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5N50G-TA3-T

型号:

5N50G-TA3-T

品牌:

UTC[ Unisonic Technologies ]

页数:

7 页

PDF大小:

258 K

UNISONIC TECHNOLOGIES CO., LTD  
5N50-P  
Power MOSFET  
5A, 500V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 5N50-P is an N-channel power MOSFET adopting  
UTC’s advanced technology to provide customers with DMOS,  
planar stripe technology. This technology is designed to meet the  
requirements of the minimum on-state resistance and perfect  
switching performance. It also can withstand high energy pulse in  
the avalanche and communication mode.  
The UTC 5N50-P can be used in applications, such as active  
power factor correction, high efficiency switched mode power  
supplies, electronic lamp ballasts based on half bridge topology.  
FEATURES  
* RDS(ON) < 1.6@VGS = 10 V, ID = 2.5 A  
* 100% avalanche tested  
* High switching speed  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
S
S
S
S
S
S
5N50L-TA3-T  
5N50L-TF3-T  
5N50L-TF1-T  
5N50L-TF2-T  
5N50L-TM3-R  
5N50L-TN3-R  
5N50G-TA3-T  
5N50G-TF3-T  
5N50G-TF1-T  
5N50G-TF2-T  
5N50G-TM3-R  
5N50G-TN3-R  
TO-220  
TO-220F  
TO-220F1  
TO-220F2  
TO-251  
G
G
G
G
G
G
D
D
D
D
D
D
Tube  
Tube  
Tube  
Tube  
Tape Reel  
Tape Reel  
TO-252  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R205-027.A  
5N50-P  
Power MOSFET  
MARKING  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 7  
QW-R205-027.A  
www.unisonic.com.tw  
5N50-P  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
500  
±30  
5
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
Continuous  
A
Drain Current  
Pulsed (Note 2)  
IDM  
20  
A
Avalanche Current (Note 2)  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
IAR  
5
A
EAS  
190  
7.3  
mJ  
mJ  
V/ns  
W
Avalanche Energy  
EAR  
Peak Diode Recovery dv/dt (Note 4)  
TO-220  
dv/dt  
4.5  
125  
TO-220F/TO-220F1  
TO-220F2  
Power Dissipation  
PD  
38  
W
TO-251/TO-252  
54  
W
°C  
°C  
Junction Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-55~+150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature  
3. L = 15.5mH, IAS = 5A, VDD = 50V, RG = 25, Starting TJ = 25°C  
4. ISD 5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
TO-220/TO-220F  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
TO-220F1/TO-220F2  
TO-251/TO-252  
TO-220  
Junction to Ambient  
Junction to Case  
θJA  
110  
1
°C/W  
°C/W  
TO-220F/TO-220F1  
TO-220F2  
θJC  
3.25  
2.13  
°C/W  
°C/W  
TO-251/TO-252  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 7  
QW-R205-027.A  
www.unisonic.com.tw  
5N50-P  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
BVDSS  
ID=250µA, VGS=0V  
500  
V
Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25°C, ID=250µA  
0.5  
V/°C  
VDS=500V, VGS=0V  
1
Drain-Source Leakage Current  
Gate- Source Leakage Current  
IDSS  
IGSS  
µA  
VDS=400V, TC=125°C  
VGS=30V, VDS=0V  
VGS=-30V, VDS=0V  
10  
Forward  
Reverse  
100 nA  
-100 nA  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=10V, ID=2.5A  
2.0  
4.0  
V
Static Drain-Source On-State Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
1.2 1.6  
CISS  
COSS  
CRSS  
580  
66  
pF  
pF  
pF  
VGS=0V, VDS=25V,  
Output Capacitance  
f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Turn-ON Delay Time  
Rise Time  
10  
tD(ON)  
tR  
tD(OFF)  
tF  
30  
80  
ns  
ns  
VDD=30V, ID=0.5A,  
RG=25(Note 1, 2)  
Turn-OFF Delay Time  
Fall-Time  
110  
90  
ns  
ns  
Total Gate Charge  
QG  
18  
2.2  
9.7  
24  
5
nC  
nC  
nC  
V
GS=10V, VDS=50V,  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
ID=1.3A, ID=100μA (Note 1, 2)  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Continuous Drain-Source Diode  
Forward Current  
IS  
A
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
20  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
VSD  
trr  
IS=5A, VGS=0V  
1.4  
V
263  
1.9  
ns  
µC  
IS=5A, VGS=0V,  
dIF/dt=100A/µs (Note 1)  
Reverse Recovery Charge  
QRR  
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 7  
QW-R205-027.A  
www.unisonic.com.tw  
5N50-P  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
VGS  
Same Type  
as DUT  
QG  
12V  
10V  
200nF  
VDS  
QGS  
QGD  
50k  
300nF  
VGS  
DUT  
3mA  
Charge  
Gate Charge Test Circuit  
Gate Charge Waveforms  
Resistive Switching Test Circuit  
Resistive Switching Waveforms  
1
2
BVDSS  
BVDSS-VDD  
VDS  
2
EAS  
=
LIAS  
BVDSS  
IAS  
RG  
ID  
L
10V  
ID(t)  
DUT  
tP  
VDD  
VDD  
V
DS(t)  
Time  
tP  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 7  
QW-R205-027.A  
www.unisonic.com.tw  
5N50-P  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS(Cont.)  
+
DUT  
VDS  
RG  
L
-
ISD  
VGS  
VDD  
Driver  
Same Type  
as DUT  
dv/dt controlled by RG  
ISD controlled by pulse period  
Peak Diode Recovery dv/dt Test Circuit & Waveforms  
Gate Pulse Width  
D=  
VGS  
Gate Pulse Period  
10V  
(Driver)  
I
FM, Body Diode Forward Current  
ISD  
di/dt  
(DUT)  
IRM  
Body Diode Reverse Current  
VDS  
(DUT)  
Body Diode Recovery dv/dt  
VSD  
VDD  
Body Diode Forward  
Voltage Drop  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 7  
QW-R205-027.A  
www.unisonic.com.tw  
5N50-P  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Continuous Drain-Source Diode Forward  
Current vs. Source to Drain Voltage  
7
Drain-Source On-State Resistance  
Characteristics  
3
2.5  
2
VGS=10V, ID=2.5A  
6
5
4
1.5  
1
3
5
0.5  
1
0
0
0
1
2
3
4
5
0.2  
0.4  
0.6  
0.8  
1.0  
0
Drain to Source Voltage, VDS (V)  
Source to Drain Voltage, VSD (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 7  
QW-R205-027.A  
www.unisonic.com.tw  
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