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2SK4198FS_10

型号：

2SK4198FS_10

描述：

通用开关设备的应用[ General-Purpose Switching Device Applications ]

品牌：

SANYO[ SANYO SEMICON DEVICE ]

页数：

5 页

PDF大小：

268 K

下载PDF手册
Ordering number : ENA1370B  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK4198FS  
Features  
•
ON-resistance R (on)=1.8 (typ.)  
Ω
DS  
•
•
•
Input capacitance Ciss=360pF (typ.)  
10V drive  
Repetitive avalanche guarantee  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
600  
±30  
5
DSS  
V
V
GSS  
*1  
I
Limited only by maximum temperature Tch=150 C  
A
°
Dc  
Drain Current (DC)  
I
*2  
Tc=25 C (SANYO s ideal heat dissipation condition)*3  
4
A
°
’
Dpack  
Drain Current (Pulse)  
Allowable Power Dissipation  
I
PW 10 s, duty cycle 1%  
18  
A
≤
μ
≤
DP  
2.0  
30  
W
W
P
D
Tc=25 C (SANYO s ideal heat dissipation condition)*3  
°
’
Channel Temperature  
Tch  
150  
C
C
°
°
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *4  
Avalanche Current *5  
E
55  
4.5  
3
mJ  
A
AS  
I
AV  
Avalanche Energy (Repetition)  
E
Limited only by maximum temperature Tch=150 C  
mJ  
°
AR  
Note : 1 Shows chip capability.  
*
2 Package limited.  
*
3 SANYO’s condition is radiation from backside.  
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.  
4 V =50V, L=5mH, I =4.5A  
*
DD  
AV  
5 L 5mH, Single pulse  
*
≤
Marking : K4198FS  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
http://semicon.sanyo.com/en/network  
No. A1370-1/5  
70710 TK IM TC-00002401 / 31010 TK IM TC-00002278 / N2608QB MS IM TC-00001732  
2SK4198FS  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
600  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=10mA, V =0V  
(BR)DSS  
D GS  
I
V
=480V, V =0V  
100  
A
μ
DSS  
DS  
GS  
I
V
=±30V, V =0V  
±100  
5
nA  
V
GSS  
(off)  
GS DS  
V
V
=10V, I =1mA  
3
GS  
| yfs |  
(on)  
DS  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
V
=10V, I =2.5A  
D
1.2  
2.4  
S
DS  
R
I
=2.5A, V =10V  
1.8  
360  
69  
2.34  
Ω
DS  
D GS  
Ciss  
Coss  
Crss  
V
=30V, f=1MHz  
=30V, f=1MHz  
=30V, f=1MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
Output Capacitance  
V
DS  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
V
15  
DS  
t
t
t
t
(on)  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
13  
d
r
Rise Time  
28  
Turn-OFF Delay Time  
(off)  
39  
d
f
Fall Time  
15  
Total Gate Charge  
Qg  
V
=200V, V =10V, I =5A  
GS  
14.3  
3.0  
8.2  
0.9  
DS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=200V, V =10V, I =5A  
GS  
DS  
D
V
=200V, V =10V, I =5A  
GS  
DS  
D
V
I =5A, V =0V  
S GS  
1.2  
SD  
Package Dimensions  
unit : mm (typ)  
7528-001  
4.7  
10.16  
3.18  
2.54  
2.76  
1.47 MAX  
0.8  
1
2
3
0.5  
1 : Gate  
2 : Drain  
3 : Source  
2.54  
2.54  
SANYO : TO-220F-3FS  
Switching Time Test Circuit  
Avalanche Resistance Test Circuit  
V =200V  
DD  
PW=10μs  
D.C.≤0.5%  
L
I
=2.5A  
D
≥50Ω  
RG  
R =80Ω  
L
V
OUT  
V
GS  
=10V  
D
2SK4198FS  
10V  
0V  
V
DD  
50Ω  
G
S
P. G  
R
=50Ω  
GS  
2SK4198FS  
No. A1370-2/5  
2SK4198FS  
I
D
-- V  
DS  
I
-- V  
D GS  
14  
12  
10  
8
12  
10  
8
Tc=25°C  
V
=20V  
DS  
8V  
6
6
4
4
2
0
2
0
6V  
=5V  
V
25  
GS  
0
5
10  
15  
20  
30  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Drain-to-Source Voltage, V  
DS  
-- V  
IT13521  
Gate-to-Source Voltage, V  
-- V  
IT13522  
GS  
R
(on) -- V  
R
(on) -- Tc  
DS  
DS  
GS  
6
5
4
3
2
6
5
4
3
2
I
=2.5A  
D
Tc=75°C  
25°C  
--25°C  
1
0
1
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate-to-Source Voltage, V  
-- V  
IT13523  
Case Temperature, Tc -- °C  
IT13524  
GS  
I
S
-- V  
SD  
| yfs | -- I  
D
7
5
3
2
V
=20V  
V
=0V  
GS  
DS  
10  
7
5
3
2
3
2
1.0  
7
5
1.0  
7
5
3
2
0.1  
7
5
3
2
3
2
0.1  
0.1  
0.01  
0.2  
2
3
5
7
2
3
5
7
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT13526  
1.0  
10  
Drain Current, I -- A  
IT13525  
Diode Forward Voltage, V  
SD  
-- V  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
DS  
D
5
2
f=1MHz  
V
V
=200V  
=10V  
DD  
GS  
1000  
3
2
7
5
Ciss  
3
2
100  
7
5
100  
7
5
3
2
3
2
t (on)  
d
10  
10  
7
0.1  
7
0
10  
20  
30  
40  
50  
IT13528  
2
3
5
7
2
3
5
7
1.0  
10  
Drain Current, I -- A  
IT13527  
Drain-to-Source Voltage, V  
DS  
-- V  
D
No. A1370-3/5  
2SK4198FS  
V
GS  
-- Qg  
A S O  
5
10  
9
V
=200V  
3
2
DS  
=5A  
I
I
=18A  
PW≤10μs  
DP  
I
D
10  
7
5
8
=5A  
Dc  
7
3
2
I
=4A  
Dpack  
6
1.0  
7
5
5
3
2
4
Operation in  
this area is  
3
0.1  
7
5
limited by R (on).  
DS  
2
3
2
1
0
Tc=25°C  
Single pulse  
0.01  
0.1  
0
0
0
2
4
6
8
10  
12  
14  
16  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
1.0  
10  
100  
1000  
IT14229  
IT13529  
Drain-to-Source Voltage, V  
DS  
-- V  
Total Gate Charge, Qg -- nC  
P
-- Ta  
P
-- Tc  
D
D
35  
30  
25  
20  
15  
10  
2.5  
2.0  
1.5  
1.0  
0.5  
0
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT13531  
IT13532  
Case Temperature, Tc -- °C  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
Ambient Temperature, Ta -- °C  
No. A1370-4/5  
2SK4198FS  
Note on usage : Since the 2SK4198FS is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of July, 2010. Specifications and information herein are subject  
to change without notice.  
PS No. A1370-5/5  
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