IXSH15N120A
Symbol
Test Conditions
Characteristic Values
TO-247AD (IXSH)
(TJ = 25°C unless otherwise specified)
Min
Typ.
Max.
gfs
IC = IC90, VCE = 10 V,
6
7
S
A
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
65
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
1800
160
45
pF
pF
pF
Qg
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
75
20
35
nC
nC
nC
Qge
Qgc
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 82 Ω, VCLAMP = 0.8 VCES
Note 1
100
200
450
600
5.4
ns
ns
ns
ns
Eoff
mJ
td(on)
tri
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 82 Ω
100
200
1.1
ns
ns
E(on)
mJ
td(off)
tfi
VCLAMP = 0.8 VCES
Note 1
650
900
ns
ns
Eoff
14.5
mJ
RthJC
RthCK
0.83K/W
K/W
0.25
Notes:
1.) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ
or RG values.
2.) Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Data contained herein reflects measurements and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
