IXZ308N120
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode LSiwneitcahr 1M7o5dMeHRzFRMFOMSOFSEFTET
LowCCapaapcaictaitnacneceZ-ZM-MOOSTSMTMMMOOSFSEFTETPrPorcoecsesss
Optimized for LRiFneOapr eOrapteiorantion
Ideal for Class ACB, D&, C&,EBAropapdliccaastito&nsCommunications Applications
VDSS
ID25
= 1200 V
=
=
=
8.0 A
2.1 Ω
RDS(on)
PDC
Symbol
Test Conditions
Maximum Rat-
ings
880 W
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
1200
1200
V
V
VDSS
VDGR
±20
±30
8
V
V
VGS
VGSM
ID25
IDM
Transient
Tc = 25°C
A
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
40
A
8
A
IAR
Tc = 25°C
TBD
mJ
EAR
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS
Tj ≤ 150°C, RG = 0.2Ω
,
5 V/ns
dv/dt
IS = 0
>200 V/ns
DRAIN
880
440
3.0
W
W
W
PDC
GATE
Tc = 25°C, Derate 4.4W/°C above 25°C
Tc = 25°C
PDHS
PDAMB
RthJC
RthJHS
0.17 C/W
0.34 C/W
SG1 SG2
SD1
SD2
Features
• Isolated Substrate
−
−
−
high isolation voltage (>2500V)
min.
1200
3.5
typ.
max.
excellent thermal transfer
Increased temperature and power
cycling capability
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
V
V
VDSS
VGS(th)
IGSS
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
−
−
•
6.5
±100
nA
easier to drive
faster switching
Low RDS(on)
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
50
1
IDSS
µA
mA
• Very low insertion inductance (<2nH)
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
2.1
RDS(on)
Ω
• No beryllium oxide (BeO) or other
hazardous materials
VDS = 50 V, ID = 0.5ID25, pulse test
10.1
S
°C
°C
°C
°C
g
gfs
Advantages
-55
-55
+175
TJ
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
175
TJM
Tstg
TL
+ 175
1.6mm(0.063 in) from case for 10 s
300
3.5
Weight
