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2SK2803_05

型号:

2SK2803_05

描述:

MOSFET[ MOSFET ]

品牌:

SANKEN[ SANKEN ELECTRIC ]

页数:

2 页

PDF大小:

46 K

2SK2803  
Absolute Maximum Ratings  
External dimensions  
1 ...... FM20  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
450  
max  
V
V
nA  
µA  
V
ID = 100µA, VGS = 0V  
VGS = ±30V  
(BR) DSS  
VDSS  
VGSS  
ID  
450  
V
V
IGSS  
±100  
100  
4.0  
±30  
IDSS  
VDS = 450V, VGS = 0V  
VDS = 10V, ID = 1mA  
VDS = 20V, ID = 1.5A  
VGS = 10V, ID = 1.5A  
±3  
A
VTH  
2.0  
1.5  
1
ID (pulse)  
±12  
A
*
Re (yfs)  
RDS (on)  
Ciss  
2.1  
2.1  
340  
75  
S
2.8  
PD  
30 (Tc = 25ºC)  
W
mJ  
A
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
2
EAS  
IAS  
30  
*
VDS = 10V, f = 1.0MHz,  
VGS = 0V  
Coss  
Crss  
td (on)  
tr  
3
150  
26  
Tch  
Tstg  
ºC  
ºC  
18  
ID = 1.5A, VDD 200V,  
RL = 133, VGS = 10V,  
See Figure 2 on Page 5.  
30  
55 to +150  
td (off)  
tf  
45  
1: P  
100µs, duty cycle 1%  
W
*
85  
2: V = 30V, L = 6.3mH, I = 3.0A, unclamped, R = 50,  
DD  
L
G
*
See Figure 1 on Page 5.  
VSD  
0.9  
1.4  
ISD = 3A, VGS = 0V  
ID VDS Characteristics (typical)  
I
D VGS Characteristics (typical)  
RDS (ON) ID Characteristics (typical)  
3.0  
3.0  
4
VDS =20V  
10V  
6V  
VGS =10V  
5.5V  
3
2
1
2.0  
2.0  
5V  
TC =125°C  
1.0  
0
1.0  
25°C  
4.5V  
55°C  
V
GS = 4V  
0
0
1
2
3
0
5
10  
15  
20  
0
2
4
6
8
0
VGS (V)  
ID (A)  
VDS (V)  
Re (yfs) ID Characteristics (typical)  
VDS VGS Characteristics (typical)  
RDS (ON) TC Characteristics (typical)  
10  
5
5
VDS = 20V  
ID =1.5A  
VGS =10V  
8
4
3
2
1
0
ID =3A  
TC = 55°C  
25°C  
6
125°C  
1
4
ID =1.5A  
2
0
0.5  
0.3  
150  
0.05 0.1  
0.5  
ID (A)  
1.0  
3.0  
50  
0
50  
100  
3
5
10  
20  
VGS (V)  
Tc (ºC)  
Capacitance VDS Characteristics (typical)  
IDR VSD Characteristics (typical)  
Safe Operating Area  
P
D Ta Characteristics  
(TC = 25°C)  
1000  
3
20  
VGS = 0V  
30  
10  
f =1MHz  
ID (pulse)max  
500  
5
Ciss  
ID max  
2
20  
10  
1
100  
VGS = 0V  
0.5  
50  
Coss  
1
0
5V,10V  
0.1  
Crss  
40  
Without heatsink  
0
0.05  
0.03  
10  
0
0
0.5  
1.0  
1.5  
10  
20  
30  
50  
3
5
10  
50 100  
VDS (V)  
500  
0
50  
100  
Ta (ºC)  
150  
VDS (V)  
VSD (V)  
39  
External dimensions (Unit: mm)  
1 FM20 (TO-220F)  
UL approved product  
General product  
4.2±0.2  
2.8  
φ
3.3  
10.0±0.2  
4.2±0.2  
2.8  
φ
10.0±0.2  
±0.2  
±0.2  
3.3  
C 0.5  
C 0.5  
a
b
a
b
1.35±0.15  
1.35±0.15  
0.85+00..12  
1.35 ±0.15  
1.35 ±0.15  
+0.2  
0.1  
0.85  
+0.2  
+0.2  
0.1  
2.4±0.2  
2.54 0.45 0.1  
2.54  
2.54  
0.45  
2.4±0.2  
2.54  
2.2 ±0.2  
2.2 ±0.2  
G
D
S
G
D S  
a: Part Number  
b: Lot Number  
Weight: Approx 2.0g  
2
FM100 (TO-3PF)  
UL approved product  
General product  
5.5±0.2  
±0.1  
5.5 ±0.2  
15.6 ±0.2  
±0.2  
15.6 ±0.2  
φ
3.3  
φ
3.3  
3.45±0.2  
3.45 ±0.2  
a
a
b
b
1.75 ±0.15  
1.75 ±0.15  
0.8  
0.8  
2.15 ±0.15  
2.15 ±0.15  
+0.2  
+0.2  
0.1  
1.05  
0.1  
1.05  
+0.2  
0.1  
0.65  
+0.2  
5.45 ±0.1  
5.45 ±0.1 0.65  
0.1  
3.35 ±0.2  
5.45 ±0.1  
5.45 ±0.1  
3.35 ±0.2  
1.5 4.4 1.5  
1.5 4.4 1.5  
G
D
S
G
D
S
a: Part Number  
b: Lot Number  
Weight: Approx 6.5g  
3
厂商 型号 描述 页数 下载

PANASONIC

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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