找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3618

型号:

2SK3618

描述:

通用开关设备的应用[ General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

42 K

Ordering number : ENN8325  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3618  
Features  
Low ON-resistance.  
Ultrahigh-speed switching.  
4V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
100  
±20  
8
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
32  
1
A
DP  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
20  
150  
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
100  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Gate-to-Source Cutoff Voltage  
Forward Transfer Admittance  
V
I
=1mA, V =0V  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=100V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
±10  
V (off)  
GS  
=10V, I =1mA  
1.2  
4
2.6  
D
yfs  
=10V, I =4A  
7
S
D
R
(on)1  
I
I
=4A, V =10V  
GS  
100  
130  
880  
80  
130  
180  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=4A, V =4V  
D GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
55  
t (on)  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
11.5  
14  
d
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
100  
42  
d
t
f
Marking : K3618  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62005PA MS IM TB-00001380 No.8325-1/4  
2SK3618  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
=50V, V =10V, I =8A  
24  
nC  
nC  
nC  
V
DS  
DS  
DS  
GS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
=50V, V =10V, I =8A  
3.2  
GS  
D
=50V, V =10V, I =8A  
GS  
5.5  
D
V
SD  
I =8A, V =0V  
S GS  
0.9  
1.2  
Note) Although the protection diode is contained between gate and source, be careful of handling enough.  
Package Dimensions  
unit : mm  
Package Dimensions  
unit : mm  
7518-004  
7003-004  
2.3  
6.5  
5.0  
6.5  
5.0  
4
2.3  
0.5  
0.5  
4
0.85  
0.7  
0.5  
0.85  
1.2  
1
2
3
0.6  
0 to 0.2  
1.2  
0.6  
0.5  
1 : Gate  
1 : Gate  
2 : Drain  
3 : Source  
4 : Drain  
2 : Drain  
3 : Source  
4 : Drain  
1
2
3
2.3 2.3  
2.3 2.3  
SANYO : TP-FA  
SANYO : TP  
Switching Time Test Circuit  
V
=50V  
DD  
V
IN  
10V  
0V  
I
=4A  
D
R =12.5Ω  
L
V
D
V
OUT  
IN  
PW=10µs  
D.C.1%  
G
P. G  
50Ω  
2SK3618  
S
I
-- V  
I
-- V  
GS  
D
DS  
D
20  
18  
16  
14  
12  
10  
25  
V
=10V  
DS  
20  
15  
10  
8
6
4
V
=3V  
GS  
5
0
2
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
IT07979  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
Drain-to-Source Voltage, V  
DS  
-- V  
Gate-to-Source Voltage, V -- V  
GS  
IT07022  
No.8325-2/4  
2SK3618  
R
DS  
(on) -- V  
R
DS  
(on) -- Tc  
GS  
180  
160  
140  
120  
300  
250  
200  
150  
100  
Tc=25°C  
I =4A  
D
100  
80  
50  
0
2
3
4
5
6
7
8
9
10  
IT07980  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate-to-Source Voltage, V  
-- V  
Case Temperature, Tc -- °C  
IT07981  
GS  
yfs -- I  
I
-- V  
S SD  
D
5
5
V
=10V  
V
=0V  
DS  
GS  
3
2
3
2
10  
7
5
3
2
10  
7
1.0  
7
5
5
3
2
3
2
0.1  
7
5
3
2
0.01  
1.0  
2
3
5
7
2
3
5
7
2
3
0
0.3  
0.6  
0.9  
1.2  
1.5  
1.0  
10  
Diode Forward Voltage, V  
-- V  
Drain Current, I -- A  
D
IT07026  
IT07027  
SD  
Ciss, Coss, Crss -- V  
SW Time -- I  
DS  
D
3
2
3
2
f=1MHz  
V
=50V  
=10V  
DD  
V
GS  
Ciss  
1000  
100  
7
5
7
5
3
2
3
2
t (on)  
d
100  
10  
7
5
7
5
3
2
3
0.1  
0
5
10  
15  
20  
25  
30  
2
3
5
7
2
3
5
7
2
3
5
1.0  
10  
Drain-to-Source Voltage, V  
-- V  
Drain Current, I -- A  
IT07029  
IT07028  
DS  
D
V
-- Qg  
A S O  
GS  
10  
5
<10µs  
V
=50V  
DS  
3
2
I =32A  
DP  
9
8
7
6
5
4
3
2
I =8A  
D
I =8A  
10  
7
5
D
3
2
1.0  
7
5
3
2
Operation in this area  
is limited by R (on).  
DS  
0.1  
7
5
3
2
1
0
Tc=25  
°C  
Single pulse  
0.01  
0.01  
0
5
10  
15  
20  
25  
IT07982  
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
5 7  
100  
2
0.1  
1.0  
10  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
-- V  
IT07983  
DS  
No.8325-3/4  
2SK3618  
P
-- Ta  
P
-- Tc  
D
D
1.25  
1.00  
0.75  
0.50  
25  
20  
15  
10  
0.25  
0
5
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT07984  
Case Temperature, Tc -- °C  
IT07033  
Note on usage : Since the 2SK3618 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer’s  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer’s products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of June, 2005. Specifications and information herein are subject  
to change without notice.  
PS No.8325-4/4  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.175550s