1SV121
400V
1.0A
SILICON EPITAXIAL PLANAR PIN DIODE
FEATURES
• Low capacitance.(C=0.7pF max)
• Small glass package (MHD) enables easy
mounting and high reliability.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
V
100
100
250
175
V
R
Forward current
I
mA
mW
°C
F
Power dissipation
Junction temperature
Storage temperature
P
d
T
T
j
-65 to +17
°C
stg
Electrical Characteristics (Ta = 25°C)
Ite
Symbol Min
Typ
—
Max
Unit
Test Condition
Forward voltage
Reverse current
Capacitance
V
—
—
1.1
V
I = 50 mA
F
F
I
—
100
nA
V = 30 V
R
R
C
—
—
—
—
0.7
—
pF
KΩ
Ω
V = 50 V, f = 1 MHz
R
r
r
1.0
—
I = 10 µA, f = 100 MHz
F
f1
f2
Forward resistance
10
I = 10 mA, f = 100 MHz
F
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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