IXZR16N60 & IXZR16N60A/B
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
Symbolꢁ
TestꢁConditions
CharacteristicꢁValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
ꢀ
ꢀ
ꢀ
ꢀ
min.ꢁ
typ.ꢁ
max.ꢁ ꢀ
ꢀ ꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁ1ꢁ
2040ꢀ
RGꢀ
Cissꢀ
ꢁ
ꢀ
ꢀ
ꢀꢀ
pFꢀ
pFꢀ
ꢀ
ꢀ
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSS(max),ꢀꢀ
fꢀ=ꢀ1ꢀMHzꢀ
Coss
Crss
ꢀ
160ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
20ꢀ
33ꢀ
4ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
pFꢀ
pFꢀ
nsꢀ
nsꢀ
nsꢀ
nsꢀ
nCꢀ
nCꢀ
BackꢀMetalꢀtoꢀanyꢀPinꢀ
ꢀ
Cstray
Td(on)
Tonꢀ
ꢀ
ꢀ
VGSꢀ=ꢀ15ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSSꢀꢀꢀ
IDꢀ=ꢀ0.5ꢀIDMꢀꢀ
RGꢀ=ꢀ1ꢀꢀꢀ(External)ꢀꢀ
4ꢀ
Td(off)
Toffꢀ
ꢀ
4ꢀ
ꢀ
ꢀ
6ꢀ
Qg(on)
ꢀ
42ꢀ
13ꢀ
VGSꢀ=ꢀ10ꢀV,ꢀVDSꢀ=ꢀ0.5ꢀVDSSꢀꢀꢀ
IDꢀ=ꢀ0.5ꢀID25ꢀꢀIGꢀ=ꢀ3mAꢀ
Qgsꢀ
ꢀ
Qgdꢀ
ꢀ
18ꢀ
ꢀ
nCꢀ
SourceꢀDrainꢁDiode
CharacteristicꢁValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
Symbolꢁ
TestꢁConditionsꢀ
min.ꢁ
typ.ꢁ
max.ꢁ ꢀ
18ꢀ
VGSꢀ=ꢀ0ꢀV
ꢀ
ISꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Αꢀ
Repetitive;ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJM
ꢀ
ISM
ꢀ
108ꢀ
1.5ꢀ
Aꢀ
Vꢀ
IFꢀ=ꢀIs,ꢀVGS=0ꢀV,ꢀPulseꢀtest,ꢀtꢀ≤ꢀ300ꢂs,ꢀdutyꢀcycleꢀ
≤2%ꢀ
VSD
ꢀ
ꢀ
Trrꢀ
ꢀ
200ꢀ
ꢀ
nsꢀ
CAUTION:ꢀOperationꢀatꢀorꢀaboveꢀtheꢀMaximumꢀRatingsꢀvaluesꢀmayꢀimpactꢀdeviceꢀreliabilityꢀorꢀcauseꢀpermanentꢀdamageꢀtoꢀtheꢀdevice.ꢀ
ꢀ
Informationꢀinꢀthisꢀdocumentꢀisꢀbelievedꢀtoꢀbeꢀaccurateꢀandꢀreliable. IXYSRFꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀinformationꢀpubꢁ
lishedꢀinꢀthisꢀdocumentꢀatꢀanyꢀtimeꢀandꢀwithoutꢀnotice.ꢀ
IXYSꢀRFꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀlimits,ꢀtestꢀconditionsꢀandꢀdimensions.ꢀ
IXYSꢀRFꢀMOSFETSꢀareꢀcoveredꢀbyꢀoneꢀorꢀmoreꢀofꢀtheꢀfollowingꢀU.S.ꢀpatents:ꢀ
4,835,592ꢀ 4,860,072ꢀ 4,881,106ꢀ 4,891,686ꢀ 4,931,844ꢀ 5,017,508ꢀ
5,034,796ꢀ 5,049,961ꢀ 5,063,307ꢀ 5,187,117ꢀ 5,237,481ꢀ 5,486,715ꢀ
5,381,025ꢀ 5,640,045ꢀ 6,404,065ꢀ 6,583,505ꢀ 6,710,463ꢀ 6,727,585ꢀ
6,731,002ꢀ
