VX-2 Series Power MOSFET
2SK2177 ( F1E50VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
500
V
μA
IDSS
IGSS
gfs
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 0.5A, VDS = 10V
250
±0.1
0.3
2.5
0.7
5.8
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 0.5A, VGS = 10V
7.0
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forwade Voltage
Theｒmal Resistance
VTH
VSD
ID = 0.3mA, VDS = 10V
IS = 0.5A, VGS = 0V
θjc junction to case
12.5 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VGS = 10V, ID = 1A
6
140
13
45
35
60
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 0.5A, VGS = 10V, RL = 300Ω
pF
70
100
ns
Turn-Off Time
toff
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
