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2SK2221

型号:

2SK2221

描述:

硅N沟道MOS FET[ Silicon N-Channel MOS FET ]

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

7 页

PDF大小:

42 K

2SK2220, 2SK2221  
Silicon N-Channel MOS FET  
Application  
Low frequency power amplifier  
Complementary pair with 2SJ351, 2SJ352  
Features  
High power gain  
Excellent frequency response  
High speed switching  
Wide area of safe operation  
Enhancement-mode  
Good complementary characteristics  
Equipped with gate protection diodes  
Outline  
TO-3P  
D
1
G
2
3
1. Gate  
2. Source  
(Flange)  
3. Drain  
S
2SK2220, 2SK2221  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
Drain to source voltage  
2SK2220  
2SK2221  
VDSX  
180  
V
200  
Gate to source voltage  
Drain current  
VGSS  
ID  
±20  
V
8
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
8
A
Pch*1  
Tch  
Tstg  
100  
W
°C  
°C  
Channel temperature  
150  
Storage temperature  
–55 to +150  
Note 1. Value at Tc = 25 °C  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source 2SK2220  
V(BR)DSX  
180  
200  
V
ID = 10 mA, VGS = –10 V  
breakdown  
voltage  
2SK2221  
Gate to source breakdown  
voltage  
V(BR)GSS  
VGS(off)  
VDS(sat)  
|yfs|  
±20  
0.15  
1.0  
V
V
V
S
IG = ±100 µA, VDS = 0  
Gate to source cutoff voltage  
1.45  
12  
ID = 100 mA  
V
DS = 10 V  
Drain to source saturation  
voltage  
ID = 8 A, VGD = 0 V*1  
Forward transfer admittance  
0.7  
1.4  
ID = 3 A  
V
DS = 10 V*1  
Input capacitance  
Output capacitance  
Ciss  
600  
800  
8
pF  
pF  
pF  
ns  
ns  
VGS = –5 V  
VDS = 10 V  
f = 1 MHz  
VDD = 30 V  
ID = 4 A  
Coss  
Reverse transfer capacitance Crss  
Turn-on time  
ton  
toff  
250  
90  
Turn-off time  
Note 1. Pulse Test  
2
2SK2220, 2SK2221  
Power vs. Temperature Derating  
150  
100  
50  
Maximum Safe Operation Area  
20  
10  
5
Ta = 25°C  
2
1.0  
0.5  
2SK2220 2SK2221  
0.2  
0
50  
100  
150  
5
10  
20 50  
100 200  
500  
Drain to Source Voltage VDS (V)  
Case Temperature Tc (°C)  
Typical Output Characteristics  
Typical Output Characteristics  
10  
10  
8
9
8
VGS  
10 V  
=
VGS = 10 V  
TC = 25°C  
TC = 25°C  
8
9
8
6
4
2
7
7
6
6
Pch = 125 W  
6
5
5
4
4
4
3
3
2
2
2
1
0
1
0
0
10  
20  
30  
40  
50  
0
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Drain to Source Voltage VDS (V)  
3
2SK2220, 2SK2221  
Typical Transfer Characteristics  
Typical Transfer Characteristics  
VDS = 10 V  
10  
8
1.0  
0.8  
0.6  
0.4  
0.2  
VDS = 10 V  
6
4
2
0
2
4
6
8
10  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Gate to Source Voltage VGS (V)  
Gate to Source Voltage VGS (V)  
Forward Transfer Admittance  
vs. Frequency  
Switching Time vs. Drain Current  
ton  
500  
5
1.0  
200  
100  
50  
TC = 25°C  
DS = 10 V  
ID = 2 A  
0.1  
V
toff  
0.01  
20  
10  
5
0.001  
0.0005  
0.1 0.2  
0.5 1.0  
2
5
10  
2 k  
10 k  
100 k  
1 M  
10 M 20 M  
Drain Current ID (A)  
Frequency f (Hz)  
4
2SK2220, 2SK2221  
Waveforms  
Switching Time Test Circuit  
90%  
Output  
RL  
Input  
10%  
Input  
ton  
toff  
10%  
30 V  
PW = 50 µs  
duty ratio  
= 1%  
50 Ω  
Output  
90%  
5
Unit: mm  
4.8 ± 0.2  
15.6 ± 0.3  
φ3.2 ± 0.2  
1.5  
1.6  
2.0  
1.4 Max  
2.8  
1.0 ± 0.2  
0.6 ± 0.2  
0.9  
1.0  
3.6  
5.45 ± 0.5  
5.45 ± 0.5  
Hitachi Code  
JEDEC  
TO-3P  
EIAJ  
Conforms  
Weight (reference value) 5.0 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
厂商 型号 描述 页数 下载

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