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IXTA05N100

型号：

IXTA05N100

描述：

高电压的MOSFET[ High Voltage MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

537 K

下载PDF手册
IXTA 05N100  
IXTP 05N100  
VDSS  
ID25  
= 1000 V  
= 750 mA  
High Voltage MOSFET  
N-ChannelEnhancementMode  
RDS(on) = 17 Ω  
AvalancheEnergyRated  
Symbol  
TestConditions  
Maximum Ratings  
TO-220AB(IXTP)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
1000  
1000  
V
V
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
B)  
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
750  
3
mA  
A
TO-263AA(IXTA)  
IAR  
1.0  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
5
100  
mJ  
mJ  
G
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 47 Ω  
3
V/ns  
S
D (TAB)  
PD  
TC = 25°C  
40  
W
G = Gate,  
D = Drain,  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source,  
TAB = Drain  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Features  
Weight  
4
g
yInternational standard packages  
yHigh voltage, Low RDS (on) HDMOSTM  
process  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
yRugged polysilicon gate cell structure  
yFast switching times  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
y Switch-mode and resonant-mode  
power supplies  
y Flyback inverters  
y DC choppers  
y High frequency matching  
VDSS  
VGS(th)  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 25 µA  
1000  
2.5  
V
V
4.5  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100 nA  
VDS = VDSS  
VGS = 0 V  
T = 25°C  
25 µA  
TJJ = 125°C  
500 µA  
Advantages  
y Space savings  
y High power density  
RDS(on)  
V
= 10 V, ID = 375 mA  
15  
17  
Ω
PGuSlse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
© 2004 IXYS All rights reserved  
DS98736B(10/04)  
IXTA 05N100  
IXTP 05N100  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-220 AB Dimensions  
VDS = 20 V; ID = 500 mA, pulse test  
0.5 0.85  
S
Ciss  
Coss  
Crss  
240  
22  
4
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
11  
19  
40  
28  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A  
RG = 47Ω, (External)  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
Qg(on)  
Qgs  
Qgd  
10.5  
2.5  
5.0  
nC  
nC  
nC  
4 - Drain  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A  
Bottom Side  
RthJC  
RthCK  
3.1 K/W  
K/W  
(IXTP)  
0.50  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
VGS = 0 V  
IS  
750 mA  
ISM  
VSD  
Repetitive; pulse width limited by TJM  
3
2
A
V
TO-263AAOutline  
IF = I , VGS = 0 V,  
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
710  
ns  
1. Gate  
2. Drain  
3. Source  
4. Drain  
BottomSide  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTA 05N100  
IXTP 05N100  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
@ 25 C  
º
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
GS  
= 10V  
7V  
6V  
V
GS  
= 10V  
8V  
7V  
6V  
5.5V  
5.5V  
5V  
5V  
4.5V  
0
2
4
6
8
10  
12  
14  
0
5
10  
15  
20  
25  
30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Normalized RDS(on) vs.  
Junction Temperature  
º
C
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
3
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
V
GS  
= 10V  
V
= 10V  
GS  
7V  
6V  
5.5V  
5V  
I = 750mA  
D
I
= 375mA  
D
0.8  
0.6  
0.4  
4.5V  
20  
-50  
-25  
0
25  
50  
75  
100 125 150  
0
5
10  
15  
25  
30  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. Normalized RDS(on) vs. ID  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100 125 150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
I D - Amperes  
TC - Degrees Centigrade  
IXTA 05N100  
IXTP 05N100  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
3.5  
0.4  
0
4.0  
4.5  
5.0  
5.5  
6.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 500V  
DS  
I
I
= 1A  
D
G
= 1mA  
T = 125ºC  
J
T = 25ºC  
J
0.5  
0.6  
0.7  
0.8  
0.9  
0
1
2
3
4
5
6
7
8
9
10 11  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
1000  
100  
10  
10.0  
f = 1MHz  
C
iss  
1.0  
C
oss  
C
rss  
30  
1
0.1  
5
10  
15  
20  
25  
35  
40  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
厂商 型号 描述 页数 下载

IXYS

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LITTELFUSE

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IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

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LITTELFUSE

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