IXZ4DF18N50
RF Power MOSFET & DRIVER
500 Volts
19 A
0.29 Ohms
Driver / MOSFET Combination
DEIC-515 Driver combined with IXZ318N50 MOSFET
Gate driver matched to MOSFET
Features
•ꢀ Isolatedꢀsubstrateꢀ
−ꢀ highꢀisolationꢀvoltageꢀ(>2500V)ꢀ
−ꢀ excellentꢀthermalꢀtransferꢀ
−ꢀ Increasedꢀtemperatureꢀandꢀpowerꢀcyclingꢀcapabilityꢀꢀꢀ
•ꢀ IXYSꢀadvancedꢀZꢁMOSꢀprocessꢀ
•ꢀ LowꢀRds(ON)
ꢀ
•ꢀ Veryꢀlowꢀinsertionꢀinductance(<2nH)ꢀ
•ꢀ Noꢀberylliumꢀoxideꢀ(BeO)ꢀorꢀotherꢀhazardousꢀmaterialsꢀꢀ
•ꢀ BuiltꢀusingꢀtheꢀadvantagesꢀandꢀcompatibilityꢀofꢀCMOSꢀandꢀIXYSꢀ
HDMOS™ꢀprocessesꢀ
•ꢀ Latchꢁupꢀprotectedꢀ
•ꢀ Lowꢀquiescentꢀsupplyꢀcurrentꢀ
ꢀ
Applications
Advantages
•ꢀ ClassꢀDꢀorꢀEꢀSwitchingꢀ
Amplifierꢀ
•ꢀ MultiꢀMHzꢀSwitchꢀModeꢀ
PowerꢀSuppliesꢀ(SMPS)ꢀ
•ꢀ OptimizedꢀforꢀRFꢀandꢀhighꢀspeedꢀ
•ꢀ Easyꢀtoꢀmount—noꢀinsulatorsꢀneededꢀ
•ꢀ Highꢀpowerꢀdensityꢀ
•ꢀ Singleꢀpackageꢀreducesꢀsizeꢀandꢀheatꢀsinkꢀareaꢀ
Descriptionꢀ
TheꢀIXZ4DF18N50ꢀisꢀaꢀCMOSꢀhighꢀspeedꢀhighꢀcurrentꢀgateꢀdriverꢀandꢀZMOSꢀMOSFETꢀcombinationꢀ
specificallyꢀdesignedꢀClassꢀDꢀandꢀEꢀHFꢀRFꢀapplicationsꢀatꢀupꢀtoꢀ40MHz,ꢀasꢀwellꢀasꢀotherꢀapplications.ꢀTheꢀ
IXZ4DF18N50ꢀinꢀpulseꢀmodeꢀcanꢀprovideꢀ95Aꢀofꢀpeakꢀcurrentꢀwhileꢀproducingꢀvoltageꢀriseꢀandꢀfallꢀtimesꢀofꢀlessꢀ
thanꢀ4ns,ꢀandꢀminimumꢀpulseꢀwidthsꢀofꢀ8ns.ꢀTheꢀinputꢀofꢀtheꢀdriverꢀꢀisꢀfullyꢀimmuneꢀtoꢀlatchꢀupꢀoverꢀtheꢀentireꢀ
operatingꢀrange.ꢀDesignedꢀwithꢀsmallꢀinternalꢀdelays,ꢀtheꢀIXZ4DF18N50ꢀisꢀsuitableꢀforꢀhigherꢀpowerꢀoperationꢀ
whereꢀcombinersꢀareꢀused.ꢀItsꢀfeaturesꢀandꢀꢀwideꢀsafetyꢀmarginꢀinꢀoperatingꢀvoltageꢀandꢀpowerꢀmakeꢀtheꢀ
IXZ4DF18N50ꢀunmatchedꢀinꢀperformanceꢀandꢀvalue.ꢀ
TheꢀIXZ4DF18N50ꢀisꢀpackagedꢀinꢀDEI'sꢀlowꢀinductanceꢀRFꢀpackageꢀincorporatingꢀDEI'sꢀRFꢀlayoutꢀtechniquesꢀ
toꢀminimizeꢀstrayꢀleadꢀinductancesꢀforꢀoptimumꢀswitchingꢀperformance.ꢀTheꢀIXZ4DF18N50ꢀisꢀaꢀsurfaceꢁ
mountableꢀdevice.ꢀꢀ
Figure 1.
Functional Diagram
