7A  
6.0  
1.0  
S
fs  
D
R
I =7A, V =10V  
1.5  
DS(on)  
D
GS  
Ciss  
Coss  
Crss  
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
3000  
500  
pF  
pF  
pF  
DS  
DS  
DS  
Output Capacitance  
V
V
Reverse Transfer Capacitance  
250  
Continued on next page.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN  
72597TS (KOTO) TA-1033 No.5415-1/4  
2SK2348  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Turn-ON Delay Time  
Rise Time  
t
t
t
t
45  
ns  
ns  
ns  
ns  
V
d(on)  
I =7A, V =10V,  
GS  
180  
850  
230  
r
D
Turn-OFF Delay Time  
Fall Time  
V
=200V, R =50Ω  
DD GS  
d(off)  
f
Diode Forward Voltage  
Reverse Recovery Time  
V
I =14A, V =0  
GS  
1.5  
1.5  
SD  
S
t
I =14A, di/dt=100A/µs  
S
0.75  
µs  
rr  
Switching Time Test Circuit  
I
V
DS  
I
V
DS  
D
D
20  
10  
8
4.5V  
16  
5V  
6
12  
4V  
4
2
0
8
4V  
3V  
3.5V  
4
3V  
0
0
4
8
12  
16  
20  
0
10  
20  
30  
40  
50  
Drain-to-Source Voltage, V  
V
Drain-to-Source Voltage, V  
V
DS  
DS  
I
-
V
GS  
I
D
-
Tc  
D
25  
20  
25  
20  
15  
10  
5
V
=20V  
VGS=10V  
DS  
Tc=  
-
25°C  
25°C  
75°C  
15  
10  
5
0
0
0
2
4
6
8
10  
12  
14  
-
80  
-
40  
0
40  
80  
120  
160  
Case Temperature, Tc  
°C  
Gate-to-Source Voltage, V  
– V  
GS  
No.5415-2/4  
2SK2348  
V
GS  
(off)  
Tc  
SW Time  
I
D
4.0  
3.6  
3
2
VDD=200V  
GS=10V  
P.W.=1µs  
D.C.0.5%  
VDS=10V  
ID=1mA  
V
3.2  
2.8  
2.4  
1000  
7
5
3
2
2.0  
1.6  
100  
1.2  
0.8  
7
5
t
d(on)  
0.4  
0
3
2
7
2
40  
2
3
5
7
2
3
5
7
2
3
-
80  
-
40  
0
40  
80  
120  
160  
0.1  
1.0  
10  
Drain Current, ID – A  
Case Temperature, Tc °C  
R
(on)  
-
V
R (on)  
DS  
-
Tc  
DS  
GS  
2.0  
1.8  
1.6  
2.8  
2.4  
2.0  
1.6  
ID=7A  
Tc=25°C  
ID=7A  
1.4  
1.2  
1.0  
1.2  
0.8  
0.4  
0
0.8  
0.6  
0
2
4
6
8
10  
12  
14  
-
80  
-
0
40  
80  
120  
160  
Case Temperature, Tc °C  
Gate-to-Source Voltage, VGS – V  
| y  
|
| y  
|
fs  
I
fs  
I
D
D
3
2
3
Tc=25°C  
VDS=20V  
GS=10V  
2
V
10  
10  
7
5
7
5
3
2
3
2
1.0  
1.0  
7
5
7
5
3
2
3
2
2
3
2
3
2
3
3
2
3
2
3
7
5
7
5
7
7
5
7
5
7
10  
0.1  
1.0  
10  
0.1  
1.0  
Drain Current, ID – A  
Drain Current, ID – A  
Ciss,Coss,Crss  
-
V
DS  
ASO  
5
2
VGS=0  
f=1MHz  
IDP  
10µs  
3
2
10000  
ID  
7
5
10  
7
5
Ciss  
3
2
3
2
1000  
7
Operation in this area  
is limited by RDS(on).  
1.0  
7
5
5
3
2
3
2
Tc=25°C  
0.1  
7
Single pulse  
5
100  
2
3
2
3
2
0
4
8
12  
16  
20  
24  
28  
32  
5
7
5
7
1000  
10  
100  
Drain-to-Source Voltage, VDS – V  
Drain-to-Source Voltage, VDS – V  
No.5415-3/4  
2SK2348  
P
Ta  
P
Tc  
D
D
5
200  
160  
120  
80  
4.6  
4
3
2
1
0
40  
0
100  
120  
100  
120  
0
20  
140  
160  
0
20  
140  
160  
40  
60  
80  
40  
60  
80  
Ambient Temperature, Ta  
°C  
Case Temperature, Ta  
°C  
No products described or contained herein are intended for use in surgical implants, life-support systems,  
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and  
the like, the failure of which may directly or indirectly cause injury, death or property lose.  
Anyone purchasing any products described or contained herein for an above-mentioned use shall:  
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,  
subsidiaries and distributors and all their officers and employees, jointly and severally, against any  
and all claims and litigation and all damages, cost and expenses associated with such use:  
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or  
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of  
their officers and employees jointly or severally.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-  
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees  
are made or implied regarding its use or any infringements of intellectual property rights or other rights of  
third parties.  
This catalog provides information as of July, 1997. Specifications and information herein are subject to  
change without notice.  
No.5415-4/4  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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