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2SK2202

型号：

2SK2202

描述：

硅N沟道MOS FET[ Silicon N-Channel MOS FET ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

10 页

PDF大小：

50 K

下载PDF手册
2SK2202  
Silicon N-Channel MOS FET  
ADE-208-089 A  
2nd. Edition  
Application  
High speed power switching  
Features  
•
•
•
•
•
Low on-resistance  
High speed switching  
Low drive current  
4 V gate drive device can be driven from 5 V source  
Suitable for Switching regulator, DC-DC converter  
Outline  
TO-220FM  
D
1
2
3
1. Gate  
G
2. Drain  
3. Source  
S
2SK2202  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
120  
VGSS  
±20  
V
ID  
7
A
1
Drain peak current  
ID(pulse)  
*
14  
A
Body to drain diode reverse drain current  
Channel dissipation  
Channel temperature  
Storage temperature  
IDR  
7
A
Pch*2  
Tch  
20  
W
°C  
°C  
150  
Tstg  
–55 to +150  
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25 °C  
2
2SK2202  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
120  
—
—
V
ID = 10 mA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
—
—
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
—
—
1.0  
—
—
—
—
0.3  
±10  
250  
2.0  
0.4  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = 100 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 4 A  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage  
VGS(off)  
Static drain to source on state RDS(on)  
resistance  
Ω
V
GS = 10 V*1  
ID = 4 A  
GS = 4 V*1  
ID = 4 A  
DS = 10 V*1  
—
0.35  
5.0  
0.55  
—
Ω
V
Forward transfer admittance  
|yfs|  
3.0  
S
V
Input capacitance  
Output capacitance  
Ciss  
—
—
—
—
—
—
—
—
420  
140  
35  
—
—
—
—
—
—
—
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V  
VGS = 0  
Coss  
Reverse transfer capacitance Crss  
f = 1 MHz  
ID = 4 A  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
9
50  
VGS = 10 V  
RL = 7.5 Ω  
Turn-off delay time  
Fall time  
140  
65  
Body to drain diode forward  
voltage  
VDF  
1.35  
IF = 7 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
—
320  
—
ns  
IF = 7 A, VGS = 0,  
diF / dt = 50 A / µs  
Note 1. Pulse Test  
3
2SK2202  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
10 µs  
40  
30  
20  
10  
20  
10  
5
2
1
Operation in  
this area is  
limited by R  
DS(on)  
0.5  
0.2  
0.1  
Ta = 25 °C  
10  
Drain to Source Voltage  
0
50  
100  
150  
200  
2
5
20  
50 100 200  
(V)  
V
DS  
Case Temperature Tc (°C)  
Typical Output Characteristics  
Typical Transfer Characteristics  
10  
8
10  
8
10 V  
6 V  
Pulse Test  
4 V  
V
= 10 V  
DS  
Pulse Test  
3.5 V  
6
6
3 V  
4
4
Tc = –25 °C  
25 °C  
2
V
GS  
= 2.5 V  
2
75 °C  
0
2
4
6
8
10  
0
1
2
3
4
5
Drain to Source Voltage  
V
(V)  
DS  
Gate to Source Voltage  
V
(V)  
GS  
4
2SK2202  
Static Drain to Source State Resistance  
vs. Drain Current  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
5
2.0  
1.6  
1.2  
0.8  
0.4  
Pulse Test  
Pulse Test  
I
= 5 A  
D
2
1
0.5  
V
= 4 V  
10 V  
GS  
2 A  
1 A  
0.2  
0.1  
0.1 0.2  
0.5  
1
2
5
10 20  
0
4
8
12  
16  
20  
Gate to Source Voltage  
V
(V)  
Drain Current  
I
(A)  
D
GS  
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
10  
5
1.0  
V
= 10 V  
DS  
Pulse Test  
Pulse Test  
0.8  
0.6  
0.4  
0.2  
Tc = 75 °C  
25 °C  
I
= 5 A  
D
2
1
2 A  
1 A  
–25 °C  
5 A  
1, 2 A  
V
= 4 V  
10 V  
GS  
0.5  
0.2  
0.1  
0
–40  
0.1 0.2  
0.5  
1
2
5
10  
0
40  
80  
120  
160  
Drain Current I (A)  
Case Temperature Tc (°C)  
D
5
2SK2202  
Typical Capacitance vs.  
Drain to Source Voltage  
Body–Drain Diode Reverse  
Recovery Time  
2000  
1000  
1000  
500  
V
GS  
= 0  
f = 1 MHz  
500  
Ciss  
200  
100  
200  
100  
Coss  
50  
50  
Crss  
30  
20  
10  
di / dt = 50 A / µs, V = 0  
GS  
Ta = 25 °C, Pulse Test  
20  
10  
0
10  
20  
40  
50  
0.1 0.2  
0.5  
1
2
5
10  
Reverse Drain Current  
I
(A)  
Drain to Source Voltage V  
(V)  
DR  
DS  
Switching Characteristics  
Dynamic Input Characteristics  
500  
200  
160  
120  
80  
20  
16  
12  
8
V
GS  
200  
100  
t
d(off)  
I
= 7 A  
D
t
t
f
50  
V
DS  
V
= 100 V  
50 V  
DD  
V
V
= 10 V  
= 30 V  
GS  
DD  
r
25 V  
20  
10  
PW = 2 µs  
duty < 1 %  
V
= 100 V  
50 V  
DD  
t
40  
4
0
d(on)  
2
5
3
25 V  
0.1 0.2  
0.5  
1
5
10  
0
8
16  
24  
32  
40  
Drain Current  
I
(A)  
Gate Charge Qg (nc)  
D
6
2SK2202  
Reverse Drain Current vs.  
Source to Drain Voltage  
10  
8
Pulse Test  
6
4
5 V  
10 V  
V
= 0, –5 V  
1.6  
GS  
2
0
0.4  
0.8  
1.2  
2.0  
(V)  
Source to Drain Voltage  
V
SD  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 6.25 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
7
2SK2202  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
90%  
D.U.T.  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
50Ω  
= 30 V  
90%  
td(off)  
td(on)  
t
f
tr  
8
Unit: mm  
10.0 ± 0.3  
7.0 ± 0.3  
2.8 ± 0.2  
2.5 ± 0.2  
φ 3.2 ± 0.2  
1.2 ± 0.2  
1.4 ± 0.2  
4.45 ± 0.3  
2.5  
0.7 ± 0.1  
2.54 ± 0.5  
2.54 ± 0.5  
0.5 ± 0.1  
Hitachi Code  
JEDEC  
TO-220FM  
—
EIAJ  
Conforms  
Weight (reference value) 1.8 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
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