FUJI POWER MOSFET
2SK2690-01
FAP-IIIB Series
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-3P
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Drain(D)
Item
Symbol
VDS
Ratings
60
Unit
V
Drain-source voltage
A
A
Continuous drain current
Pulsed drain current
ID
±80
±320
Gate(G)
ID p
VGS
Source(S)
V
Gate-source voltage
±20
mJ
W
°C
°C
Maximum avalanche energy
Maximum power dissipation
Operating and storage
Temperature range
EAV
PD
*1
599
125
Tch
Tstg
+150
-55 to +150
*1 L=0.125mH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
BVDSS
VGS(th)
IDSS
ID= 1mA
ID= 1mA
VGS=0V
Drain-source breakdown voltage
Gate threshold voltage
V
60
VDS=VGS
V
1.0
1.5
10
0.2
2.0
500
1.0
100
Tch=25°C
µA
mA
nA
mΩ
VDS=60V VGS=0V
Zero gate voltage drain current
Tch=125°C
VDS=0V
Gate-source leakage current
IGSS
VGS=±20V
10
12
VGS=4V
Drain-source on-state resistance
RDS(on)
17
10
ID=40A
VGS=10V
7.5
55.0
3500
ID=40A VDS=25V
S
Forward transcondutance
Input capacitance
gfs
25.0
Ciss
5250
1870
540
23
pF
VDS=25V
VGS=0V
f=1MHz
Output capacitance
Coss
Crss
td(on)
tr
1250
360
15
Reverse transfer capacitance
Turn-on time ton
ns
VCC=30V ID=75A
VGS=10V
75
120
285
165
Turn-off time toff
190
110
td(off)
tf
RGS=10 Ω
µ
Avalanche capability
L=100 H Tch=25°C
80
A
IAV
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=160A VGS=0V Tch=25°C
IF=80A VGS=0V
-di/dt=100A/µs
Tch=25°C
1.15
75
0.17
1.65
120
V
VSD
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Symbol
Test Conditions
Min.
Typ.
Max. Units
1.00
°C/W
Rth(ch-c)
channel to case
Thermal resistance
35.0
°C/W
Rth(ch-a)
channel to ambient
http://www.fujielectric.co.jp/fdt/scd/
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