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2SK3019_2

型号:

2SK3019_2

描述:

2.5V驱动N沟道MOS FET[ 2.5V Drive Nch MOS FET ]

品牌:

ROHM[ ROHM ]

页数:

4 页

PDF大小:

69 K

2SK3019  
Transistor  
2.5V Drive Nch MOS FET  
2SK3019  
zDimensions (Unit : mm)  
zStructure  
Silicon N-channel  
MOSFET  
EMT3  
0.7  
1.6  
0.3  
0.55  
( )  
3
zApplications  
( )  
2
( )  
1
Interfacing, switching (30V, 100mA)  
0.2  
0.2  
0.15  
0.5 0.5  
1.0  
(1)Source  
(2)Gate  
zFeatures  
1) Low on-resistance.  
(3)Drain  
Abbreviated symbol : KN  
2) Fast switching speed.  
3) Low voltage drive (2.5V) makes this device ideal for  
portable equipment.  
4) Drive circuits can be simple.  
5) Parallel use is easy.  
zPackaging specifications  
zEquivalent circuit  
Package  
Code  
Taping  
TL  
Drain  
Type  
Basic ordering unit  
(pieces)  
3000  
2SK3019  
Gate  
zAbsolute maximum ratings (Ta=25°C)  
Gate  
Protection  
Diode  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
30  
Unit  
V
Source  
VDSS  
GSS  
V
20  
V
A protection diode is included between the gate  
and the source terminals to protect the diode  
against static electricity when the product is in use.  
Use a protection circuit when the fixed voltages  
are exceeded.  
Continuous  
Pulsed  
I
D
100  
mA  
mA  
mW  
°C  
Drain current  
1
I
DP  
400  
2
Total power dissipation  
Channel temperature  
P
D
150  
Tch  
150  
Storage temperature  
Tstg  
55 to +150  
°C  
1 Pw10µs, Duty cycle1%  
2 With each pin mounted on the recommended lands.  
zThermal resistance  
Parameter  
Channel to ambient  
Symbol  
Rth(ch-a) ∗  
Limits  
833  
Unit  
°C / W  
With each pin mounted on the recommended lands.  
Rev.C  
1/3  
2SK3019  
Transistor  
zElectrical characteristics (Ta=25°C)  
Symbol Min.  
Typ.  
Max.  
1
Unit  
µA  
V
Conditions  
VGS= 20V, VDS=0V  
Parameter  
I
GSS  
(BR)DSS  
DSS  
30  
Gate-source leakage  
V
I
D=10µA, VGS=0V  
Drain-source breakdown voltage  
I
1.0  
1.5  
8
µA  
V
V
V
DS=30V, VGS=0V  
Zero gate voltage drain curren  
t
V
GS(th)  
DS(on)  
DS(on)  
0.8  
DS=3V, I =100µA  
D
Gate threshold voltage  
R
R
5
I
I
I
D
D
D
=10mA, VGS=4V  
=1mA, VGS=2.5V  
=10mA, VDS=3V  
DS=5V  
Static drain-source on-state  
resistance  
7
13  
|Yfs  
|
20  
ms  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C
iss  
oss  
rss  
d(on)  
13  
9
V
V
C
GS=0V  
C
4
f=1MHz  
t
15  
35  
80  
80  
I
D=10mA, VDD 5V  
t
r
VGS=5V  
t
d(off)  
Turn-off delay time  
Fall time  
RL=500Ω  
t
f
RG  
=10Ω  
zElectrical characteristic curves  
0.15  
200m  
2
1.5  
1
V
DS=3V  
V
DS=3V  
4V  
3V  
100m  
50m  
I
D
=0.1mA  
Pulsed  
Ta=25°C  
Pulsed  
Pulsed  
3.5V  
20m  
10m  
5m  
0.1  
0.05  
0
2.5V  
2V  
2m  
1m  
Ta=125°C  
75°C  
25°C  
25°C  
0.5  
0
0.5m  
0.2m  
0.1m  
V
2
GS=1.5V  
0
1
3
4
5
50 25  
0
25  
50  
75 100 125 150  
3
0
1
2
4
DRAIN-SOURCE VOLTAGE : VDS (V)  
CHANNEL TEMPERATURE : Tch (°C)  
GATE-SOURCE VOLTAGE : VGS (V)  
Fig.1 Typical output characteristics  
Fig.2 Typical transfer characteristics  
Fig.3 Gate threshold voltage vs.  
channel temperature  
50  
50  
15  
V
GS=4V  
Ta=25°C  
Pulsed  
V
GS=2.5V  
Pulsed  
Pulsed  
Ta=125°C  
75°C  
Ta=125°C  
75°C  
20  
10  
5
20  
10  
5
25°C  
25°C  
25°C  
10  
5
25°C  
2
2
I
D=0.1A  
1
1
I
D=0.05A  
0.5  
0.001 0.002  
0.5  
0.001 0.002  
0
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
0
5
10  
15  
20  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
DRAIN CURRENT : I  
D
(A)  
GATE-SOURCE VOLTAGE : VGS (V)  
DRAIN CURRENT : ID (A)  
Fig.4 Static drain-source on-state  
resistance vs. drain current (Ι)  
Fig.6 Static drain-source  
on-state resistance vs.  
gate-source voltage  
Fig.5 Static drain-source on-state  
resistance vs. drain current (ΙΙ)  
Rev.C  
2/3  
2SK3019  
Transistor  
9
8
7
0.5  
0.2  
200m  
V
GS=4V  
V
DS=3V  
V
GS=0V  
Pulsed  
Pulsed  
Pulsed  
100m  
50m  
Ta=−25°C  
25°C  
I
D
=100mA  
0.1  
20m  
75°C  
6
5
4
3
2
1
Ta=125°C  
0.05  
125°C  
10m  
5m  
ID=50mA  
75°C  
25°C  
25°C  
0.02  
0.01  
2m  
1m  
0.005  
0.5m  
0.002  
0.001  
0.2m  
0.1m  
0
50 25  
0
25  
50  
75 100 125 150  
0.0001 0.0002  
0.0005 0.001  
0.002  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
0
0.5  
1
1.5  
CHANNEL TEMPERATURE : Tch (°C)  
DRAIN CURRENT : ID (A)  
SOURCE-DRAIN VOLTAGE : VSD (V)  
Fig.7 Static drain-source on-state  
resistance vs. channel  
temperature  
Fig.8 Forward transfer  
Fig.9 Reverse drain current vs.  
admittance vs. drain current  
source-drain voltage (Ι)  
200m  
50  
1000  
500  
Ta=25°C  
Ta=25°C  
Pulsed  
Ta=25°C  
t
f
V
DD=5V  
GS=5V  
f=1MH  
Z
100m  
50m  
V
V
GS=0V  
t
d(off)  
20  
10  
5
RG=10Ω  
Pulsed  
200  
100  
Ciss  
20m  
10m  
5m  
V
GS=4V  
0V  
50  
Coss  
t
r
2m  
1m  
20  
10  
5
t
d(on)  
Crss  
2
0.5m  
1
0.2m  
0.1m  
0.5  
0.1 0.2  
2
0.5  
1
2
5
10  
20  
50  
0.1 0.2  
0.5  
1
2
5
10 20 50  
100  
0
0.5  
1
1.5  
DRAIN-SOURCE VOLTAGE : VDS (V)  
DRAIN CURRENT : ID (mA)  
SOURCE-DRAIN VOLTAGE : VSD (V)  
Fig.11 Typical capacitance vs.  
drain-source voltage  
Fig.12 Switching characteristics  
Fig.10 Reverse drain current vs.  
(See Figures 13 and 14 for  
the measurement circuit  
and resultant waveforms)  
source-drain voltage (ΙΙ)  
zSwitching characteristics measurement circuit  
Pulse width  
90%  
50%  
10%  
50%  
V
GS  
V
V
GS  
DS  
I
D
VDS  
RL  
D.U.T.  
10%  
RG  
10%  
90%  
VDD  
90%  
t
d (on)  
tr  
t
f
t
d (off)  
t
off  
t
on  
Fig.13 Switching time measurement circuit  
Fig.14 Switching time waveforms  
Rev.C  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
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ETC

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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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