SMD Type
Diodes
Silicon Epitaxial Planar Diode
1SV310
SOD-323
Unit: mm
+0.1
1.7
-0.1
+0.05
0.85
-0.05
Features
+0.1
2.6
-0.1
High Capacitance Ratio:C1V/C4V=2.1(Typ.)
Low Series Resistance:rs=0.28 (Typ.)
1.0max
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Value
10
Unit
V
Junction Temperature
Storage Temperature Range
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Conditions
Min
10
Typ
Max
Unit
V
IR = 1
A
Reverse Current
Capacitance
IR
VR = 10 V
3
nA
C1V
f = 1 MHz;VR = 1 V
f = 1 MHz;VR = 4 V
9.7
4.45
1.8
11.1
5.45
pF
C4V
Capacitance Ratio
Series Resistance
C1V/C4V
rs
2.1
VR = 1V, f = 470 MHz
0.28
0.4
Marking
Marking
V1
1
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