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IXTH12N100

型号：

IXTH12N100

描述：

MegaMOS FET[ MegaMOS FET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

109 K

下载PDF手册
MegaMOSTMFET  
VDSS  
ID25  
RDS(on)  
IXTH / IXTM 10N100  
IXTH / IXTM 12N100  
1000V 10 A 1.20 Ω  
1000V 12 A 1.05 Ω  
N-ChannelEnhancementMode  
Symbol  
Test Conditions  
MaximumRatings  
TO-247 AD (IXTH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
D(TAB)  
VGSM  
ID25  
TC = 25°C  
10N100  
12N100  
10  
12  
A
A
TO-204 AA (IXTM)  
IDM  
TC = 25°C, pulse width limited by TJM  
10N100  
12N100  
40  
48  
A
A
PD  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G
TJM  
Tstg  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
TO-204 = 18 g, TO-247 = 6 g  
300 °C  
Weight  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
Features  
Internationalstandardpackages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Low package inductance (< 5 nH)  
- easy to drive and to protect  
Fast switching times  
Symbol  
Test Conditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
Switch-modeandresonant-mode  
powersupplies  
Motorcontrols  
UninterruptiblePowerSupplies(UPS)  
DC choppers  
VDSS  
VGS = 0 V, ID = 3 mA  
1000  
2
V
V
VGS(th)  
VDS = VGS, ID = 250 µA  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
250 µA  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
Advantages  
1
mA  
Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
10N100  
12N100  
1.20  
1.05  
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
Highpowerdensity  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91540E(5/96)  
1 - 4  
IXTH10N100 IXTH12N100  
IXTM10N100 IXTM12N100  
Symbol  
gfs  
Test Conditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
TO-247 AD (IXTH) Outline  
min. typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
6
12  
S
Ciss  
Coss  
Crss  
4000  
310  
70  
pF  
pF  
pF  
1
2
3
td(on)  
tr  
td(off)  
tf  
21  
33  
50  
50  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
RG = 2 Ω, (External)  
62 100  
32 50  
3 - Source  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Qg(on)  
Qgs  
150 170  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25  
30  
55  
45  
80  
Qgd  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCK  
0.42 K/W  
K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
0.25  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Symbol  
IS  
Test Conditions  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VGS = 0 V  
10N100  
12N100  
10  
12  
A
A
ISM  
VSD  
trr  
Repetitive;  
pulse width limited by TJM  
10N100  
12N100  
40  
48  
A
A
TO-204AA (IXTM) Outline  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
1.5  
V
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
1000  
ns  
Pins  
1 - Gate  
2 - Source  
Case - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
6.4  
11.4  
3.42  
1.09  
.250 .450  
.135  
.038 .043  
b
.97  
D
22.22  
.875  
e
e1  
10.67 11.17  
.420 .440  
.205 .225  
5.21  
5.71  
L
7.93  
3.84  
p1 3.84  
.312  
p
4.19  
4.19  
.151 .165  
.151 .165  
q
30.15 BSC  
1.187 BSC  
R
R1  
13.33  
4.77  
.525  
.188  
s
16.64 17.14  
.655 .675  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXTH10N100 IXTH12N100  
IXTM10N100 IXTM12N100  
Fig. 1 OutputCharacteristics  
Fig. 2 InputAdmittance  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
TJ = 25°C  
V
GS = 10V  
7V  
6V  
TJ = 25°C  
6
6
5V  
4
4
2
2
0
0
0
5
10  
15  
20  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig. 3 RDS(on) vs. Drain Current  
Fig. 4 TemperatureDependence  
of Drain to Source Resistance  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
TJ = 25°C  
VGS = 10V  
ID = 6A  
VGS = 15V  
0
5
10  
15  
20  
25  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
ID - Amperes  
Fig. 5 Drain Current vs.  
CaseTemperature  
Fig. 6 TemperatureDependenceof  
BreakdownandThresholdVoltage  
20  
18  
16  
14  
12  
10  
8
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS(th)  
BVDSS  
12N100  
10N100  
6
4
2
0
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 2000 IXYS All rights reserved  
3 - 4  
IXTH10N100 IXTH12N100  
IXTM10N100 IXTM12N100  
Fig.7 Gate Charge Characteristic Curve  
Fig.8 Forward Bias Safe Operating Area  
10  
9
8
7
6
5
4
3
2
1
0
10µs  
VDS = 500V  
ID = 6A  
IG = 10mA  
Limited by RDS(on)  
100µs  
1ms  
10  
1
10ms  
100ms  
0.1  
0
25  
50  
75  
100  
125  
150  
1
10  
100  
VDS - Volts  
1000  
Gate Charge - nCoulombs  
Fig.9 CapacitanceCurves  
Fig.10 Source Current vs. Source  
to Drain Voltage  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
20  
18  
16  
14  
12  
10  
8
Ciss  
f = 1MHz  
VDS = 25V  
TJ = 125°C  
6
TJ = 25°C  
4
Coss  
Crss  
2
0
0
0
5
10  
15  
20  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4  
VDS - Volts  
VSD - Volts  
Fig.11 TransientThermalImpedance  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
0.01  
Single Pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Time - Seconds  
© 2000 IXYS All rights reserved  
4 - 4  
厂商 型号 描述 页数 下载

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IXYS

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LITTELFUSE

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IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

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