IXSH10N120AU1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
TO-247AD (IXSH)
gfs
IC = IC90, VCE = 10 V,
4
S
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
37
A
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
800
53
pF
pF
pF
15
Qg
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
40
12
20
nC
nC
nC
Qge
Qgc
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300µH
RG = 120 Ω, VCLAMP = 0.8 VCES
Note 1
100
200
250
620
750
2.5
ns
ns
ns
ns
ns
mJ
tc
Eoff
td(on)
tri
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300µH
RG = 120 Ω
100
200
ns
ns
E(on)
TBD
mJ
td(off)
tfi
VCLAMP = 0.8 VCES
Note 1
300
1100
1200
4.0
ns
ns
tc
ns
Eoff
mJ
RthJC
RthCK
1.25 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25ºC unless otherwise specified)
Min.
Typ.
Max.
VF
IF = IC90, VGE = 0V
2.6
V
Pulse test, t< 300 µs, duty cycle < 2% TJ = 125ºC
IF = 1A; di/dt = -50A/µs; VR = 30V; TJ = 25ºC
IF = IC90, VGE = 0V, -diF/dt = 100 A/µs
TJ = 100ºC, VR = 540V
2.3
70
trr
50
ns
A
IRM
trr
6.5 7.2
300
ns
RthJC
2.0 K/W
Notes:
1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher T or Rg values.
2. Device must be heatsunk for high temperature leakage current meJasurements to
avoid thermal runaway.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSCorporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
