SMD Type
MOSFET
MOS Field Effect Transistor
2SK3109
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
Gate voltage rating 30 V
Low on-state resistance
+0.1
1.27
-0.1
RDS(on) = 0.4
MAX. (VGS = 10 V, ID = 5.0 A)
Low input capacitance
+0.1
1.27
-0.1
0.1max
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
+0.1
0.81
-0.1
2.54
Built-in gate protection diode
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Surface mount device available
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
200
30
Unit
V
Gate to source voltage
V
A
10
Drain current
Idp *
A
30
50
Power dissipation
TC=25
TA=25
PD
W
1.5
150
Channel temperature
Storage temperature
Tch
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
VDS=200V,VGS=0
Min
Typ
Max
100
10
Unit
A
IDSS
IGSS
VGS(off)
Yfs
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5.0A
VGS=10V,ID=5.0A
A
2.5
1.5
4.5
V
S
RDS(on)
Ciss
Coss
Crss
ton
0.32
400
110
55
0.4
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
12
Rise time
tr
34
ID=5.0A,VGS(on)=10V,VDD=100V,RG=10
Turn-off delay time
toff
40
Fall time
tf
20
1
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