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2SK2208

型号:

2SK2208

描述:

MOSFET[ MOSFET ]

品牌:

SANKEN[ SANKEN ELECTRIC ]

页数:

1 页

PDF大小:

38 K

2SK2208  
External dimensions  
2 ...... FM100  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Conditions  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
min  
900  
max  
V
V
900  
V
V
V
V
nA  
µA  
V
I = 100µA, V = 0V  
D GS  
DSS  
GSS  
(BR) DSS  
±30  
I
I
±100  
100  
4.0  
V
GS  
V
DS  
V
DS  
V
DS  
V
GS  
= ±30V  
GSS  
DSS  
I
±5  
A
= 900V, V = 0V  
GS  
D
1
I
±20  
75 (Tc = 25ºC)  
400  
A
V
TH  
2.0  
2.0  
3.0  
3.0  
= 10V, I = 1mA  
D
D (pulse)  
*
P
D
W
mJ  
A
Re  
S
= 20V, I = 2.5A  
D
(yfs)  
2
E
R
2.5  
3.0  
= 10V, I = 2.5A  
AS  
AS  
DS (on)  
D
*
I
5
Ciss  
1000  
190  
90  
pF  
pF  
pF  
ns  
ns  
V
V
= 10V, f = 1.0MHz,  
= 0V  
DS  
Tch  
150  
ºC  
ºC  
Coss  
Crss  
GS  
Tstg  
55 to +150  
I
= 2.5A, V  
250V,  
1: P  
100µs, duty cycle 1%  
D
DD  
W
t
t
60  
on  
off  
*
2: V = 50V, L = 30mH, I = 5A, unclamped, R = 50,  
R = 100, V = 10V,  
DD  
L
G
L
GS  
*
155  
See Figure 1 on Page 5.  
See Figure 2 on Page 5.  
VDS ID Characteristics  
VGS ID Characteristics  
ID RDS (ON) Characteristics  
4
3
2
1
0
5
5
4
3
2
1
0
6V  
=
VGS 10V  
=
VDS 20V  
=
VGS 10V  
4
3
2
1
0
5.5V  
5V  
=
TC  
55ºC  
4.5V  
4V  
25ºC  
125ºC  
0
5
10  
15  
20  
0
2
4
6
8
10  
0
1
2
3
4
5
VDS (V)  
VGS (V)  
ID (A)  
I
D Re(yfs) Characteristics  
VGS VDS Characteristics  
TC RDS (ON) Characteristics  
20  
5
3
10  
8
=
TC  
55ºC  
25ºC  
=
ID 2.5A  
=
VGS 10V  
125ºC  
15  
10  
5
=
ID 5A  
6
4
2
0
1
=
ID 2.5A  
0.5  
0.3  
0
50  
0
50  
100  
150  
5
10  
20  
0.05 0.1  
0.5  
ID (A)  
1
5
VGS (V)  
Tc (ºC)  
VDS Capacitance Characteristics  
V
SD IDR Characteristics  
Safe Operating Area  
Ta PD Characteristics  
(Tc=25ºC)  
50  
5000  
5
4
3
2
1
0
75  
=
VGS 0V  
70  
60  
50  
40  
30  
20  
10  
0
ID (pulse) max  
=
f
1MHz  
10  
5
Ciss  
1000  
500  
ID max  
=
VGS 0V  
1
Coss  
Crss  
5V,10V  
0.5  
100  
50  
0.1  
Without heatsink  
0.03  
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
10  
20  
30  
40  
50  
3
5
10  
50 100  
VDS (V)  
500 1000  
0
50  
100  
150  
VDS (V)  
VSD (V)  
Ta (ºC)  
25  
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ETC

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ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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