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5N50G-TF3-T

型号：

5N50G-TF3-T

描述：

5A ， 500V N沟道功率MOSFET[ 5A, 500V N-CHANNEL POWER MOSFET ]

品牌：

UTC[ Unisonic Technologies ]

页数：

6 页

PDF大小：

197 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
5N50  
Preliminary  
Power MOSFET  
5A, 500V N-CHANNEL  
POWER MOSFET  
1
„
DESCRIPTION  
TO-220F  
TO-262  
The UTC 5N50 is an N-channel power MOSFET adopting  
UTC’s advanced technology to provide customers with DMOS,  
planar stripe technology. This technology is designed to meet the  
requirements of the minimum on-state resistance and perfect  
switching performance. It also can withstand high energy pulse in  
the avalanche and communication mode.  
1
The UTC 5N50 can be used in applications, such as active  
power factor correction, high efficiency switched mode power  
supplies, electronic lamp ballasts based on half bridge topology.  
1
„
FEATURES  
TO-252  
* RDS(ON) = 1.4Ω @VGS = 10 V  
* 100% avalanche tested  
* High switching speed  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
5N50L-TF3-T  
5N50L-TN3-R  
5N50L-T2Q-T  
5N50G-TF3-T  
5N50G-TN3-R  
5N50G-T2Q-T  
TO-220F  
TO-252  
TO-262  
G
G
G
S
S
S
Tube  
Tape Reel  
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 6  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-476.e  
5N50  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
500  
±30  
5
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
Continuous  
A
Drain Current  
Pulsed (Note 2)  
IDM  
20  
A
Avalanche Current (Note 2)  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
Peak Diode Recovery dv/dt (Note 4)  
TO-220F  
IAR  
5
A
EAS  
300  
7.3  
mJ  
mJ  
V/ns  
W
Avalanche Energy  
EAR  
dv/dt  
4.5  
38  
Power Dissipation  
TO-252  
TO-262  
PD  
54  
W
125  
+150  
-55~+150  
W
Junction Temperature  
Storage Temperature  
TJ  
°C  
°C  
TSTG  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature  
3. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C  
4.  
I
SD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
110  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
TO-220F  
TO-252  
TO-262  
TO-220F  
TO-252  
TO-262  
Junction to Ambient  
Junction to Case  
θJA  
62.5  
3.25  
2.13  
1
θJC  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R502-476.e  
www.unisonic.com.tw  
5N50  
Preliminary  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
BVDSS  
ID=250µA, VGS=0V  
500  
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA  
0.5  
V/°C  
V
DS=500V, VGS=0V  
VDS=400V, TC=125°C  
GS=30V, VDS=0V  
1
Drain-Source Leakage Current  
Gate- Source Leakage Current  
IDSS  
IGSS  
µA  
10  
Forward  
Reverse  
V
100 nA  
-100 nA  
VGS=-30V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=10V, ID=2.5A  
2.0  
4.0  
1.2 1.4  
V
Static Drain-Source On-State Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
Ω
CISS  
COSS  
CRSS  
480 625 pF  
80 105 pF  
VGS=0V, VDS=25V,  
f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
15  
20  
pF  
QG  
QGS  
QGD  
tD(ON)  
tR  
18  
2.2  
9.7  
12  
24  
nC  
nC  
nC  
ns  
VGS=10V, VDS=400V,  
ID=5A (Note 1, 2)  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
35  
46 100 ns  
50 110 ns  
48 105 ns  
VDD=250V, ID=5A,  
RG=25Ω (Note 1, 2)  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Continuous Drain-Source Diode  
Forward Current  
IS  
5
A
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
20  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
VSD  
trr  
IS=5A, VGS=0V  
1.4  
V
263  
1.9  
ns  
µC  
IS=5A, VGS=0V,  
dIF/dt=100A/µs (Note 1)  
Reverse Recovery Charge  
QRR  
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R502-476.e  
www.unisonic.com.tw  
5N50  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
VGS  
Same Type  
as DUT  
QG  
12V  
10V  
200nF  
VDS  
QGS  
QGD  
50kΩ  
300nF  
VGS  
DUT  
3mA  
Charge  
Gate Charge Waveforms  
Gate Charge Test Circuit  
Resistive Switching Test Circuit  
Resistive Switching Waveforms  
1
2
BVDSS  
BVDSS-VDD  
VDS  
2
EAS  
=
LIAS  
BVDSS  
IAS  
RG  
ID  
L
10V  
ID(t)  
DUT  
tP  
VDD  
VDD  
V
DS(t)  
Time  
tP  
Unclamped Inductive Switching Waveforms  
Unclamped Inductive Switching Test Circuit  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R502-476.e  
www.unisonic.com.tw  
5N50  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS(Cont.)  
+
DUT  
VDS  
RG  
L
-
ISD  
VGS  
VDD  
Driver  
Same Type  
as DUT  
dv/dt controlled by RG  
ISD controlled by pulse period  
Peak Diode Recovery dv/dt Test Circuit & Waveforms  
Gate Pulse Width  
D=  
VGS  
Gate Pulse Period  
10V  
(Driver)  
I
FM, Body Diode Forward Current  
ISD  
di/dt  
(DUT)  
IRM  
Body Diode Reverse Current  
VDS  
(DUT)  
Body Diode Recovery dv/dt  
VSD  
VDD  
Body Diode Forward  
Voltage Drop  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R502-476.e  
www.unisonic.com.tw  
5N50  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R502-476.e  
www.unisonic.com.tw  
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