SMD Type
MOSFET
MOS Field Effect Transistor
2SK3111
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 180m MAX. (VGS = 10 V, ID = 10A)
Low input capacitance
+0.1
-0.1
0.1max
1.27
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
Built-in gate protection diode
2 Drain
3 Source
Surface mount device available
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
200
Gate to source voltage
V
30
A
20
Drain current
Idp *
A
60
62
Power dissipation
TC=25
TA=25
PD
W
1.5
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
VDS=200V,VGS=0
Min
Typ
Max
100
10
Unit
A
IDSS
IGSS
VGS(off)
Yfs
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=10A
VGS=10V,ID=10A
A
2.5
3.0
4.5
V
S
RDS(on)
Ciss
Coss
Crss
ton
120
1000
300
150
25
180
m
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
90
ID=10A,VGS(on)=10V,VDD=100V,RG=10
Turn-off delay time
toff
80
Fall time
tf
40
1
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