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IXSK50N60AU1

型号：

IXSK50N60AU1

描述：

IGBT与二极管[ IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

99 K

下载PDF手册
IGBT with Diode  
IXSK 50N60AU1 VCES  
= 600 V  
= 75 A  
IC25  
Combi Pack  
VCE(sat) = 2.7 V  
Short Circuit SOA Capability  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C, limited by leads  
TC = 90°C  
75  
50  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 25°C, 1 ms  
200  
Features  
SSOA  
V
GE= 15 V, TVJ = 125°C, RG = 22 Ω  
ICM = 100  
A
(RBSOA)  
Clamped inductive load, L = 30 µH  
@ 0.8 VCES  
●
International standard package  
JEDEC TO-264 AA  
Guaranteed Short Circuit SOA  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 22 Ω, non repetitive  
10  
µs  
W
●
●
capability  
PC  
TC = 25°C  
300  
High frequency IGBT and anti-  
parallel FRED in one package  
2nd generation HDMOSTM process  
Low VCE(sat)  
- for minimum on-state conduction  
losses  
MOS Gate turn-on  
- drive simplicity  
Fast RecoveryEpitaxial Diode  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
●
●
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque  
0.9/6 Nm/lb.in.  
●
●
Weight  
10  
g
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
(FRED)  
- soft recovery with low IRM  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
●
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
●
●
●
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
600  
4
V
V
●
7
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
750 µA  
15 mA  
Advantages  
●
Space savings (two devices in one  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
package)  
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Reduces assembly time and cost  
●
VCE(sat)  
IC = IC90, VGE = 15 V  
2.7  
V
●
IXYS reserves the right to change limits, test conditions and dimensions.  
© IXYS Corporation. All rights reserved.  
92822G (4/96)  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSK 50N60AU1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 AA Outline  
IC = IC90; VCE = 10 V,  
20  
23  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Qg  
190  
45  
250 nC  
60 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
88  
120 nC  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
70  
220  
200  
400  
6
ns  
ns  
IC = IC90, VGE = 15 V, L = 100 µH,  
VCE = 0.8 VCES, RG = 2.7 Ω  
ns  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
600 ns  
mJ  
Eoff  
td(on)  
tri  
70  
230  
4.5  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = 2.7 Ω  
Eon  
td(off)  
tfi  
mJ  
ns  
340  
400  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
Eoff  
7
mJ  
RthJC  
RthCK  
0.42 K/W  
K/W  
0.15  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
1.8  
33  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 480 A/µs  
VR = 360 V  
19  
175  
35  
A
ns  
TJ =125°C  
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C  
50 ns  
RthJC  
0.75 K/W  
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSK 50N60AU1  
Fig. 1 Saturation Characteristics  
Fig. 2  
Output Characterstics  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
13V  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
VGE = 15V  
11V  
13V  
11V  
7V  
60  
9V  
7V  
40  
9V  
20  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4  
Temperature Dependence  
of Output Saturation Voltage  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
10  
9
8
7
6
5
4
3
2
1
0
TJ = 25°C  
VGE=15V  
IC = 80A  
IC = 80A  
IC = 40A  
IC = 20A  
I
C = 40A  
IC = 20A  
8
9
10  
11  
12  
13  
14  
15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VCE = 10V  
BVCES  
IC = 3mA  
TJ = 25°C  
TJ = 125°C  
VGE8th)  
TJ = - 40°C  
IC = 4mA  
4
5
6
7
8
9
10 11 12 13  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© IXYS Corporation. All rights reserved.  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSK 50N60AU1  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
1000  
750  
500  
250  
0
12  
9
1000  
800  
600  
400  
200  
0
10  
8
TJ = 125°C  
IC = 50A  
TJ = 125°C  
RG = 10Ω  
Eoff  
Eoff  
6
6
tfi  
4
tfi  
3
2
0
0
0
10 20 30 40 50 60 70 80  
0
10  
20  
30  
40  
50  
IC - Amperes  
RG - Ohms  
Fig.9 Gate Charge Characteristic Curve  
Fig.10  
Turn-Off Safe Operating Area  
15  
12  
9
1000  
100  
10  
IC = 50A  
V
CE = 480V  
TJ = 125°C  
G = 22Ω  
dV/dt < 6V/ns  
R
6
1
3
0.1  
0.01  
0
0
50  
100  
150  
200  
250  
0
100 200 300 400 500 600 700  
VCE - Volts  
Qg - nCoulombs  
Fig.11 Transient Thermal Impedance  
1
0.1  
Diode  
IGBT  
Single Pulse  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Time - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSK 50N60AU1  
Fig.12 Typical Forward Voltage Drop  
Fig.13  
Peak Forward Voltage VFR and  
Forward Recovery Time tfr  
180  
160  
140  
120  
100  
80  
20  
16  
12  
8
1000  
TJ = 125°C  
IF = 60A  
VFR  
800  
600  
400  
200  
0
TJ = 100°C  
TJ = 150°C  
60  
40  
4
TJ = 25°C  
tfr  
20  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
0
200  
400  
600  
800  
1000 1200  
Voltage Drop - Volts  
diF /dt - A/µs  
Fig.14 Junction Temperature Dependence  
off IRM and Qr  
Fig.15  
Reverse Recovery Chargee  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
5
4
3
2
1
0
TJ = 100°C  
V
R = 350V  
IF = 60A  
IRM  
Qr  
0
40  
80  
120  
160  
1
10  
100  
1000  
TJ - Degrees C  
diF /dt - A/µs  
Fig.16 Peak Reverse Recovery Current  
Fig.17  
Reverse Recovery Time  
80  
60  
40  
20  
0
800  
600  
400  
200  
0
TJ = 100°C  
R = 350V  
IF = 60A  
TJ = 100°C  
V
VR = 350V  
IF = 60A  
max  
200  
400  
600  
800  
1000  
0
200  
400  
600  
diF /dt - A/µs  
diF /dt - A/µs  
©
IXYSCorporation  
IXYSSemiconductorGmbH  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
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