IXSH 30N60
IXSM 30N60
IXSH 30N60A IXSM 30N60A
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
7
13
S
A
IC(on)
VGE = 15 V, VCE = 10 V
100
Cies
Coes
Cres
2760
240
51
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
110
34
150 nC
45 nC
63 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
47
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
td(on)
tri
td(off)
tfi
60
130
400
ns
ns
ns
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 4.7 Ω
30N60
400
200
ns
ns
Remarks: Switching times
may increase for
30N60A
VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
,
Eoff
30N60
30N60A
5.0
2.5
mJ
mJ
td(on)
tri
60
130
1.0
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
L = 100 µH
Eon
td(off)
mJ
30N60
30N60A
540 1000 ns
340 525 ns
VCE = 0.8 VCES
,
RG = 4.7 Ω
TO-204AE Outline
Remarks: Switching times
may increase for
tfi
30N60
30N60A
600 1500 ns
340
700 ns
VCE (Clamp) > 0.8 VCES
,
higher TJ or increased RG
Eoff
30N60
30N60A
12
6
mJ
mJ
RthJC
RthCK
0.63 K/W
K/W
0.25
IXSH 30N60 and IXSH 30N60A characteristic curves are located on the
IXSH 30N60U1 and IXSH 30N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
