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IXTP5N50P

型号：

IXTP5N50P

描述：

PolarHV功率MOSFET - N沟道增强模式[ PolarHV Power MOSFET - N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

101 K

下载PDF手册
Advance Technical Information  
PolarHVTM  
Power MOSFET  
VDSS = 500 V  
ID25 = 4.8 A  
RDS(on) ≤ 1.4 Ω  
IXTA 5N50P  
IXTP 5N50P  
IXTY 5N50P  
N-Channel Enhancement Mode  
Symbol  
TestConditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
(TAB)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
4.8  
10  
A
A
TO-220 (IXTP)  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
5
20  
250  
A
mJ  
mJ  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 20 Ω  
,
10  
V/ns  
(TAB)  
G
D
S
TC = 25°C  
89  
W
TO-252 (IXTY)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
TL  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering  
TO-263 package for 10s  
300  
260  
°C  
°C  
S
(TAB)  
Md  
Mounting torque  
(TO-220)  
1.13/10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
TO-252  
4
3
0.8  
g
g
g
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Features  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 50μA  
VGS = 30 VDC, VDS = 0  
500  
V
V
3.0  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
50  
μA  
μA  
Advantages  
TJ = 125°C  
z
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
1.4  
Ω
z
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
z
DS99446(08/05)  
© 2005 IXYS All rights reserved  
IXTA 5N50P IXTP 5N50P  
IXTY 5N50P  
TO-263 (IXTA) Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
3.0  
4.7  
S
Ciss  
Coss  
Crss  
620  
72  
pF  
pF  
pF  
6.3  
td(on)  
tr  
td(off)  
tf  
18  
18  
45  
16  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 20 Ω (External)  
Pins: 1 - Gate 2,4 - Drain  
3 - Source  
Qg(on)  
Qgs  
12.6  
4.3  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
5.0  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCK  
1.4 K/W  
K/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
(TO-220)  
0.25  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
Characteristic Values  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
R
0.46  
0.74  
.018  
.029  
VGS = 0 V  
5
A
A
ISM  
Repetitive  
15  
TO-220 (IXTP) Outline  
VSD  
trr  
IF = IS, VGS = 0 V, -di/dt = 100 A/μs  
1.5  
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
400  
ns  
TO-252 (IXTY) Outline  
Dim. Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
2.19  
0.89  
2.38  
1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.64  
0.13  
0.89  
0
0.005  
0.035  
0.025  
b1  
b2  
0.76  
5.21  
1.14  
5.46  
0.030  
0.205  
0.045  
0.215  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
c
c1  
0.46  
0.46  
0.58  
0.58  
0.018  
0.018  
0.023  
0.023  
D
D1  
5.97  
4.32  
6.22  
5.21  
0.235  
0.170  
0.245  
0.205  
E
E1  
6.35  
4.32  
6.73  
5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28BSC  
4.57BSC  
0.090BSC  
0.180BSC  
H
L
9.40 10.42  
0.370  
0.020  
0.410  
0.040  
0.51  
1.02  
L1  
L2  
L3  
0.64  
0.89  
2.54  
1.02  
1.27  
2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTA 5N50P IXTP 5N50P  
IXTY 5N50P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
5
4
3
2
1
0
10  
9
8
7
6
5
4
3
2
1
0
V = 10V  
GS  
V
GS  
10V  
7V  
=
7V  
6V  
5V  
6V  
5V  
0
1
2
3
4
5
6
7
8
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
5
4
3
2
1
0
3.2  
2.8  
2.4  
2
V
GS  
= 10V  
7V  
V
GS  
= 10V  
6V  
5V  
I
= 5A  
D
1.6  
1.2  
0.8  
0.4  
I
= 2.5A  
D
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
3.4  
3
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
V
GS  
= 10V  
T = 125  
º
C
J
2.6  
2.2  
1.8  
1.4  
1
T = 25 C  
º
J
0.6  
0
1
2
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXTA 5N50P IXTP 5N50P  
IXTY 5N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TJ = -40  
25  
125  
º
C
º
C
º
C
T = 125  
J
º
C
C
C
25  
º
º
-40  
0
1
2
3
4
5
6
7
4
4.5  
5
5.5  
6
6.5  
7
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
15  
12  
9
V
= 250V  
DS  
I
I
= 2.5A  
D
G
= 10mA  
T = 125 C  
º
J
6
º
T = 25 C  
J
3
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
2
4
6
8
10  
12  
14  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100  
10000  
f = 1MHz  
T = 150  
J
º
C
T
= 25 C  
º
C
C
iss  
R
Limit  
DS(on)  
1000  
100  
10  
10  
25µs  
C
oss  
10 0 µ s  
1m s  
1
C
rss  
DC  
10 m s  
1
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTA 5N50P IXTP 5N50P  
IXTY 5N50P  
Fig. 13. Maximum Transient Thermal Resistance  
10.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2005 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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IXYS

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IXYS

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IXYS

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IXYS

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LITTELFUSE

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IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

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