2SK3696-01MR
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
TO-220F
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Ratings
Unit
Remarks
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
VDS
ID
500
±13
±52
±30
13
A
A
V
A
ID(puls]
VGS
IAS
<
Tch 150°C
=
Maximum avalanche current
Non-Repetitive
EAS
202
mJ
*1
Equivalent circuit schematic
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Peak diode recovery -di/dt
Max. power dissipation
<
dVDS/dt
dV/dt
-di/dt
PD
20
5
kV/s
kV/µs
A/µs
W
VDS 500V
=
*2
Drain(D)
100
*3
2.16
Ta=25°C
Tc=25°C
70
+150
Gate(G)
Operating and storage
temperature range
Isolation voltage
Tch
°C
Tstg
VISO
-55 to +150
2
°C
Source(S)
t=60sec f=60Hz
kVrms
*1 L=2.20mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph
*2 IF -ID, -di/dt=100A/µs, VCC BVDSS, Tch 150°C
<
<
<
=
=
=
*3 IF -ID, dV/dt=5kV/µs, VCC BVDSS, Tch 150°C
<
<
<
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
V(BR)DSS
VGS(th)
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
V
500
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
mA
nA
VDS=500V VGS=0V
10
Zero gate voltage drain current
IDSS
Tch=125°C
VDS=400V VGS=0V
VGS=±30V VDS=0V
1.0
10
0.42
2
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
IGSS
RDS(on)
gfs
100
ID=6.5A VGS=10V
Ω
0.55
S
ID=6.5A VDS=25V
VDS=25V
5.5
11
1100
165
9
Ciss
Coss
Crss
td(on)
tr
pF
1650
250
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
13.5
ns
VCC=300V ID=6.5A
23
35
11
71
12
42
15
14
VGS=10V
6.5
47
7.5
Turn-off time toff
td(off)
tf
RGS=10 Ω
VCC=250V
ID=13A
nC
Total Gate Charge
QG
28
10
9
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
IAV
VGS=10V
L=2.20mH Tch=25°C
A
13
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs
Tch=25°C
1.05
120
0.5
1.60
250
1.2
V
VSD
ns
µC
trr
Qrr
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.79
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
