Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
Unit : mm
■ Features
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Avalanche energy capability guaranteed
Low ON-resistance
3.4±0.3
1.0±0.1
8.5±0.2
6.0±0.5
No secondary breakdown
Low-voltage drive
■ Applications
1.5max.
1.1max.
0.5max.
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Non-contact relay
Solenoid drive
0.8±0.1
Motor drive
2.54±0.3
Control equipment
Switching mode regulator
5.08±0.5
1
2
3
1 : Gate
2 : Collector
3 : Emitter
■ Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Symbol
VDSS
VGSS
ID
Rating
80±10
±15
Unit
V
N Type Package
Drain-Source breakdown voltage
Gate-Source voltage
V
■ Equivalent Circuit
DC
Drain current
±10
A
D
Pulse
IDP
±20
A
Avalanche energy capability
EAS *
62.5
mJ
TC= 25˚C
Ta= 25˚C
30
Allowable power
dissipation
PD
W
1.3
Channel temperature
Storage temperature
Tch
150
˚C
˚C
G
Tstg
–55 to +150
* L= 5mH, IL= 5A, 1 pulse
S
■ Electrical Characteristics (Tc = 25˚C)
Parameter
Symbol
Condition
Min
Typ
Max
10
Unit
µ A
µ A
V
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
IDSS
VDS= 70V, VGS= 0
IGSS
VDS= 0, VGS=15V
ID=1mA, VGS= 0
±10
90
VDSS
Vth
70
1
VDS=10V, ID=1mA
VGS=10V, ID= 5A
2.5
V
RDS(on)
RDS(on)
| Yfs
VDSF
trr
1
150
230
5.5
230
370
mΩ
mΩ
S
Drain-Source ON-resistance
2
VGS= 4V, ID= 5A
Forward transadmittance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
|
VDS=10V, ID= 5A
3
IDR=10A, VGS= 0
–1.8
V
L=230µ H, VDD= 30V, VGS= 0
IDR=10A, di/dt= 80A/µ s
0.55
2.2
85
µ s
Qrr
µ s
Ciss
Coss
Crss
ton
pF
Output capacitance
V
DS=10V, VGS= 0, f= 1MHz
250
20
pF
Feedback capacitance
Turn-on time
pF
0.5
0.9
1.9
µ s
VDD= 30V, ID= 5A
Fall time
tf
µ s
VGS=10V, RL= 6Ω
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
td(off)
µ s
Rth(ch-c)
Rth(ch-a)
4.2
96
˚C/W
˚C/W
