SMD Type
MOSFET
MOS Field Effect Transistor
2SK680A
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
Features
+0.1
1.80
-0.1
Directly driven by Ics having a 5V power source.
Not necessary to consider driving current because of
its high input impeance.
3
0.53
2
1
+0.1
0.48
-0.1
+0.1
-0.1
+0.1
0.44
-0.1
Has low on-state resistance
RDS(on)=1.0ÙMAX. @VGS=4.0V,ID=0.5A
RDS(on)=0.70ÙMAX. @VGS=10V,ID=0.5A
1 Gate
1. Source
1. Base
+0.1
3.00
-0.1
2 Drain
2. Drain
2. Collector
3 Source
3. Emiitter
3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
20
Gate to source voltage
V
A
1.0
Drain current
Idp *
PD
A
2.0
Power dissipation
2.0
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
1.6
Max
10
Unit
A
VDS=30V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=0.5A
VGS=4V,ID=0.5A
VGS=10V,ID=0.5A
Gate leakage current
Gate cut off voltage
10
A
1.0
0.4
2.5
V
Forward transfer admittance
S
RDS(on)
RDS(on)
Ciss
0.6
0.4
130
70
1.0
0.7
Ù
Drain to source on-state resistance
Ù
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
pF
pF
ns
ns
ns
ns
Coss
VDS=5.0V,VGS=0,f=1MHZ
Crss
ton
30
12
tr
44
ID=0.5A,VGS(on)=10V,RG=10
,VDD=25V,RL=50Ù
Turn-off delay time
Fall time
toff
310
160
tf
1
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